Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 118/999
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Nexperia |
MOSFET N-CH 40V MLFPAK |
25.722 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 56A (Tc) | 10V | 10mOhm @ 15A, 10V | 4V @ 1mA | 19.5nC @ 10V | ±20V | 1231pF @ 25V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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ON Semiconductor |
MOSFET N-CH 20V 5.7A MICROFET |
79.548 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 20V | 5.7A (Ta) | 2.5V, 4.5V | 30mOhm @ 5.7A, 4.5V | 1.5V @ 250µA | 12nC @ 4.5V | ±12V | 935pF @ 10V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-WDFN Exposed Pad |
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Vishay Siliconix |
MOSFET N-CH 20V 25A SC-70-6 |
86.196 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 25A (Tc) | 4.5V, 10V | 9.5mOhm @ 9A, 10V | 2.5V @ 250µA | 20nC @ 10V | ±20V | 620pF @ 1V | - | 3.5W (Ta), 19.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Nexperia |
MOSFET N-CH 100V 19A LFPAK |
16.026 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 19A (Tc) | 10V | 65mOhm @ 5A, 10V | 4V @ 1mA | 17.8nC @ 10V | ±20V | 1023pF @ 25V | - | 64W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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ON Semiconductor |
MOSFET N-CH 30V 2.9A MICRO2X2 |
177.084 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 2.9A (Tc) | 2.5V, 4.5V | 123mOhm @ 2.9A, 4.5V | 1.5V @ 250µA | 3nC @ 4.5V | ±12V | 220pF @ 15V | Schottky Diode (Isolated) | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
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Nexperia |
MOSFET N-CH 55V 32.3A DPAK |
56.376 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 32.3A (Tc) | 10V | 37mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 872pF @ 25V | - | 77W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 30V 4.5A TSMT6 |
47.292 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 4.5A (Ta) | 4V, 10V | 38mOhm @ 4.5A, 10V | 2.5V @ 1mA | 9.5nC @ 5V | ±20V | 520pF @ 10V | - | 600mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 30V 52A U8FL |
32.106 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9.3A (Ta) | 4.5V, 10V | 5.9mOhm @ 30A, 10V | 2.2V @ 250µA | 18.2nC @ 10V | ±20V | 1113pF @ 15V | - | 820mW (Ta), 25.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 6A 1206-8 |
50.334 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 6A (Tc) | 4.5V, 10V | 24mOhm @ 4.8A, 10V | 2.3V @ 250µA | 32nC @ 10V | ±25V | 950pF @ 15V | - | 2.5W (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET™ | 8-SMD, Flat Lead |
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Diodes Incorporated |
MOSFET N-CHA 60V 9.2A SO8 |
19.722 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 9.2A (Ta) | 4.5V, 10V | 16mOhm @ 10A, 10V | 2.5V @ 250µA | 18.9nC @ 30V | ±16V | 1103pF @ 30V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Texas Instruments |
12V P-CHANNEL FEMTOFET MOSFET |
133.794 |
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FemtoFET™ | P-Channel | MOSFET (Metal Oxide) | 12V | 5.4A (Ta) | 1.5V, 4.5V | 35mOhm @ 1A, 4.5V | 950mV @ 250µA | 4.2nC @ 4.5V | -6V | 628pF @ 6V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
MOSFET N-CH 30V 5.9A PICOSTAR |
45.432 |
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FemtoFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 5.9A (Ta) | 4.5V, 10V | 27mOhm @ 900mA, 10V | 1.7V @ 250µA | 5.1nC @ 10V | 20V | 380pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
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Infineon Technologies |
MOSFET N-CH 25V 81A DPAK |
20.940 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 81A (Tc) | 4.5V, 10V | 5.7mOhm @ 25A, 10V | 2.35V @ 25µA | 15nC @ 4.5V | ±20V | 1470pF @ 13V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 30V 5A 6SON |
43.104 |
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Automotive, AEC-Q100, NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 5A (Tc) | 3V, 8V | 30mOhm @ 4A, 8V | 1.8V @ 250µA | 2.7nC @ 4.5V | +10V, -8V | 340pF @ 15V | - | 2.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WSON (2x2) | 6-WDFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO252-3 |
51.774 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 13.5mOhm @ 30A, 10V | 2.2V @ 250µA | 10nC @ 10V | ±20V | 1000pF @ 15V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 90A TO252 |
20.850 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 4mOhm @ 24A, 10V | 2.5V @ 250µA | 53nC @ 4.5V | ±20V | 2200pF @ 25V | - | 88W (Tc) | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 50A 5X6 PQFN |
27.810 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta), 120A (Tc) | 4.5V, 10V | 3.1mOhm @ 20A, 10V | 2.35V @ 50µA | 41nC @ 10V | ±20V | 3180pF @ 10V | - | 3.6W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 30V 70A LFPAK33 |
15.906 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 4.3mOhm @ 25A, 10V | 2.2V @ 1mA | 29.3nC @ 10V | ±20V | 1795pF @ 15V | Schottky Diode (Body) | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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Rohm Semiconductor |
MOSFET N-CH 30V 20A 8-HSOP |
21.858 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 4.6mOhm @ 20A, 10V | 2.5V @ 1mA | 16.8nC @ 10V | ±20V | 1080pF @ 15V | - | 3W (Ta), 25.1W (Tc) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 60V LFPAK56 |
48.564 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 53A (Tc) | 5V, 10V | 13mOhm @ 15A, 10V | 2.1V @ 1mA | 33.2nC @ 10V | ±20V | 2603pF @ 25V | - | 95W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 40V MLFPAK |
12.330 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 69A (Tc) | 10V | 8mOhm @ 20A, 10V | 4V @ 1mA | 23.8nC @ 10V | ±20V | 1567pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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Texas Instruments |
MOSFET P-CH 12V 2.2A 4DSBGA |
173.814 |
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NexFET™ | P-Channel | MOSFET (Metal Oxide) | 12V | 2.2A (Ta) | 1.5V, 4.5V | 53mOhm @ 500mA, 4.5V | 900mV @ 250µA | 3.8nC @ 4.5V | -6V | 512pF @ 6V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-DSBGA (1x1) | 4-UFBGA, DSBGA |
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Infineon Technologies |
MOSFET N-CH 60V 30A TO252-3 |
26.226 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4.5V, 10V | 23mOhm @ 30A, 10V | 2.2V @ 10µA | 21nC @ 10V | ±16V | 1560pF @ 25V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 100V 21.7A DPAK |
62.838 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 21.7A (Tc) | 4.5V, 10V | 72mOhm @ 10A, 10V | 2V @ 1mA | - | ±10V | 1690pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 20V 3.7A MLP2X2 |
46.038 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 20V | 3.7A (Ta) | 2.5V, 4.5V | 68mOhm @ 3.7A, 4.5V | 1.5V @ 250µA | 6nC @ 4.5V | ±12V | 455pF @ 10V | Schottky Diode (Isolated) | 1.4W (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 20A 8SOP |
27.234 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Tc) | 10V | 8.9mOhm @ 10A, 10V | 2.3V @ 1mA | 9.8nC @ 10V | ±20V | 820pF @ 15V | - | 1.6W (Ta), 24W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Nexperia |
MOSFET P-CH 250V 0.225A SOT223 |
34.272 |
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- | P-Channel | MOSFET (Metal Oxide) | 250V | 225mA (Ta) | 10V | 15Ohm @ 200mA, 10V | 2.8V @ 1mA | - | ±20V | 90pF @ 25V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 80A TDSON-8 |
263.916 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta), 80A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.2V @ 250µA | 35nC @ 10V | ±20V | 2800pF @ 15V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 30V 100A LFPAK |
78.456 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 4mOhm @ 15A, 10V | 2.15V @ 1mA | 36.6nC @ 10V | ±20V | 2090pF @ 12V | - | 69W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Rohm Semiconductor |
MOSFET P-CH 30V 7.5A 8SOP |
19.602 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | - | 4.5V, 10V | 23.5mOhm @ 7.5A, 10V | 2.5V @ 1mA | 25nC @ 10V | ±20V | 1250pF @ 15V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |