Transistoren - FETs, MOSFETs - Arrays
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Arrays
Datensätze 3.829
Seite 71/128
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | FET-Funktion | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Eingangskapazität (Ciss) (Max) @ Vds | Leistung - max | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP |
6.966 |
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- | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 2P-CH 10.6V 8DIP |
8.964 |
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- | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP |
5.760 |
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EPAD®, Zero Threshold™ | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16DIP |
5.058 |
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EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16DIP |
6.066 |
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EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 780mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP |
2.448 |
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EPAD® | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Sanken |
MOSFET 6N-CH 60V 7A 15-SIP |
6.408 |
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- | 6 N-Channel (3-Phase Bridge) | Standard | 60V | 7A | 100mOhm @ 3.5A, 10V | 2V @ 250µA | - | 660pF @ 10V | 5W | 150°C (TJ) | Through Hole | 15-SIP | 15-SIP |
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Microchip Technology |
MOSFET 6N/6P-CH 200V 56VQFN |
3.042 |
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- | 6 N and 6 P-Channel | Standard | 200V | - | 8Ohm @ 1A, 10V | 2.4V @ 1mA | - | 50pF @ 25V | - | -55°C ~ 150°C (TJ) | Surface Mount | 56-VFQFN Exposed Pad | 56-QFN (8x8) |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10V 8DIP |
2.502 |
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EPAD® | 2 N-Channel (Dual) Matched Pair | Standard | 10V | - | 500Ohm @ 5V | 1.01V @ 1µA | - | 2.5pF @ 5V | 600mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10V 8SOIC |
3.978 |
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EPAD® | 2 N-Channel (Dual) Matched Pair | Standard | 10V | - | 500Ohm @ 5V | 1.01V @ 1µA | - | 2.5pF @ 5V | 600mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
5.130 |
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EPAD® | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16DIP |
4.482 |
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EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16DIP |
3.562 |
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EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16DIP |
2.520 |
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EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 780mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP |
2.790 |
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- | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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IXYS |
MOSFET 2N-CH 100V 100A I5-PAK |
7.812 |
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Trench™ | 2 N-Channel (Dual) | Standard | 100V | 100A | 7.4mOhm @ 50A, 10V | 4.5V @ 250µA | 151nC @ 10V | 6900pF @ 25V | 150W | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUSi5-Pak™ | ISOPLUSi5-Pak™ |
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IXYS |
MOSFET N/P-CH 100V 62A/54A I4PAC |
5.040 |
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Trench™ | N and P-Channel | Standard | 100V | 62A, 54A | 11mOhm @ 25A, 10V | 4.5V @ 250µA | 104nC @ 10V | 5080pF @ 25V | 89W, 132W | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ |
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IXYS |
MOSFET N/P-CH |
4.086 |
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- | N and P-Channel, Common Drain | Standard | 100V | 54A (Tc), 62A (Tc) | 24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V | 4V @ 250µA, 4.5V @ 250µA | 197nC @ 10V, 104nC @ 10V | 1370pF @ 25V, 5080pF @ 25V | 89W, 132W | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUSi5-Pak™ | ISOPLUS i4-PAC™ |
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IXYS |
MOSFET 2N-CH 250V 30A I4-PAC |
8.406 |
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HiPerFET™ | 2 N-Channel (Dual) | Standard | 250V | 30A | 50mOhm @ 25A, 10V | 4.5V @ 250µA | 78nC @ 10V | 4000pF @ 25V | 125W | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ |
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IXYS |
MOSFET 2N-CH 200V 33A I4-PAC |
7.236 |
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HiPerFET™ | 2 N-Channel (Dual) | Standard | 200V | 33A | 40mOhm @ 30A, 10V | 4.5V @ 250µA | 90nC @ 10V | 3700pF @ 25V | 125W | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ |
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IXYS |
MOSFET N/P-CH 150V 36A/22A I4PAC |
6.912 |
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Polar™ | N and P-Channel | Standard | 150V | 36A, 22A | 40mOhm @ 31A, 10V | 5.5V @ 250µA | 70nC @ 10V | 2250pF @ 25V | 125W | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ |
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IXYS |
MOSFET 2N-CH 150V 53A I4-PAC |
4.428 |
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GigaMOS™, HiPerFET™, TrenchT2™ | 2 N-Channel (Dual) | Standard | 150V | 53A | 20mOhm @ 55A, 10V | 4.5V @ 250µA | 150nC @ 10V | 8600pF @ 25V | 180W | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ |
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IXYS |
MOSFET 2N-CH 100V 75A I4-PAC-5 |
6.696 |
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HiPerFET™ | 2 N-Channel (Dual) | Standard | 100V | 75A | 25mOhm @ 50A, 10V | 4V @ 4mA | 180nC @ 10V | - | - | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ |
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IXYS |
MOSFET 2N-CH 75V 120A I4-PAC-5 |
2.304 |
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HiPerFET™, TrenchT2™ | 2 N-Channel (Dual) Asymmetrical | Standard | 75V | 120A | 5.8mOhm @ 100A, 10V | 4V @ 250µA | 178nC @ 10V | 10500pF @ 25V | 170W | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUSi5-Pak™ | ISOPLUS i4-PAC™ |
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IXYS |
MOSFET 2N-CH 500V 13A I4-PAC |
7.200 |
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HiPerFET™, PolarHT™ | 2 N-Channel (Dual) | Standard | 500V | 13A | 270mOhm @ 11A, 10V | 5V @ 1mA | 50nC @ 10V | 2630pF @ 25V | 132W | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ |
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IXYS |
MOSFET 2N-CH 600V 12A I4-PAC |
6.786 |
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HiPerFET™, PolarHT™ | 2 N-Channel (Dual) | Standard | 600V | 12A | 350mOhm @ 11A, 10V | 5V @ 1mA | 58nC @ 10V | 3600pF @ 25V | 130W | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ |
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IXYS |
MOSFET 2N-CH 100V 75A I4-PAC-5 |
3.366 |
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HiPerFET™ | 2 N-Channel (Dual) | Standard | 100V | 75A | 25mOhm @ 50A, 10V | 4V @ 4mA | 180nC @ 10V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | i4-Pac™-5 | ISOPLUS i4-PAC™ |
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IXYS |
MOSFET 6N-CH 100V 90A 24-SMD |
8.982 |
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- | 6 N-Channel (3-Phase Bridge) | Standard | 100V | 90A | - | 4.5V @ 1mA | 90nC @ 10V | - | - | -55°C ~ 175°C (TJ) | Surface Mount | 24-SMD, Gull Wing | 24-SMD |
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IXYS |
MOSFET 6N-CH 150V 50A 24-SMD |
3.204 |
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- | 6 N-Channel (3-Phase Bridge) | Standard | 150V | 50A | 24mOhm @ 38A, 10V | 4.5V @ 1mA | 97nC @ 10V | 5800pF @ 25V | - | -55°C ~ 175°C (TJ) | Surface Mount | ISOPLUS-DIL™ | ISOPLUS-DIL™ |
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IXYS |
MOSFET 6N-CH 85V 103A ISOPLUS |
5.688 |
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- | 6 N-Channel (3-Phase Bridge) | Standard | 85V | 103A | 6.2mOhm @ 75A, 10V | 4V @ 250µA | 114nC @ 10V | - | - | -55°C ~ 175°C (TJ) | Surface Mount | 17-SMD, Gull Wing | ISOPLUS-DIL™ |