Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 136/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 60V 65A TO-220 |
17.322 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 65A (Tc) | 10V | 16mOhm @ 32.5A, 10V | 4V @ 250µA | 65nC @ 10V | ±25V | 2410pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Nexperia |
MOSFET N-CH 60V 130A TO-220 |
31.554 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 130A (Tc) | 4.5V, 10V | 3.9mOhm @ 25A, 10V | 2.1V @ 1mA | 151nC @ 10V | ±20V | 8533pF @ 25V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 210A TO-220AB |
23.364 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 210A (Tc) | 10V | 3.6mOhm @ 130A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 5890pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 28A D2PAK |
19.560 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 4V, 5V | 77mOhm @ 17A, 5V | 2V @ 250µA | 64nC @ 5V | ±10V | 2200pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 80V 140A TO263-3 |
27.000 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.8V @ 208µA | 166nC @ 10V | ±20V | 12100pF @ 40V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 900V 3.6A TO-220AB |
15.270 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CHANNEL 600V 13A DPAK |
24.984 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 309mOhm @ 7A, 10V | 4V @ 250µA | 64nC @ 10V | ±30V | 1205pF @ 100V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB |
15.534 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4.7mOhm @ 104A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 5110pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 10A D2PAK |
14.694 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1400pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 41A TO-220AB |
18.390 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 41A (Tc) | 10V | 45mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | ±30V | 2520pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB |
16.416 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 4780pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
MOSFET N-CH 60V 120A I2PAK |
32.586 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3.5mOhm @ 25A, 10V | 4V @ 1mA | 114nC @ 10V | ±20V | 8920pF @ 25V | - | 293W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Nexperia |
MOSFET N-CH 30V TO220AB |
26.436 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 1.8mOhm @ 25A, 10V | 2.15V @ 1mA | 170nC @ 10V | ±20V | 10180pF @ 12V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 55V 31A DPAK |
38.352 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 65mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1200pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 250V 33A TO-3PN |
18.828 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 33A (Tc) | 10V | 94mOhm @ 16.5A, 10V | 5V @ 250µA | 46.8nC @ 10V | ±30V | 2200pF @ 25V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 100V 57A TO-220 |
26.232 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 57A (Tc) | 10V | 15mOhm @ 49A, 10V | 4.5V @ 250µA | 69nC @ 10V | ±20V | 4760pF @ 25V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 29A TO263 |
20.808 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 29A (Tc) | 10V | 150mOhm @ 14.5A, 10V | 3.9V @ 250µA | 26.6nC @ 10V | ±30V | 1312pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 80A TO220-3 |
177.822 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 5.2mOhm @ 80A, 10V | 3.8V @ 91µA | 68nC @ 10V | ±20V | 4750pF @ 37.5V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Nexperia |
MOSFET N-CH 60V 120A I2PAK |
136.896 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.6mOhm @ 25A, 10V | 4V @ 1mA | 158nC @ 10V | ±20V | 11180pF @ 25V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 500V 16A TO-220F |
21.162 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 380mOhm @ 8A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 1945pF @ 25V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 11A TO220 |
34.212 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 20.5nC @ 10V | ±30V | 1040pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 900V 1.7A TO-262 |
24.594 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 1.7A (Tc) | 10V | 8Ohm @ 1A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 490pF @ 25V | - | 3.1W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 400V 2.6A TO220FP |
12.138 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 2.6A (Tc) | 10V | 1.8Ohm @ 1.6A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 410pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
MOSFET N-CH 600V 11A IPAK |
23.082 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 17nC @ 10V | ±25V | 580pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 40V 160A TO-220AB |
43.890 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 4.3V, 10V | 4mOhm @ 95A, 10V | 3V @ 250µA | 140nC @ 5V | ±20V | 6590pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 48A TO-220AB |
30.372 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 48A (Tc) | 10V | 25mOhm @ 24A, 10V | 4V @ 250µA | 70nC @ 10V | ±20V | 1800pF @ 25V | - | 100W (Tc) | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 10A TO220FP |
12.612 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 640mOhm @ 5A, 10V | 4.5V @ 100µA | 59nC @ 10V | ±30V | 1740pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 250V 44A TO-220F |
63.618 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 44A (Tc) | 10V | 69mOhm @ 22A, 10V | 5V @ 250µA | 61nC @ 10V | ±30V | 2870pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Nexperia |
MOSFET N-CH 40V 120A I2PAK |
39.378 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.9mOhm @ 25A, 10V | 4V @ 1mA | 118nC @ 10V | ±20V | 9700pF @ 25V | - | 324W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 64A TO220FP |
15.732 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 64A (Tc) | 10V | 8mOhm @ 34A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 4000pF @ 25V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |