Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 131/999
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Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 650V TO-220-3 |
23.712 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 650mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | ±20V | 440pF @ 100V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 200V 17A D2PAK |
19.440 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 17A (Tc) | 4V, 5V | 180mOhm @ 10A, 5V | 2V @ 250µA | 66nC @ 5V | ±10V | 1800pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 80V 80A TO263-3 |
35.184 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 80A (Tc) | 6V, 10V | 6.7mOhm @ 73A, 10V | 3.5V @ 73µA | 56nC @ 10V | ±20V | 3840pF @ 40V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 2.1A 8-SOIC |
23.784 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 2.1A (Ta) | 6V, 10V | 155mOhm @ 3A, 10V | 4V @ 250µA | 50nC @ 10V | ±20V | - | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 450V 1.5A IPAK |
22.404 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 450V | 1.5A (Tc) | 10V | 4.5Ohm @ 500mA, 10V | 3.7V @ 250µA | 7nC @ 10V | ±30V | 160pF @ 25V | - | 30W (Tc) | -65°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
40.184 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 4.5V, 10V | 6mOhm @ 20A, 10V | 3V @ 250µA | 84nC @ 10V | ±20V | 2840pF @ 50V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CHAN 100V TO252 |
35.184 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 38A (Tc) | 4.5V, 10V | 40mOhm @ 8.2A, 10V | 2.5V @ 250µA | 144nC @ 10V | ±20V | 5540pF @ 15V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 55V 75A D2PAK |
23.694 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 3.7mOhm @ 25A, 10V | 2V @ 1mA | 95.6nC @ 5V | ±15V | 7665pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 38A DIRECTFET |
182.220 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 38A (Ta), 200A (Tc) | 4.5V, 10V | 1.25mOhm @ 38A, 10V | 2.35V @ 150µA | 69nC @ 4.5V | ±20V | 6750pF @ 13V | - | 2.8W (Ta), 96W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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ON Semiconductor |
MOSFET N-CH 60V 15.7A TO-220F |
95.814 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 15.7A (Tc) | 5V, 10V | 55mOhm @ 7.85A, 10V | 2.5V @ 250µA | 13nC @ 5V | ±20V | 630pF @ 25V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
51.390 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 10V | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CHANNEL 600V 9A TO220 |
13.134 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13nC @ 10V | ±20V | 555pF @ 400V | - | 22W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Nexperia |
MOSFET N-CH 40V 77A TO220AB |
31.872 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 77A (Tc) | 10V | 7.6mOhm @ 25A, 10V | 4V @ 1mA | 21nC @ 10V | ±20V | 1262pF @ 12V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 180A D2PAK |
30.642 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 150µA | 150nC @ 10V | ±20V | 4340pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 3.3A DPAK |
33.978 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 3.3A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 17nC @ 10V | ±30V | 340pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 200V 6.6A TO-220 |
15.312 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 6.6A (Tc) | 10V | 690mOhm @ 3.3A, 10V | 5V @ 250µA | 10nC @ 10V | ±30V | 400pF @ 25V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 30V 92A TO-220AB |
12.816 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 92A (Tc) | 4.5V, 10V | 5.9mOhm @ 35A, 10V | 2.5V @ 250µA | 67nC @ 10V | ±20V | 2525pF @ 15V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Nexperia |
MOSFET N-CH 100V 75A D2PAK |
31.770 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 15mOhm @ 25A, 10V | 4V @ 1mA | 90nC @ 10V | ±20V | 4900pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 62A TO-263AB |
19.200 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 10.9A (Ta), 62A (Tc) | 6V, 10V | 13.5mOhm @ 62A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 1350pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 75V 27A TO220AB |
45.846 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 27A (Tc) | 11V | 50mOhm @ 14A, 11V | 5V @ 2mA | 19nC @ 10V | ±30V | 810pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 36A TO-262 |
24.870 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1770pF @ 25V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 500V 4.5A TO220 |
21.390 |
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UniFET-II™ | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.25A, 10V | 5V @ 250µA | 12nC @ 10V | ±25V | 440pF @ 25V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V 2A TO-220 |
114.414 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.7Ohm @ 1A, 10V | 4V @ 250µA | 12nC @ 10V | ±30V | 235pF @ 25V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 12A TO220FP |
13.008 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 10V | 110mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 640pF @ 25V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 150V 13A I-PAK |
97.536 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Nexperia |
MOSFET N-CH 150V 28.5A TO220AB |
18.330 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 28.5A (Tj) | 10V | 65mOhm @ 18A, 10V | 4V @ 1mA | 24nC @ 10V | ±20V | 1250pF @ 30V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 120A TO263-3-2 |
21.420 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.8mOhm @ 100A, 10V | 4V @ 110µA | 134nC @ 10V | ±20V | 10740pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 50V 1.1A 4-DIP |
32.106 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 1.1A (Tc) | 10V | 500mOhm @ 580mA, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 240pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Nexperia |
MOSFET N-CH 100V 68A TO220AB |
96.402 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 68A (Tc) | 10V | 13.9mOhm @ 15A, 10V | 4V @ 1mA | 59nC @ 10V | ±20V | 3195pF @ 50V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
MOSFET N-CH 60V 120A D2PAK |
38.664 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3.1mOhm @ 25A, 10V | 4V @ 1mA | 114nC @ 10V | ±20V | 8920pF @ 25V | - | 293W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |