Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 128/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET P-CH 30V 12.6A 8DSO |
88.266 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 12.6A (Ta) | 4.5V, 10V | 8mOhm @ 14.9A, 10V | 2V @ 250µA | 136nC @ 10V | ±20V | 5890pF @ 25V | - | 1.79W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET P-CH 45V 7A SOP8 |
26.856 |
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- | P-Channel | MOSFET (Metal Oxide) | 45V | 7A (Ta) | 4V, 10V | 27mOhm @ 7A, 10V | 2.5V @ 1mA | 47.6nC @ 5V | ±20V | 4100pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 25V 40A 8-SOIC |
85.398 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 40A (Tc) | 4.5V, 10V | 2.7mOhm @ 20A, 10V | 2.2V @ 250µA | 161nC @ 10V | ±16V | 6670pF @ 15V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 20V 14A 1212-8 |
24.840 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 14A (Ta) | 4.5V, 10V | 4.9mOhm @ 22A, 10V | 2V @ 250µA | 30nC @ 4.5V | ±16V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO263-3-2 |
43.680 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.3mOhm @ 80A, 10V | 4V @ 53µA | 66nC @ 10V | ±20V | 5260pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 40V 12.5A 8SOIC |
42.948 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 12.5A (Ta) | 10V | 9mOhm @ 12.5A, 10V | 5V @ 250µA | 63nC @ 10V | +30V, -20V | 2659pF @ 20V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET N-CH 60V 75A D2PAK |
36.000 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 75A (Tc) | 10V | 8.3mOhm @ 20A, 10V | 4V @ 1mA | 43.1nC @ 10V | ±20V | 2920pF @ 25V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 11A IPAK |
52.152 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Tc) | 5V, 10V | 115mOhm @ 5.5A, 10V | 2.5V @ 250µA | 6.4nC @ 5V | ±20V | 350pF @ 25V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET NCH 80V 80A POWER56 |
23.250 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 80A (Tc) | 10V | 4.5mOhm @ 80A, 10V | 4V @ 250µA | 75nC @ 10V | ±20V | 4350pF @ 40V | - | 214W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO252-3 |
26.028 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 2.2mOhm @ 90A, 10V | 2.2V @ 90µA | 140nC @ 10V | ±16V | 9750pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 40V 100A D2PAK |
18.438 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4.5mOhm @ 25A, 10V | 4V @ 1mA | 42.3nC @ 10V | ±20V | 2683pF @ 20V | - | 148W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 200V 32.7A D2PAK |
17.196 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 32.7A (Tc) | 10V | 77mOhm @ 15A, 10V | 4V @ 1mA | 32.2nC @ 10V | ±20V | 1870pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 75V 9.2A POWER56 |
23.118 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 75V | 9.2A (Ta), 49A (Tc) | 4.5V, 10V | 14.5mOhm @ 11.5A, 10V | 3V @ 250µA | 91nC @ 10V | ±20V | 4765pF @ 40V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power Clip 56 | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 100V 57A D2PAK |
50.184 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 57A (Tj) | 10V | 16mOhm @ 15A, 10V | 4V @ 1mA | 49nC @ 10V | ±20V | 2404pF @ 50V | - | 148W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 120V 56A TO263-3 |
19.242 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 56A (Ta) | 10V | 14.4mOhm @ 56A, 10V | 4V @ 61µA | 49nC @ 10V | ±20V | 3220pF @ 60V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CH 100V 450MA TO92-3 |
23.370 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 450mA (Ta) | 5V, 10V | 1.5Ohm @ 1.5A, 10V | 2.4V @ 1mA | - | ±20V | 100pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Nexperia |
MOSFET N-CH 40V 75A D2PAK |
30.768 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 5.2mOhm @ 25A, 10V | 4V @ 1mA | 52nC @ 10V | ±20V | 3789pF @ 25V | - | 203W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 16A DIRECTFET |
37.458 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 16A (Ta), 55A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 2.2V @ 250µA | 17nC @ 4.5V | ±20V | 1360pF @ 10V | - | 1.4W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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Vishay Siliconix |
MOSFET N-CH 150V 3.5A 8-SOIC |
98.880 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 3.5A (Ta) | 10V | 50mOhm @ 5A, 10V | 2V @ 250µA (Min) | 36nC @ 10V | ±20V | - | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 150V 3.5A 8-SOIC |
19.056 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 3.5A (Ta) | 10V | 50mOhm @ 5A, 10V | 2V @ 250µA (Min) | 36nC @ 10V | ±20V | - | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET N-CH 75V 75A D2PAK |
29.268 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 8.5mOhm @ 25A, 10V | 4V @ 1mA | 122.8nC @ 10V | ±20V | 5260pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 4A TO-220 |
15.852 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.2Ohm @ 2A, 10V | 4.5V @ 250µA | 18nC @ 10V | ±30V | 615pF @ 25V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 7.7A I-PAK |
18.324 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 7.7A (Tc) | 10V | 270mOhm @ 4.6A, 10V | 4V @ 250µA | 16nC @ 10V | ±20V | 360pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO252-3-313 |
20.040 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 2mOhm @ 100A, 10V | 4V @ 95µA | 118nC @ 10V | ±20V | 9430pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 1.5A SOT23 |
23.952 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4.5V, 10V | 110mOhm @ 2.5A, 10V | 3V @ 250µA | 7nC @ 10V | ±20V | 135pF @ 15V | - | 420mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 100V 57A 8PQFN |
45.900 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 57A (Tc) | 6V, 10V | 8.5mOhm @ 21A, 10V | 4V @ 110µA | 20nC @ 6V | ±20V | 2090pF @ 50V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3) | 8-PowerWDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 3A TO251 |
222.768 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 3A (Tc) | 10V | 1.4Ohm @ 900mA, 10V | 4V @ 250µA | 7.12nC @ 10V | ±30V | 257.3pF @ 100V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET P-CH 200V 0.4A 4-DIP |
15.336 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 400mA (Ta) | 10V | 3Ohm @ 240mA, 10V | 4V @ 250µA | 8.9nC @ 10V | ±20V | 170pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET P-CH 8V 8SOIC |
23.562 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 8V | - | 1.8V, 4.5V | 9mOhm @ 14A, 4.5V | 1V @ 250µA | 85nC @ 4.5V | ±8V | - | - | 3W (Ta), 6.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 100V 7A 8-SOIC |
25.212 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 7A (Ta) | 6V, 10V | 23mOhm @ 7A, 10V | 4V @ 250µA | 16.5nC @ 10V | ±20V | 934pF @ 50V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |