Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 137/999
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Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 18A ITO220S |
30.282 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 190mOhm @ 3.7A, 10V | 4V @ 250µA | 32nC @ 10V | ±30V | 1311pF @ 100V | - | 59.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 150V 60A TO-220AB |
22.116 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 60A (Tc) | 10V | 32mOhm @ 36A, 10V | 5.5V @ 250µA | 140nC @ 10V | ±30V | 3470pF @ 25V | - | 2.4W (Ta), 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 148A TO220 |
30.546 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 148A (Ta) | 10V | 4.8mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | ±20V | 5400pF @ 50V | - | 192W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 20A TO220FP |
23.142 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4V, 5V | 50mOhm @ 12A, 5V | 2V @ 250µA | 35nC @ 5V | ±10V | 1600pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 200V 6.2A TO220FP |
12.438 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 6.2A (Tc) | 4V, 5V | 400mOhm @ 3.7A, 5V | 2V @ 250µA | 40nC @ 10V | ±10V | 1100pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 600V 12A TO220AB |
19.932 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58nC @ 10V | ±30V | 937pF @ 100V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO220AB |
12.270 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6540pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 800V 2.1A TO220FP |
24.510 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 2.1A (Tc) | 10V | 3Ohm @ 1.3A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1300pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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ON Semiconductor |
MOSFET N-CH 60V 80A TO-220AB |
13.578 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 18A (Ta), 80A (Tc) | 6V, 10V | 5mOhm @ 80A, 10V | 4V @ 250µA | 80nC @ 10V | ±20V | 3900pF @ 25V | - | 245W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 300A H-PSOF8 |
22.692 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 300A (Tc) | 10V | 0.65mOhm @ 80A, 10V | 4V @ 250µA | 296nC @ 10V | ±20V | 15900pF @ 25V | - | 429W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Nexperia |
MOSFET N-CH 60V 150A TO-220 |
36.996 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 150A (Tc) | 10V | 2.6mOhm @ 25A, 10V | 4V @ 1mA | 140nC @ 10V | ±20V | 7629pF @ 25V | - | 326W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 800V 5.2A TO-220 |
12.432 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 800V | 5.2A (Tc) | 10V | 1.8Ohm @ 2.6A, 10V | 4.5V @ 100µA | 56nC @ 10V | ±30V | 1138pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 800V 8A TO-220FP |
13.182 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 630mOhm @ 4A, 10V | 5V @ 100µA | 15nC @ 10V | ±30V | 427pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO220AB |
21.312 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3450pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO-220AB |
12.372 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6860pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 195A TO220 |
33.330 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 195A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.7V @ 250µA | 407nC @ 10V | ±20V | 13660pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
13.734 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 28mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1900pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 9.2A TO-220AB |
26.136 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | ±30V | 1400pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 34A TO-220AB FP |
90.840 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 34A (Tc) | 10V | 16mOhm @ 20A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4440pF @ 50V | - | 46W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 11A D2PAK |
22.590 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 520mOhm @ 6.6A, 10V | 4V @ 250µA | 52nC @ 10V | ±30V | 1423pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 800V 13A TO247-3 |
8.880 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 13A (Tc) | 10V | 360mOhm @ 5.6A, 10V | 3.5V @ 280µA | 30nC @ 10V | ±20V | 930pF @ 500V | - | 84W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 23A HSOF-8 |
17.922 |
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CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 650V | 23A (Tc) | 10V | 102mOhm @ 7.8A, 10V | 4V @ 390µA | 34nC @ 10V | ±20V | 1320pF @ 400V | - | 141W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-2 | 8-PowerSFN |
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IXYS |
MOSFET N-CH 55V 200A TO-263 |
10.032 |
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TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 55V | 200A (Tc) | 10V | 4.2mOhm @ 50A, 10V | 4V @ 250µA | 109nC @ 10V | ±20V | 6800pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 9.5A TO220SIS |
6.732 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 800V | 9.5A (Ta) | 10V | 550mOhm @ 4.8A, 10V | 4V @ 450µA | 19nC @ 10V | ±20V | 1150pF @ 300V | - | 40W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Nexperia |
MOSFET N-CH 80V 120A TO220AB |
33.000 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 3.3mOhm @ 25A, 10V | 4V @ 1mA | 139nC @ 10V | ±20V | 9961pF @ 40V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 44A TO-220AB |
13.890 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 44A (Tc) | 10V | 55mOhm @ 26A, 10V | 5.5V @ 250µA | 140nC @ 10V | ±30V | 3430pF @ 25V | - | 2.4W (Ta), 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 800V 11A ZNR |
17.670 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 400mOhm @ 5.5A, 10V | 4.5V @ 1.1mA | 56nC @ 10V | ±20V | 2350pF @ 100V | - | 35.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 650V 8.5A TO-220AB |
13.878 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 8.5A (Tc) | 10V | 930mOhm @ 5.1A, 10V | 4V @ 250µA | 48nC @ 10V | ±30V | 1417pF @ 25V | - | 167W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 160A TO220AB |
23.232 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 4340pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 9.2A TO-262 |
10.380 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | ±30V | 1400pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |