Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 120/999
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Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 40V SO8FL |
13.050 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | - | 4.5V, 10V | 10.3mOhm @ 20A, 10V | 2V @ 250µA | 7.3nC @ 10V | ±20V | 570pF @ 20V | - | 3.5W (Ta), 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
N-CHANNEL_55/60V |
20.016 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 19A (Tc) | 4.5V, 10V | 64mOhm @ 13A, 10V | 2V @ 14µA | 13nC @ 10V | ±20V | 354pF @ 25V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 70V 6.1A D-PAK |
42.444 |
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- | N-Channel | MOSFET (Metal Oxide) | 70V | 4.2A (Ta) | 4.5V, 10V | 130mOhm @ 4.4A, 10V | 1V @ 250µA | 7.4nC @ 10V | ±20V | 298pF @ 40V | - | 2.11W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
29.988 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 10V | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 550V 7.6A TO252 |
57.186 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 7.6A (Tc) | 13V | 500mOhm @ 2.3A, 13V | 3.5V @ 200µA | 18.7nC @ 10V | ±20V | 433pF @ 100V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 30V 100A LFPAK |
35.178 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 3.5mOhm @ 15A, 10V | 2.15V @ 1mA | 41nC @ 10V | ±20V | 2458pF @ 12V | - | 74W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 25V 16A TSDSON-8 |
241.530 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 16A (Ta), 40A (Tc) | 4.5V, 10V | 3.6mOhm @ 20A, 10V | 2V @ 250µA | 16nC @ 10V | ±20V | 1200pF @ 12V | - | 2.1W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 60V 4.1A 6-TSOP |
93.834 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 4.1A (Tc) | 4.5V, 10V | 100mOhm @ 3.2A, 10V | 3V @ 250µA | 11nC @ 10V | ±20V | 350pF @ 30V | - | 2W (Ta), 3.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 30V 25.7A 8SOIC |
40.512 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 25.7A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.5V @ 250µA | 203nC @ 10V | ±20V | 8190pF @ 15V | - | 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 40A DPAK |
23.628 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 40A (Tc) | 4.5V, 10V | 15mOhm @ 35A, 10V | 2.5V @ 250µA | 26nC @ 10V | ±20V | 880pF @ 15V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 11.6A SO8FL |
16.956 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11.6A (Ta), 79A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 10V | 2.2V @ 250µA | 43nC @ 10V | ±20V | 3044pF @ 15V | - | 920mW (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 30V 22A 8VQFN |
64.518 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 79A (Tc) | 4.5V, 10V | 4.5mOhm @ 47A, 10V | 2.35V @ 50µA | 41nC @ 10V | ±20V | 2360pF @ 10V | - | 3.6W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 60V 30A POWERPAKSO-8 |
25.272 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 13mOhm @ 10A, 10V | 3.5V @ 250µA | 35nC @ 10V | ±20V | 1700pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 9.4A 8TSON |
46.746 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 9.4A (Tc) | 10V | 33mOhm @ 4.7A, 10V | 4V @ 100µA | 11nC @ 10V | ±20V | 880pF @ 50V | - | 700mW (Ta), 27W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 9.6A 8TSON |
29.418 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 9.6A (Tc) | 10V | 30mOhm @ 4.8A, 10V | 4V @ 100µA | 11nC @ 10V | ±20V | 920pF @ 40V | - | 700mW (Ta), 27W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 30V 11A 8WDFN |
33.336 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 79A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.2V @ 250µA | 46.5nC @ 10V | ±20V | 3111pF @ 15V | - | 850mW (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Nexperia |
MOSFET N-CH 25V 70A LFPAK33 |
352.536 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 70A (Tc) | 4.5V, 10V | 2.8mOhm @ 25A, 10V | 2.15V @ 1mA | 37.7nC @ 10V | ±20V | 2432pF @ 12.5V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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Nexperia |
MOSFET N-CH 30V 70A LFPAK33 |
43.872 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 3.15mOhm @ 25A, 10V | 2.15V @ 1mA | 34.8nC @ 10V | ±20V | 2330pF @ 15V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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Diodes Incorporated |
MOSFET P-CH 30V 13A 8-SOIC |
23.370 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 11mOhm @ 13A, 10V | 2V @ 250µA | 60.4nC @ 10V | ±20V | 2748pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 60V 16.8A DPAK |
22.272 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 16.8A (Tc) | 10V | 63mOhm @ 8.4A, 10V | 4V @ 250µA | 15nC @ 10V | ±25V | 590pF @ 25V | - | 2.5W (Ta), 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET P-CH 12V 5A TSST8 |
26.292 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 5A (Ta) | 1.5V, 4.5V | 26mOhm @ 5A, 4.5V | 1V @ 1mA | 34nC @ 4.5V | ±10V | 2800pF @ 6V | - | 600mW (Ta) | 150°C (TJ) | Surface Mount | 8-TSST | 8-SMD, Flat Lead |
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Rohm Semiconductor |
MOSFET N-CH 40V 15A 8HSOP |
22.794 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 15A (Ta) | 4.5V, 10V | 10.6mOhm @ 15A, 10V | 2.5V @ 1mA | 15nC @ 10V | ±20V | 930pF @ 20V | - | 3W (Ta), 25W (Tc) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 800V 3A TO252-3 |
42.210 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 2Ohm @ 940mA, 10V | 3.5V @ 50µA | 9nC @ 10V | ±20V | 175pF @ 500V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET P-CH 45V 16A CPT3 |
77.460 |
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- | P-Channel | MOSFET (Metal Oxide) | 45V | 16A (Ta) | 4V, 10V | 50mOhm @ 16A, 10V | 3V @ 1mA | 16nC @ 5V | ±20V | 2000pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 8.3A 8WDFN |
16.050 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta), 69A (Tc) | 4.5V, 11.5V | 5mOhm @ 20A, 10V | 2.5V @ 250µA | 29nC @ 11.5V | ±20V | 2363pF @ 12V | - | 660mW (Ta), 46.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET P-CH 50V 5.3A DPAK |
22.980 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 5.3A (Tc) | 10V | 500mOhm @ 2.8A, 10V | 4V @ 250µA | 9.1nC @ 10V | ±20V | 240pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 60A POWERPAKSO-8 |
29.340 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 3.5mOhm @ 10A, 10V | 2.4V @ 250µA | 36nC @ 10V | +20V, -16V | 1873pF @ 15V | Schottky Diode (Body) | 43W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Nexperia |
MOSFET P-CH 200V 0.225A SOT223 |
173.298 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 225mA (Ta) | 10V | 12Ohm @ 200mA, 10V | 2.8V @ 1mA | - | ±20V | 90pF @ 25V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
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Texas Instruments |
MOSFET N-CH 12V 6DSBGA |
24.594 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 12V | 3.5A (Ta) | 2.5V, 4.5V | 10.2mOhm @ 1.5A, 4.5V | 1.3V @ 250µA | 11.2nC @ 4.5V | ±10V | 1370pF @ 6V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-DSBGA (1x1.5) | 6-UFBGA, DSBGA |
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Texas Instruments |
MOSFET P-CH 8V 3A 6DSBGA |
23.658 |
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NexFET™ | P-Channel | MOSFET (Metal Oxide) | 8V | 3A (Ta) | 1.8V, 4.5V | 19.4mOhm @ 1.5A, 4.5V | 1.1V @ 250µA | 6.3nC @ 4.5V | -6V | 914pF @ 4V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-DSBGA | 6-UFBGA, DSBGA |