Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 122/999
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET N-CH 30V 13A SO8FL |
123.762 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 93A (Tc) | 4.5V, 10V | 3.2mOhm @ 30A, 10V | 2.2V @ 250µA | 49.4nC @ 10V | ±20V | 4850pF @ 15V | - | 930mW (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Texas Instruments |
MOSFET N-CH 30V 35A 8VSON |
52.332 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 10.2mOhm @ 8A, 10V | 1.9V @ 250µA | 15nC @ 10V | ±20V | 998pF @ 15V | - | 3.2W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (3x3.15) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 60V 6-MLP |
54.750 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 7.5A (Ta) | 4.5V, 10V | 23mOhm @ 7.5A, 10V | 3V @ 250µA | 17nC @ 10V | ±20V | 1235pF @ 30V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-WDFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 800V 4A DPAK |
20.316 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | 3.5V @ 700µA | 10nC @ 10V | ±20V | 250pF @ 500V | Super Junction | 32W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 9A MICROFET |
29.010 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 10A (Tc) | 4.5V, 10V | 16mOhm @ 9A, 10V | 3V @ 250µA | 12nC @ 10V | ±20V | 720pF @ 15V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
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Nexperia |
MOSFET N-CH 100V 49A LFPAK |
124.434 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 49A (Tc) | 5V | 21.5mOhm @ 15A, 10V | 2.1V @ 1mA | 35.8nC @ 5V | ±10V | 4640pF @ 25V | - | 147W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 500V 6A DPAK |
15.714 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 6A (Tc) | 10V | 1.3Ohm @ 3.7A, 10V | 5V @ 250µA | 34nC @ 10V | ±20V | 1346pF @ 25V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 80V 46A POWERPAKSO-8 |
43.518 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 46A (Tc) | 4.5V, 10V | 12.5mOhm @ 10A, 10V | 2.5V @ 250µA | 35nC @ 10V | ±20V | 2100pF @ 25V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 57A POWERPAKSO-8 |
22.944 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 57A (Tc) | 10V | 8.7mOhm @ 10A, 10V | 3.5V @ 250µA | 45nC @ 10V | ±20V | 2800pF @ 25V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 30V 70A TO252-3 |
49.176 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 4.3mOhm @ 70A, 10V | 2.2V @ 30µA | 48nC @ 10V | ±16V | 3300pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 100V 800MA SOT223 |
18.510 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 800mA (Ta) | 5V, 10V | 1.5Ohm @ 1.5A, 10V | 2.4V @ 1mA | - | ±20V | 100pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET P-CH 200V 3.8A 1212-8 |
99.420 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 200V | 3.8A (Tc) | 6V, 10V | 1.05Ohm @ 1A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 666pF @ 50V | - | 3.7W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 20V 35A 1212-8 PPAK |
27.102 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 35A (Tc) | 4.5V, 10V | 3.7mOhm @ 20A, 10V | 2.2V @ 250µA | 53nC @ 10V | ±20V | 1900pF @ 10V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Nexperia |
MOSFET N-CH 80V 65A LFPAK |
243.312 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 65A (Tc) | 10V | 14mOhm @ 15A, 10V | 4V @ 1mA | 44.8nC @ 10V | ±20V | 3155pF @ 25V | - | 147W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 40V 100A LFPAK |
106.002 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4.4mOhm @ 25A, 10V | 4V @ 1mA | 39nC @ 10V | ±20V | 2781pF @ 25V | - | 147W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 40V 86A TO252-3-313 |
40.302 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 86A (Tc) | 10V | 5.2mOhm @ 86A, 10V | 4V @ 30µA | 37nC @ 10V | ±20V | 2960pF @ 25V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK |
29.190 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 10V | 100mOhm @ 8.4A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 1.8A 6-TSOP |
25.374 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.8A (Ta) | 6V, 10V | 170mOhm @ 2.4A, 10V | 2V @ 250µA (Min) | 6.6nC @ 10V | ±20V | - | - | 1.14W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 200V 9A DPAK |
21.660 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 280mOhm @ 4.5A, 10V | 5V @ 250µA | 23nC @ 10V | ±30V | 910pF @ 25V | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 170A 8WDFN |
13.128 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 170A (Tc) | 4.5V, 10V | 2.25mOhm @ 20A, 10V | 2.2V @ 250µA | 20nC @ 4.5V | ±20V | 2980pF @ 15V | - | 91W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET N-CH 40V 58A |
142.482 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 58A (Tc) | 4.5V, 10V | 6.3mOhm @ 14A, 10V | 2.5V @ 250µA | 55nC @ 10V | ±20V | 2450pF @ 20V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Nexperia |
MOSFET N-CH 30V 100A LFPAK |
272.274 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2.15mOhm @ 25A, 10V | 1.95V @ 1mA | 55nC @ 10V | ±20V | 3310pF @ 15V | - | 141W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8 |
349.536 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta), 40A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2V @ 250µA | 74nC @ 10V | ±20V | 5700pF @ 15V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET P-CHANNEL 20V 30A 8HSMT |
53.622 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 30A (Tc) | 4.5V | 6.7mOhm @ 15A, 4.5V | 1.2V @ 1mA | 60nC @ 4.5V | ±8V | 4800pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET P-CH 60V 8A 1212-8 PPAK |
54.396 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 8A (Tc) | 4.5V, 10V | 115mOhm @ 3.9A, 10V | 3V @ 250µA | 22nC @ 10V | ±20V | 600pF @ 30V | - | 3.2W (Ta), 19.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Diodes Incorporated |
MOSFET N-CH 60V 11A |
57.072 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta), 34A (Tc) | 4.5V, 10V | 10mOhm @ 13.5A, 10V | 2V @ 250µA | 33.5nC @ 10V | ±16V | 1925pF @ 30V | - | 2.08W (Ta), 19.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Nexperia |
MOSFET N-CH 75V 34A LFPAK |
25.680 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 34A (Tc) | 5V | 28mOhm @ 15A, 10V | 2V @ 1mA | 19nC @ 5V | ±15V | 2070pF @ 25V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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ON Semiconductor |
MOSFET N-CH 30V 21A POWER56 |
101.268 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 42A (Tc) | 4.5V, 10V | 3.8mOhm @ 21A, 10V | 3V @ 250µA | 56nC @ 10V | ±20V | 4105pF @ 15V | - | 2.5W (Ta), 62W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 13.3A 8-SOIC |
32.226 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13.3A (Ta) | 4.5V | 9mOhm @ 15A, 4.5V | 1V @ 250µA | 62nC @ 5V | ±12V | 3780pF @ 16V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Texas Instruments |
MOSFET P-CH 8V 9DSBGA |
53.886 |
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NexFET™ | P-Channel | MOSFET (Metal Oxide) | 8V | 5A (Ta) | 2.5V, 4.5V | 9.9mOhm @ 2A, 4.5V | 950mV @ 250µA | 24.6nC @ 4.5V | -6V | 1130pF @ 4V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 9-DSBGA | 9-UFBGA, DSBGA |