Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 116/999
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 30A 8SOP |
51.312 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 4.2mOhm @ 12A, 10V | 2.5V @ 250µA | 24nC @ 4.5V | ±20V | 2200pF @ 25V | - | 7W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 30V 3.5A TSMT6 |
44.586 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 2.5V, 4.5V | 54mOhm @ 3.5A, 4.5V | 1.5V @ 1mA | 6.4nC @ 4.5V | 12V | 285pF @ 10V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 70A TO252 |
19.764 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 6mOhm @ 20A, 10V | 2.5V @ 250µA | 11.1nC @ 4.5V | ±20V | 1210pF @ 25V | - | 54W (Tc) | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 20V 18.1A POWERDI-8 |
30.990 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 18.1A (Tc) | 2.5V, 4.5V | 4.6mOhm @ 13.5A, 4.5V | 1.2V @ 250µA | 164nC @ 10V | ±12V | 6495pF @ 10V | - | 1.05W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET P-CHANNEL 20V 7.4A 6TSOP |
28.842 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 7.4A (Tc) | 2.5V, 4.5V | 60mOhm @ 4.7A, 4.5V | 1.4V @ 250µA | 10.3nC @ 4.5V | ±12V | 840pF @ 10V | - | 5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET N-CH 40V 15A POWERPAKSO-8 |
27.738 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 15A (Tc) | 4.5V, 10V | 33mOhm @ 7A, 10V | 2.5V @ 250µA | 20nC @ 10V | ±20V | 600pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 2.8A TO252 |
20.616 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.8A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 8nC @ 10V | ±30V | 331pF @ 25V | - | 57W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 0.09A SOT-89 |
34.026 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 90mA (Ta) | 4.5V, 10V | 45Ohm @ 90mA, 10V | 2.3V @ 94µA | 5.8nC @ 10V | ±20V | 131pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT89 | TO-243AA |
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Rohm Semiconductor |
MOSFET P-CH 30V 2.5A TUMT6 |
23.250 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4V, 10V | 75mOhm @ 2.5A, 10V | 2.5V @ 1mA | 5.2nC @ 5V | ±20V | 480pF @ 10V | - | 320mW (Ta) | 150°C (TJ) | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 800V 300MA SOT223 |
26.262 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 300mA (Ta) | 10V | 21.6Ohm @ 150mA, 10V | 5V @ 250µA | 6nC @ 10V | ±30V | 200pF @ 25V | - | 2.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Nexperia |
MOSFET N-CH 55V 18A DPAK |
93.018 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 4.5V, 10V | 69mOhm @ 10A, 10V | 2V @ 1mA | 11nC @ 5V | ±15V | 643pF @ 25V | - | 51W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 37.8A SC70-6 |
173.334 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 37.8A (Tc) | 4.5V, 10V | 8.4mOhm @ 11A, 10V | 2.4V @ 250µA | 16nC @ 4.5V | +20V, -16V | 1290pF @ 15V | - | 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Diodes Incorporated |
MOSFET N-CH 30V 2.4A SOT-23-6 |
287.166 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 2.4A (Ta) | 4.5V, 10V | 120mOhm @ 2.5A, 10V | 1V @ 250µA | 3.9nC @ 10V | ±20V | 190pF @ 25V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Nexperia |
MOSFET N-CH 30V 51A LFPAK |
297.540 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 51A (Tj) | 4.5V, 10V | 7.5mOhm @ 15A, 10V | 2.2V @ 1mA | 11.3nC @ 10V | ±20V | 655pF @ 15V | - | 34W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Diodes Incorporated |
MOSFET N-CH 100V 17A TO252 |
84.876 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 6V, 10V | 80mOhm @ 3.3A, 10V | 3V @ 250µA | 25.2nC @ 10V | ±20V | 1172pF @ 50V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 100V 15A TO252 |
49.818 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Tc) | 4.5V, 10V | 90mOhm @ 5A, 10V | 2.5V @ 250µA | 9.3nC @ 10V | ±20V | 1480pF @ 50V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 20V 11.7A UDFN2020-6 |
93.018 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 11.7A (Ta) | 1.5V, 4.5V | 9.5mOhm @ 7A, 4.5V | 1V @ 250µA | 56nC @ 10V | ±12V | 2248pF @ 10V | - | 610mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 70A TO252 |
48.192 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 6mOhm @ 20A, 10V | 2.5V @ 250µA | 11.1nC @ 4.5V | ±20V | 1160pF @ 25V | - | 54W (Tc) | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 40V 25A CHIPFET |
24.288 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 25A (Tc) | 4.5V, 10V | 7.75mOhm @ 15A, 10V | 2.5V @ 250µA | 20nC @ 4.5V | +20V, -16V | 1765pF @ 20V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® ChipFet Single | PowerPAK® ChipFET™ Single |
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Nexperia |
MOSFET N-CH 60V 34A LFPAK |
259.164 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 34A (Tc) | 5V | 21.5mOhm @ 10A, 10V | 2.1V @ 1mA | 12nC @ 5V | ±10V | 1500pF @ 25V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 60V 34A LFPAK |
13.668 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 34A (Tc) | 10V | 25mOhm @ 10A, 10V | 4V @ 1mA | 16.1nC @ 10V | ±20V | 1043pF @ 25V | - | 64W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 1A TO252 |
79.896 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 1A (Tc) | 10V | 10Ohm @ 500mA, 10V | 4.5V @ 250µA | 6.1nC @ 10V | ±30V | 138pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 80V LFPAK |
17.952 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 15A (Tc) | 5V, 10V | 72mOhm @ 5A, 10V | 2.1V @ 1mA | 7.9nC @ 5V | ±10V | 898pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 9.7A 8SOIC |
58.524 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 9.7A (Ta) | 4.5V, 10V | 20mOhm @ 9.7A, 10V | 2.7V @ 250µA | 32nC @ 10V | ±20V | 1900pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET N-CH 100V LFPAK |
17.922 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 5V | 110mOhm @ 5A, 10V | 2.1V @ 1mA | 8.4nC @ 5V | ±10V | 870pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 30V 3.9A SOT223 |
40.782 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 3.9A (Ta) | 4V, 10V | 45mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | ±16V | 530pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 30V 33A PPAK SO-8 |
23.346 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 33A (Tc) | 4.5V, 10V | 7.5mOhm @ 10A, 10V | 2.4V @ 250µA | 21.5nC @ 10V | +20V, -16V | 1000pF @ 15V | - | 3.3W (Ta), 14.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Nexperia |
MOSFET P-CH 20V 2.7A HUSON6 |
27.480 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.7A (Ta) | 4.5V | 102mOhm @ 2.7A, 4.5V | 1V @ 250µA | 8.6nC @ 4.5V | ±12V | 550pF @ 10V | Schottky Diode (Isolated) | 485mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-HUSON-EP (2x2) | 6-UDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 500V 0.35A TO-92-3 |
18.432 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 350mA (Tc) | 10V | 5.3Ohm @ 175mA, 10V | 3.7V @ 250µA | 8nC @ 10V | ±30V | 230pF @ 25V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 Long Body (Formed Leads) |
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Texas Instruments |
MOSFET N-CH 60V 2.2A PICOSTAR |
13.986 |
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FemtoFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 2.2A (Ta) | 4.5V, 10V | 65mOhm @ 1A, 10V | 2.2V @ 250µA | 14nC @ 10V | ±20V | 777pF @ 30V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |