Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 129/999
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Nexperia |
MOSFET N-CH 60V 100A D2PAK |
28.728 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3.9mOhm @ 25A, 10V | 4V @ 1mA | 103nC @ 10V | ±20V | 7480pF @ 25V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 25V 23A POWER56 |
44.052 |
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PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 23A (Ta), 49A (Tc) | 4.5V, 10V | 2.9mOhm @ 23A, 10V | 3V @ 1mA | 45nC @ 10V | ±20V | 2780pF @ 13V | - | 2.5W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 100V 4A D2PAK |
156.168 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 4A (Tc) | 10V | 1.2Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | 200pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
MOSFET N-CH 25V 100A 8-SON |
23.388 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 34A (Ta), 100A (Tc) | 4.5V, 10V | 1.9mOhm @ 30A, 10V | 2V @ 250µA | 21nC @ 4.5V | +16V, -12V | 3650pF @ 12.5V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 40V 20A TO263 |
13.122 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta), 105A (Tc) | 4.5V, 10V | 2.6mOhm @ 20A, 10V | 2.2V @ 250µA | 72nC @ 10V | ±20V | 3510pF @ 20V | - | 1.9W (Ta), 176W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO263-3-2 |
18.516 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 70µA | 90nC @ 10V | ±20V | 7180pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET P-CH 20V POWERDI5060-8 |
37.680 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 2.5V, 10V | 1.9mOhm @ 25A, 10V | 1.4V @ 250µA | 585nC @ 10V | ±12V | 12826pF @ 10V | - | 2.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 100V 18A TO220AB |
53.340 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 18A (Tc) | 10V | 90mOhm @ 9A, 10V | 4V @ 1mA | 21nC @ 10V | ±20V | 633pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
25.800 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 2.6A (Tc) | 10V | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 60V 12A IPAK |
32.562 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 12A (Tc) | 10V | 135mOhm @ 6A, 10V | 4V @ 250µA | 27nC @ 10V | ±25V | 900pF @ 25V | - | 2.5W (Ta), 44W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Nexperia |
MOSFET N-CH 25V LFPAK56 |
155.832 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 300A (Tc) | 4.5V, 10V | 0.72mOhm @ 25A, 10V | 2.2V @ 1mA | 110.2nC @ 10V | ±20V | 8320pF @ 12V | - | 158W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
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Vishay Siliconix |
MOSFET N-CH 250V 18.4A PPAK SO-8 |
50.700 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 18.4A (Tc) | 6V, 10V | 118mOhm @ 4.4A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | 2214pF @ 125V | - | 5.4W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 30V SO-8FL |
24.786 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta), 171A (Tc) | 4.5V, 10V | 2mOhm @ 22A, 10V | 2.5V @ 1mA | 83.6nC @ 10V | ±20V | 5660pF @ 15V | - | 950mW (Ta), 96.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Vishay Siliconix |
MOSFET P-CH 150V 8.9A 1212-8 |
85.116 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 8.9A (Tc) | 6V, 10V | 295mOhm @ 4A, 10V | 4V @ 250µA | 42nC @ 10V | ±20V | 1190pF @ 50V | - | 52W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
20.088 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 4V, 5V | 200mOhm @ 4.6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 40V 75A D2PAK |
35.034 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 5V | 3.5mOhm @ 25A, 10V | 2.1V @ 1mA | 52.1nC @ 5V | ±10V | 6650pF @ 25V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 75V 16A 1212-8 |
44.112 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 16A (Tc) | 4.5V, 10V | 37mOhm @ 7.2A, 10V | 3V @ 250µA | 24nC @ 10V | ±20V | 840pF @ 35V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 40V 20.5A 8-SOIC |
20.820 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 20.5A (Tc) | 4.5V, 10V | 7.5mOhm @ 14A, 10V | 3V @ 250µA | 77nC @ 10V | ±20V | 3540pF @ 20V | - | 2.5W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 150V 2.8A 8-SOIC |
18.834 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 2.8A (Tc) | 10V | 295mOhm @ 4A, 10V | 4V @ 250µA | 42nC @ 10V | ±20V | 1190pF @ 50V | - | 3.1W (Ta), 5.9W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 60V 56A POWER33 |
114.402 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 18A (Ta), 56A (Tc) | 4.5V, 10V | 4.3mOhm @ 18A, 10V | 3V @ 250µA | 88nC @ 10V | ±20V | 6705pF @ 30V | - | 2.3W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 700V 11A TO252 |
25.032 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 11A (Tc) | 10V | 380mOhm @ 3.3A, 10V | 4V @ 250µA | 18.8nC @ 10V | ±30V | 981pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
24.636 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 7.7A (Tc) | 10V | 270mOhm @ 4.6A, 10V | 4V @ 250µA | 16nC @ 10V | ±20V | 360pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A I-PAK |
24.168 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 10V | 540mOhm @ 900mA, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 11A TO252 |
22.146 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 20.5nC @ 10V | ±30V | 1040pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 650V POWERPAK SO-8L |
21.810 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 5.6A (Tc) | 10V | 868mOhm @ 3A, 10V | 4V @ 250µA | 32nC @ 10V | ±30V | 596pF @ 100V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Nexperia |
MOSFET N-CH 80V 75A D2PAK |
30.930 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 75A (Tc) | 5V | 10mOhm @ 20A, 10V | 2.1V @ 1mA | 48.8nC @ 5V | ±10V | 7149pF @ 25V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 40V 80A DPAK |
43.218 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 5V, 10V | 6mOhm @ 40A, 10V | 2.5V @ 250µA | 70nC @ 10V | ±16V | 2500pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 1000V 1.85A TO251 |
16.896 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 1.85A (Tc) | 10V | 8.5Ohm @ 900mA, 10V | 5.5V @ 250µA | 17nC @ 10V | ±30V | 625pF @ 25V | - | 77W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 40V 15A D2PAK |
21.336 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 15A (Ta), 50A (Tc) | 4.5V, 10V | 8.5mOhm @ 14A, 10V | 3V @ 250µA | 52nC @ 10V | ±20V | 2620pF @ 20V | - | 3.1W (Ta), 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8 |
38.490 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 30A (Ta), 100A (Tc) | 10V | 1.7mOhm @ 50A, 10V | 4V @ 85µA | 108nC @ 10V | ±20V | 8800pF @ 20V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |