Transistoren - FETs, MOSFETs - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Filter anzeigen
Filter zurücksetzen
Filter anwenden
KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 124/999
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Nexperia |
MOSFET N-CH 40V LFPAK |
773.208 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.5mOhm @ 25A, 10V | 4V @ 1mA | 49.4nC @ 10V | ±20V | 3583pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
|
|
Nexperia |
MOSFET N-CH 40V LFPAK |
28.674 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 5V | 3.6mOhm @ 25A, 10V | 2.1V @ 1mA | 30.2nC @ 5V | ±10V | 5137pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
|
|
Nexperia |
MOSFET N-CH 100V LFPAK |
13.038 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | - | 10V | - | - | - | ±20V | - | - | 169W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
|
|
Diodes Incorporated |
MOSFET 60V 90A DPAK |
25.866 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 5.6mOhm @ 50A, 10V | 3V @ 250µA | 47.1nC @ 10V | ±20V | 2962pF @ 30V | - | 2.1W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Diodes Incorporated |
MOSFET NCH 80V 50A TO252 |
26.070 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 80V | 50A (Tc) | 4.5V, 10V | 16mOhm @ 12A, 10V | 3V @ 250µA | 46.8nC @ 10V | ±20V | 2051pF @ 40V | - | 2.6W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
103.212 |
|
U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 4.5V, 10V | 13.5mOhm @ 10A, 4.5V | 2.5V @ 200µA | 22nC @ 10V | ±20V | 1875pF @ 30V | - | 81W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
|
|
|
Diodes Incorporated |
MOSFET N-CH 150V 2A SOT223 |
86.646 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 2A (Ta), 7.1A (Tc) | 5V, 10V | 310mOhm @ 1.5A, 10V | 3V @ 250µA | 8.7nC @ 10V | ±20V | 405pF @ 25V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 64A 8TDSON |
102.444 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 64A (Tc) | 6V, 10V | 6.6mOhm @ 50A, 10V | 3.3V @ 20µA | 21nC @ 10V | ±20V | 1500pF @ 30V | - | 2.5W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
|
|
|
Diodes Incorporated |
MOSFET N-CH 60V 14.8A TO252 |
26.808 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 14.8A (Ta), 70A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 3V @ 250µA | 41.3nC @ 10V | ±20V | 2090pF @ 30V | - | 3.1W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Nexperia |
MOSFET N-CH 75V 48.2A LFPAK |
214.572 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 48.2A (Tc) | 5V, 10V | 18mOhm @ 20A, 10V | 2.15V @ 1mA | 30nC @ 5V | ±15V | 3096pF @ 25V | - | 106W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 150V 2.8A 1212-8 |
26.046 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 2.8A (Tc) | 6V, 10V | 1.2Ohm @ 500mA, 10V | 4.5V @ 250µA | 9.8nC @ 10V | ±30V | 365pF @ 75V | - | 3.2W (Ta), 19.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 35A TO252-3 |
24.174 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 25mOhm @ 35A, 10V | 4V @ 39µA | 31nC @ 10V | ±20V | 2070pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Nexperia |
MOSFET N-CH 25V 66A D2PAK |
17.424 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 66A (Tc) | 10V | 10.5mOhm @ 25A, 10V | 2V @ 1mA | 12nC @ 5V | ±20V | 860pF @ 25V | - | 93W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
STMicroelectronics |
MOSFET N-CH 30V 11A 8-SOIC |
20.928 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Tc) | 5V, 10V | 10.5mOhm @ 5.5A, 10V | 1V @ 250µA | 30nC @ 5V | ±18V | 1440pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Vishay Siliconix |
MOSFET N-CH 60V 6A 1212-8 |
26.208 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 6A (Tc) | 4.5V, 10V | 58mOhm @ 5.4A, 10V | 3V @ 250µA | 20nC @ 10V | ±20V | 665pF @ 15V | - | 3.2W (Ta), 19.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
|
|
|
Nexperia |
MOSFET N-CH 55V 35A D2PAK |
28.488 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 35A (Tc) | 10V | 35mOhm @ 20A, 10V | 4V @ 1mA | - | ±20V | 872pF @ 25V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Nexperia |
MOSFET N-CH 30V 32A D2PAK |
13.242 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Tc) | 4.5V, 10V | 17mOhm @ 10A, 10V | 2.15V @ 1mA | 10.7nC @ 10V | ±20V | 552pF @ 15V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 200V 18.6A SO-8 |
22.290 |
|
ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 18.6A (Tc) | 7.5V, 10V | 60mOhm @ 10A, 10V | 4V @ 250µA | 23nC @ 7.5V | ±20V | 1110pF @ 100V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
|
|
Texas Instruments |
MOSFET N-CH 30V 25A 8VSON |
13.926 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta) | 4.5V, 10V | 6.9mOhm @ 10A, 10V | 1.9V @ 250µA | 22.3nC @ 10V | ±20V | 1510pF @ 15V | - | 3.1W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
|
|
|
ON Semiconductor |
MOSFET P-CH 20V 14A U8FL |
51.936 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 9A (Ta) | 2.5V, 4.5V | 6.7mOhm @ 12A, 4.5V | 1V @ 250µA | 56nC @ 4.5V | ±8V | 5000pF @ 10V | - | 840mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 15A DPAK |
26.496 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 66A (Tc) | 4.5V, 10V | 8mOhm @ 15A, 10V | 3V @ 250µA | 22nC @ 5V | ±20V | 1755pF @ 15V | - | 3.2W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Nexperia |
MOSFET N-CH 55V 34A D2PAK |
154.380 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 34A (Tc) | 5V, 10V | 32mOhm @ 25A, 10V | 2V @ 1mA | - | ±10V | 1173pF @ 25V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Diodes Incorporated |
MOSFET NCH 80V 10A POWERDI |
56.466 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 80V | 10A (Ta), 72A (Tc) | 4.5V, 10V | 17mOhm @ 12A, 10V | 3V @ 250µA | 46.8nC @ 10V | ±20V | 2051pF @ 40V | - | 2.6W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET P-CH 30V 9.2A 8DSO |
21.552 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 9.2A (Ta) | 10V | 13mOhm @ 11.7A, 10V | 2.2V @ 140µA | 81nC @ 10V | ±25V | 3520pF @ 25V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | P-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 650V 7A DPAK |
23.004 |
|
DTMOSV | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | ±30V | 380pF @ 300V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Texas Instruments |
MOSFET N-CH 25V 5X6 8SON |
22.038 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 21A (Ta), 97A (Tc) | 3V, 8V | 5mOhm @ 20A, 8V | 1.4V @ 250µA | 9.7nC @ 4.5V | +10V, -8V | 1365pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 12A DPAK |
20.370 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 46A (Tc) | 4.5V, 10V | 12mOhm @ 12A, 10V | 3V @ 250µA | 18nC @ 5V | ±20V | 1230pF @ 15V | - | 3.3W (Ta), 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Nexperia |
MOSFET N-CH 80V 22A D2PAK |
21.558 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 22A (Tc) | 10V | 46mOhm @ 10A, 10V | 4V @ 1mA | 11nC @ 10V | ±20V | 633pF @ 12V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Nexperia |
MOSFET N-CH 25V 100A LFPAK |
97.662 |
|
- | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 1.3mOhm @ 25A, 10V | 1.95V @ 1mA | 66nC @ 10V | ±20V | 4173pF @ 12V | - | 179W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
|
|
Infineon Technologies |
MOSFET N-CH 800V 3.9A TO252-3 |
52.314 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3.9A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23nC @ 10V | ±20V | 570pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |