Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 127/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CHAN 25V POWERPAK SO-8 |
24.156 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 81.7A (Ta), 100A (Tc) | 4.5V, 10V | 0.58mOhm @ 20A, 10V | 2.1V @ 250µA | 200nC @ 10V | +16V, -12V | 10850pF @ 10V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 30V 7.4A 1212-8 |
23.112 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 7.4A (Ta) | 4.5V, 10V | 18mOhm @ 11.7A, 10V | 3V @ 250µA | 56nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Nexperia |
MOSFET N-CH 60V 100A LFPAK |
200.412 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 5V | 4.1mOhm @ 25A, 10V | 2.1V @ 1mA | 50nC @ 5V | ±10V | 7853pF @ 25V | - | 238W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 60V 100A LFPAK |
31.002 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 4.8mOhm @ 25A, 10V | 4V @ 1mA | 73.1nC @ 10V | ±20V | 5520pF @ 25V | - | 238W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 80V 74A 8TDSON |
40.812 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 74A (Tc) | 6V, 10V | 7.2mOhm @ 37A, 10V | 3.8V @ 36µA | 29nC @ 10V | ±20V | 2100pF @ 40V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 100V 15A TO251 |
28.092 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Tc) | 4.5V, 10V | 90mOhm @ 5A, 10V | 2.5V @ 250µA | 9.3nC @ 10V | ±20V | 1480pF @ 50V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Stub Leads, IPak |
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Nexperia |
MOSFET N-CH 60V 34A D2PAK |
30.222 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 34A (Tc) | 4.5V, 5V | 37mOhm @ 20A, 10V | 2V @ 1mA | 17nC @ 5V | ±15V | 1280pF @ 25V | - | 97W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 8A DPAK |
30.606 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Ta) | 10V | 560mOhm @ 4A, 10V | 4.5V @ 400µA | 22nC @ 10V | ±30V | 590pF @ 300V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 80V 7.6A 8SOIC |
25.062 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 7.6A (Ta) | 6V, 10V | 29mOhm @ 7.6A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 1800pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET P-CH 30V 10A SOP8 |
26.346 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4V, 10V | 12.6mOhm @ 10A, 10V | 2.5V @ 1mA | 68nC @ 10V | ±20V | 3600pF @ 10V | - | 650mW (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N CH 60V 13.5A 8PQFN |
51.786 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 13.5A (Ta), 22A (Tc) | 4.5V, 10V | 8.2mOhm @ 13.5A, 10V | 3V @ 250µA | 63nC @ 10V | ±20V | 4615pF @ 30V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 150V 2A 8-SO |
47.088 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 2A (Ta) | 6V, 10V | 295mOhm @ 4A, 10V | 4V @ 250µA | 42nC @ 10V | ±20V | 1190pF @ 50V | - | 5.9W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET N-CH 55V 100A D2PAK |
29.334 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 6.5mOhm @ 25A, 10V | 2.8V @ 1mA | 82nC @ 10V | ±16V | 5160pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 28A 8-SOP ADV |
43.596 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 28A (Ta) | 10V | 5.9mOhm @ 14A, 10V | 4V @ 300µA | 38nC @ 10V | ±20V | 3100pF @ 30V | - | 1.6W (Ta), 57W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 150V 2.2A 1212-8 |
106.572 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 2.2A (Ta) | 6V, 10V | 135mOhm @ 3.4A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Rohm Semiconductor |
MOSFET N-CH 250V 8A SOT-428 |
24.018 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 8A (Ta) | 10V | 300mOhm @ 4A, 10V | 5V @ 1mA | 25nC @ 10V | ±30V | 1440pF @ 25V | - | 850mW (Ta), 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 20A POWER56 |
89.562 |
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PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 42A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 3V @ 1mA | 73nC @ 10V | ±20V | 4000pF @ 15V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 500V 3.3A DPAK |
23.334 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 3.3A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 17nC @ 10V | ±30V | 340pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 20V 8.8A 8-SOIC |
25.686 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 8.8A (Ta) | 2.5V, 4.5V | 14mOhm @ 10A, 4.5V | 1.2V @ 250µA | 70nC @ 4.5V | ±12V | 3640pF @ 16V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 16A SO-8FL |
84.090 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 156A (Tc) | 4.5V, 10V | 2mOhm @ 30A, 10V | 2.5V @ 250µA | 88nC @ 11.5V | ±20V | 5600pF @ 12V | - | 910mW (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Vishay Siliconix |
MOSFET P-CH 30V 6.5A 8-TSSOP |
25.110 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | - | 4.5V, 10V | 19mOhm @ 6.5A, 10V | 1V @ 250µA (Min) | 70nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
MOSFET P-CH 30V 6.5A 8-TSSOP |
24.546 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | - | 4.5V, 10V | 19mOhm @ 6.5A, 10V | 1V @ 250µA (Min) | 70nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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ON Semiconductor |
MOSFET N-CH 100V 40A ATPAK |
25.824 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Ta) | 10V | 33mOhm @ 20A, 10V | - | 68nC @ 10V | ±20V | 4000pF @ 20V | - | 70W (Tc) | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
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Vishay Siliconix |
MOSFET P-CH 30V 50A TO252 |
16.806 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 10mOhm @ 15A, 10V | 2.5V @ 250µA | 83nC @ 10V | ±20V | 3495pF @ 15V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 30V 300A 56LFPAK |
94.470 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 300A | 4.5V, 10V | 0.87mOhm @ 25A, 10V | 2.2V @ 1mA | 109nC @ 10V | ±20V | 7668pF @ 15V | - | 291W | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
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ON Semiconductor |
T6 40V MOSFET |
28.392 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 24A (Ta), 102A (Tc) | 10V | 3.3mOhm @ 50A, 10V | 3.5V @ 65µA | 23nC @ 10V | ±20V | 1600pF @ 25V | - | 3.6W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET P-CH 100V 15A TO252-3 |
25.860 |
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Automotive, AEC-Q101, SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 15A (Tc) | 10V | 240mOhm @ 10.6A, 10V | 2.1V @ 1.54mA | 48nC @ 10V | ±20V | 1280pF @ 25V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 400V 2A IPAK |
40.692 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 3.4Ohm @ 1A, 10V | 5V @ 250µA | 6nC @ 10V | ±30V | 225pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 800V 1.5A IPAK |
13.158 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 1.5A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | 3.5V @ 200µA | 4nC @ 10V | ±20V | 250pF @ 500V | Super Junction | 13W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 60V 24A |
50.928 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 24A (Tc) | 4.5V, 10V | 23mOhm @ 10.3A, 10V | 2.5V @ 250µA | 30nC @ 10V | ±20V | 1225pF @ 30V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |