Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 140/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 250V 23A TO-247AC |
7.212 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 23A (Tc) | 10V | 140mOhm @ 14A, 10V | 4V @ 250µA | 140nC @ 10V | ±20V | 2700pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 560V 16A TO-247 |
8.082 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 16A (Tc) | 10V | 280mOhm @ 10A, 10V | 3.9V @ 675µA | 66nC @ 10V | ±20V | 1600pF @ 25V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 17.5A TO247 |
58.788 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 730µA | 68nC @ 10V | ±20V | 1850pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 23.8A TO220-FP |
15.780 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 23.8A (Tc) | 10V | 160mOhm @ 11.3A, 10V | 3.5V @ 750µA | 75nC @ 10V | ±20V | 1660pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO247 |
16.176 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | ±20V | 1400pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 23.8A TO220 |
14.016 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 23.8A (Tc) | 10V | 160mOhm @ 11.3A, 10V | 3.5V @ 750µA | 75nC @ 10V | ±20V | 1660pF @ 100V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 29A D2PAK |
12.558 |
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Automotive, AEC-Q101, FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 110mOhm @ 14.5A, 10V | 5V @ 250µA | 80.4nC @ 10V | ±25V | 2785pF @ 50V | - | 190W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CHANNEL 600V 30A TO247 |
10.560 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | 5V @ 1mA | 56nC @ 10V | ±20V | 2350pF @ 25V | - | 305W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 20A TO247 |
7.992 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 370mOhm @ 10A, 10V | 4.5V @ 250µA | 74nC @ 10V | ±30V | 3680pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 20A TO247 |
7.452 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 199mOhm @ 10A, 10V | 4.1V @ 250µA | 19.8nC @ 10V | ±30V | 1038pF @ 100V | - | 266W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 11A TO220FP |
18.888 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 11A (Tc) | 10V | 200mOhm @ 6.6A, 10V | 4V @ 250µA | 61nC @ 10V | ±20V | 1400pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 100A TO220 |
15.900 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 10V | 3.4mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | ±20V | 8800pF @ 50V | - | 255W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO220AB |
19.992 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 9620pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 72A TO220AB |
108.900 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 72A (Tc) | 10V | 4.5mOhm @ 43A, 10V | 4V @ 250µA | 290nC @ 10V | ±20V | 9540pF @ 50V | - | 61W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 800V 12A ITO220S |
20.724 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 12A (Tc) | 10V | 400mOhm @ 2.7A, 10V | 4V @ 250µA | 51nC @ 10V | ±30V | 1848pF @ 100V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 22.4A TO220 |
9.624 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 1500V 2A TO-220F |
9.096 |
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- | N-Channel | MOSFET (Metal Oxide) | 1500V | 2A (Ta) | 10V | 13Ohm @ 1A, 10V | - | 37.5nC @ 10V | ±20V | 380pF @ 30V | - | 2W (Ta), 35W (Tc) | 150°C (TJ) | Through Hole | TO-220F-3FS | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 900V 9A TO-3P |
10.308 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 9A (Tc) | 10V | 1.4Ohm @ 4.5A, 10V | 5V @ 250µA | 58nC @ 10V | ±30V | 2730pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 31A TO-247AC |
15.108 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 31A (Tc) | 10V | 77mOhm @ 19A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | 1700pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 50A TO-220 |
7.074 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 50A (Tc) | 10V | 50mOhm @ 25A, 10V | 5V @ 1mA | 78nC @ 10V | ±30V | 4000pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 100V 130A TO-3P |
6.924 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 9.1mOhm @ 25A, 10V | 4.5V @ 250µA | 104nC @ 10V | ±20V | 5080pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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STMicroelectronics |
MOSFET N-CH 600V 11A TO-220FP |
14.862 |
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FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 5V @ 250µA | 24.5nC @ 10V | ±25V | 845pF @ 50V | - | 25W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 100V 19A D2PAK |
21.036 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 19A (Tc) | 10V | 200mOhm @ 11A, 10V | 4V @ 250µA | 61nC @ 10V | ±20V | 1400pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 3.5A TO220FP |
18.192 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.5A (Tc) | 10V | 1.2Ohm @ 2.1A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1300pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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IXYS |
MOSFET N-CH 600V 22A TO220AB |
6.966 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 360mOhm @ 11A, 10V | 5V @ 1.5mA | 38nC @ 10V | ±30V | 2600pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 250V 40A TO-3P |
7.380 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 40A (Tc) | 10V | 70mOhm @ 20A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4000pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 100V 67A TO-220-3 |
14.424 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 67A (Tc) | 10V | 4.5mOhm @ 67A, 10V | 4V @ 250µA | 74nC @ 10V | ±20V | 5270pF @ 50V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 900V 4.7A TO-247AC |
10.620 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 4.7A (Tc) | 10V | 2.5Ohm @ 2.8A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 1600pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Cree/Wolfspeed |
MOSFET N-CH 900V 11A |
19.056 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 900V | 11A (Tc) | 15V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | +18V, -8V | 150pF @ 600V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 17A TO220SIS |
15.156 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Ta) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 850µA | 32nC @ 10V | ±20V | 2050pF @ 300V | - | 45W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |