Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 133/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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STMicroelectronics |
MOSFET N-CH 800V 2A IPAK |
28.350 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 4.5Ohm @ 1A, 10V | 5V @ 100µA | 9.5nC @ 10V | 30V | 105pF @ 100V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Texas Instruments |
MOSFET N-CH 60V 200A D2PAK |
97.782 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 200A (Ta) | 4.5V, 10V | 4mOhm @ 100A, 10V | 2.2V @ 250µA | 57nC @ 10V | ±20V | 5070pF @ 30V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO262-3 |
16.974 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 8.6mOhm @ 73A, 10V | 3.5V @ 75µA | 55nC @ 10V | ±20V | 3980pF @ 50V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 60V 10A D2PAK |
18.564 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 200mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 100V 6.8A D2PAK |
24.888 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 600mOhm @ 4.1A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 31A TO220FP |
20.424 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 24mOhm @ 17A, 10V | 4V @ 250µA | 65nC @ 10V | ±20V | 1300pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 50V 2.4A 4-DIP |
21.468 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 2.4A (Tc) | 10V | 100mOhm @ 1.4A, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | 400pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Nexperia |
MOSFET N-CH 40V 100A TO220AB |
68.238 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4.6mOhm @ 25A, 10V | 4V @ 1mA | 42.3nC @ 10V | ±20V | 2683pF @ 12V | - | 148W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 250V 2.7A DPAK |
78.156 |
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- | P-Channel | MOSFET (Metal Oxide) | 250V | 2.7A (Tc) | 10V | 3Ohm @ 1.7A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 220pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 60A |
26.742 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 6V, 10V | 9mOhm @ 36A, 10V | 3.7V @ 50µA | 66nC @ 10V | ±20V | 2230pF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 50A DPAK TO252 |
17.202 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Tc) | 7.5V, 10V | 8.9mOhm @ 20A, 10V | 4V @ 250µA | 50nC @ 10V | ±20V | 1950pF @ 50V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 400V 1.8A I-PAK |
17.838 |
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- | P-Channel | MOSFET (Metal Oxide) | 400V | 1.8A (Tc) | 10V | 7Ohm @ 1.1A, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 270pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 150A TO-220AB |
14.964 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 150A (Tc) | 4.5V, 10V | 3.8mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | ±20V | 4170pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 80A TO-220-3 |
15.828 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 3.4mOhm @ 30A, 10V | 2.2V @ 250µA | 51nC @ 10V | ±20V | 5300pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 200V 3.6A DPAK |
29.112 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 3.6A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 340pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 40V 120A D2PAK |
31.938 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 5V | 1.4mOhm @ 25A, 10V | 2.1V @ 1mA | 120nC @ 5V | ±10V | 16400pF @ 25V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 60V 120A D2PAK |
23.574 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 5V | 2.5mOhm @ 25A, 5V | 2.1V @ 1mA | 120nC @ 5V | ±10V | 17450pF @ 25V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 80V 120A D2PAK |
29.904 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 5V | 4mOhm @ 25A, 10V | 2.1V @ 1mA | 123nC @ 5V | ±10V | 17130pF @ 25V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CH 450V 0.09A TO92-3 |
57.324 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 90mA (Ta) | 10V | 50Ohm @ 100mA, 10V | 3V @ 1mA | - | ±20V | 70pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 75V 75A TO-220AB |
35.142 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 9.4mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3270pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 10A D2PAK |
24.750 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 4V, 5V | 200mOhm @ 6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 6.7A TO220AB |
19.944 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
MOSFET N-CH 60V TO220AB |
126.372 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 4.6mOhm @ 25A, 10V | 4V @ 1mA | 70.8nC @ 10V | ±20V | 4426pF @ 30V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 55A TO-220 |
28.044 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 55A (Tc) | 10V | 22mOhm @ 27.5A, 10V | 4V @ 250µA | 37nC @ 10V | ±25V | 1510pF @ 25V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 900V 5.1A TO-220 |
16.548 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 5.1A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | ±20V | 710pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 3.3A D2PAK |
18.162 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 3.3A (Tc) | 10V | 1.8Ohm @ 2A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 410pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 120V 56A TO220-3 |
12.708 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 56A (Ta) | 10V | 14.7mOhm @ 56A, 10V | 4V @ 61µA | 49nC @ 10V | ±20V | 3220pF @ 60V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 11A D2PAK |
19.764 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 55A TO-220F |
24.636 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 55A (Tc) | 10V | 22mOhm @ 27.5A, 10V | 4V @ 250µA | 37nC @ 10V | ±25V | 1510pF @ 25V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 300V 14.4A TO-220 |
22.554 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 300V | 14.4A (Tc) | 10V | 290mOhm @ 7.2A, 10V | 5V @ 250µA | 40nC @ 10V | ±30V | 1360pF @ 25V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |