Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 141/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 400V 5.7A TO220FP |
16.308 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.7A (Tc) | 10V | 550mOhm @ 3.4A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1100pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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ON Semiconductor |
MOSFET N-CH 200V 62A TO-220 |
15.936 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 200V | 62A (Tc) | 10V | 27mOhm @ 31A, 10V | 5V @ 250µA | 99nC @ 10V | ±30V | 7230pF @ 25V | - | 260W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 250V 50A TO-220 |
19.704 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 250V | 50A (Tc) | 10V | 42.5mOhm @ 25A, 10V | 5V @ 250µA | 101nC @ 10V | ±30V | 7280pF @ 25V | - | 260W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH 650V 22A TO-263 |
7.080 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 160mOhm @ 11A, 10V | 5.5V @ 1.5mA | 38nC @ 10V | ±30V | 2310pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 80V 310A TO263 |
16.452 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 310A (Tc) | 10V | 1.6mOhm @ 36A, 10V | 4V @ 250µA | 304nC @ 10V | ±20V | 23660pF @ 40V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 500V 21A TO220-3 |
16.872 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | ±20V | 2400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 1000V 8A TO-3P |
7.824 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 1000V | 8A (Tc) | 10V | 1.45Ohm @ 4A, 10V | 5V @ 250µA | 70nC @ 10V | ±30V | 3220pF @ 25V | - | 225W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 60V 75A TO-220AB |
12.360 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 75A (Tc) | 10V | 13mOhm @ 40A, 10V | 4V @ 250µA | 115nC @ 10V | ±20V | 3600pF @ 25V | - | 150W (Tc) | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 100A TO-220 |
7.680 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 3.8mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | ±20V | 8800pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 800V 7.8A TO-247AC |
8.340 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 7.8A (Tc) | 10V | 1.2Ohm @ 4.7A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 3100pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 250V 69A TO-3P |
16.704 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 69A (Tc) | 10V | 41mOhm @ 34.5A, 10V | 5V @ 250µA | 100nC @ 10V | ±30V | 4640pF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 500V 16A TO-247 |
7.470 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 400mOhm @ 8A, 10V | 5.5V @ 2.5mA | 43nC @ 10V | ±30V | 2250pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 60V 29A TO220-3 |
18.732 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 29A (Ta), 120A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 2.8V @ 143µA | 106nC @ 10V | ±20V | 7800pF @ 30V | - | 3W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 950V 8A TO-220 |
13.056 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 950V | 8A (Tc) | 10V | 800mOhm @ 4A, 10V | 5V @ 100µA | 22nC @ 10V | ±30V | 630pF @ 100V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 120A TO-247AC |
15.186 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 9400pF @ 50V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 55V 75A TO-247 |
19.404 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 275nC @ 20V | ±20V | 4000pF @ 25V | - | 325W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 500V 14A TO-220FP |
16.614 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 340mOhm @ 7A, 10V | 4.5V @ 100µA | 106nC @ 10V | ±30V | 2260pF @ 25V | - | 40W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 15A TO-247 |
10.056 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 280mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63nC @ 10V | ±20V | 1660pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 600V TO-220-3 |
13.806 |
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SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 199mOhm @ 8A, 10V | 4V @ 250µA | 52.3nC @ 10V | ±30V | 2170pF @ 100V | - | 35.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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IXYS |
120V/140A TRENCHT2 POWER MOSFET |
8.160 |
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TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 120V | 140A (Tc) | 10V | 10mOhm @ 70A, 10V | 4.5V @ 250µA | 174nC @ 10V | ±20V | 9700pF @ 25V | - | 577W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 18A EP TO220FP |
14.910 |
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MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 188mOhm @ 9A, 10V | 4.75V @ 250µA | 29nC @ 10V | ±25V | 1090pF @ 100V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 18A TO220FP |
17.484 |
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FDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 200mOhm @ 9A, 10V | 5V @ 250µA | 29nC @ 10V | ±25V | 1055pF @ 100V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 500V 13A TO-220FP |
16.572 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 4V @ 250µA | 19.5nC @ 10V | ±25V | 710pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 120V 100A TO220-3 |
14.604 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 100A (Tc) | 10V | 4.8mOhm @ 100A, 10V | 4V @ 230µA | 182nC @ 10V | ±20V | 12000pF @ 60V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A TO-220AB |
16.524 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1100pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 500V 23A TO-220 |
17.676 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 23A (Tc) | 10V | 140mOhm @ 14A, 10V | 3.5V @ 930µA | 64nC @ 10V | ±20V | 2540pF @ 100V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 1500V 2A |
7.008 |
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- | N-Channel | MOSFET (Metal Oxide) | 1500V | 2A (Ta) | 10V | 13Ohm @ 1A, 10V | - | 37.5nC @ 10V | ±20V | 380pF @ 30V | - | 2.5W (Ta), 110W (Tc) | 150°C (TJ) | Through Hole | TO-3P-3L | TO-3P-3, SC-65-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 22A TO-247AC |
31.398 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 230mOhm @ 13A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 3450pF @ 25V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N CH 600V 17A I2PAK |
12.522 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 190mOhm @ 8A, 10V | 4V @ 250µA | 46nC @ 10V | ±30V | 1400pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 600V 22A TO-220 |
16.788 |
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SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 165mOhm @ 11A, 10V | 4V @ 250µA | 45nC @ 10V | ±45V | 1950pF @ 100V | - | 205W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |