Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 139/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 600V 15A TO220 FULLP |
23.712 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 78nC @ 10V | ±30V | 1350pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 60V 12A TO220FP |
21.408 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 12A (Tc) | 10V | 140mOhm @ 7.2A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 1100pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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ON Semiconductor |
MOSFET N-CH 500V 20A TO-220F |
30.798 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 230mOhm @ 10A, 10V | 5V @ 250µA | 59.5nC @ 10V | ±30V | 3120pF @ 25V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 500V 22A TO-220 |
23.244 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 220mOhm @ 11A, 10V | 5V @ 250µA | 65nC @ 10V | ±30V | 3200pF @ 25V | - | 312.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Microchip Technology |
MOSFET N-CH 240V 540MA TO92-3 |
19.608 |
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- | N-Channel | MOSFET (Metal Oxide) | 240V | 540mA (Tj) | 5V, 10V | 1.25Ohm @ 2A, 10V | 3V @ 5mA | - | ±20V | 350pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 11.5A TO220SIS |
7.470 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 800V | 11.5A (Ta) | 10V | 450mOhm @ 5.8A, 10V | 4V @ 570µA | 23nC @ 10V | ±20V | 1400pF @ 300V | - | 45W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 20.2A TO220 |
7.428 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73nC @ 10V | ±20V | 1620pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 650V 15A TO-220F |
21.522 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 440mOhm @ 7.5A, 10V | 5V @ 250µA | 63nC @ 10V | ±30V | 3095pF @ 25V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 26A TO-220AB |
23.904 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1980pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 120A TO-220-3 |
13.380 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4.5mOhm @ 100A, 10V | 4V @ 250µA | 74nC @ 10V | ±20V | 5270pF @ 50V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 80A TO-220AB |
15.996 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta), 80A (Tc) | 6V, 10V | 3.8mOhm @ 80A, 10V | 4V @ 250µA | 124nC @ 10V | ±20V | 6400pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 500V 20A TO-220F |
46.776 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 260mOhm @ 10A, 10V | 5V @ 250µA | 65nC @ 10V | ±30V | 3390pF @ 25V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 200V 90A TO220AB |
7.272 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 90A (Tc) | 7.5V, 10V | 15.2mOhm @ 30A, 10V | 4V @ 250µA | 87nC @ 10V | ±20V | 31200pF @ 100V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 19A TO-263 |
18.060 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 19A (Tc) | 10V | 184mOhm @ 10A, 10V | 4V @ 250µA | 92nC @ 10V | ±30V | 1640pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 11.5A TO220 |
9.324 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 800V | 11.5A (Ta) | 10V | 450mOhm @ 5.8A, 10V | 4V @ 570µA | 23nC @ 10V | ±20V | 1400pF @ 300V | - | 165W (Tc) | 150°C | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 800V 17A TO247 |
7.128 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 280mOhm @ 7.2A, 10V | 3.5V @ 360µA | 10nC @ 10V | ±20V | 1200pF @ 500V | Super Junction | 101W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
MOSFET N CH 60V 172A TO247 |
69.228 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 172A (Tc) | 6V, 10V | 3.3mOhm @ 100A, 10V | 3.7V @ 150µA | 210nC @ 10V | ±20V | 7020pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Siliconix |
MOSFET P-CH 200V 6.1A TO220FP |
18.456 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 6.1A (Tc) | 10V | 500mOhm @ 3.7A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1200pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
MOSFET N-CH 500V 12A TO220FP |
12.132 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 320mOhm @ 6A, 10V | 4V @ 100µA | 27nC @ 10V | ±25V | 816pF @ 50V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 75V 164A TO-220 |
20.820 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 75V | 164A (Tc) | 10V | 4.7mOhm @ 80A, 10V | 4.5V @ 250µA | 152nC @ 10V | ±20V | 9415pF @ 25V | - | 268W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH 300V 36A TO-220 |
12.996 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 300V | 36A (Tc) | 10V | 110mOhm @ 18A, 10V | 5.5V @ 250µA | 70nC @ 10V | ±30V | 2250pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 90A TO220AB |
10.848 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 90A (Tc) | 7.5V, 10V | 17mOhm @ 30A, 10V | 4V @ 250µA | 96nC @ 10V | ±20V | 4132pF @ 100V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 1500V 2.5A TO3P3 |
6.714 |
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- | N-Channel | MOSFET (Metal Oxide) | 1500V | 2.5A (Ta) | 10V | 10.5Ohm @ 1.25A, 10V | - | 34nC @ 10V | ±30V | 650pF @ 30V | - | 2.5W (Ta), 140W (Tc) | 150°C (TJ) | Through Hole | TO-3P(L) | TO-3PL |
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IXYS |
MOSFET N-CH 100V 160A TO-220 |
16.416 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 160A (Tc) | 10V | 7mOhm @ 25A, 10V | 4.5V @ 250µA | 132nC @ 10V | ±30V | 6600pF @ 25V | - | 430W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 16A TO-220 |
7.200 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 400mOhm @ 8A, 10V | 5.5V @ 2.5mA | 43nC @ 10V | ±30V | 2250pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 24A TO220 |
18.576 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 140mOhm @ 12A, 10V | 4V @ 250µA | 41.5nC @ 10V | ±25V | 1790pF @ 100V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 60V 180A TO220 |
20.136 |
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Automotive, AEC-Q101, STripFET™ F6 | N-Channel | MOSFET (Metal Oxide) | 60V | 180A (Tc) | 10V | 2.85mOhm @ 60A, 10V | 4V @ 250µA | 183nC @ 10V | ±20V | 11800pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB |
16.488 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 290nC @ 10V | ±20V | 7960pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 1000V 8A TO-247 |
7.116 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 1000V | 8A (Tc) | 10V | 1.45Ohm @ 4A, 10V | 5V @ 250µA | 70nC @ 10V | ±30V | 3220pF @ 25V | - | 225W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
NCHANNEL 950V ZENER POWER MOSFET |
20.460 |
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MDmesh™ | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |