Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 123/999
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Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N CH 30V 32A PQFN5X6 |
81.012 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 169A (Tc) | 4.5V, 10V | 2.1mOhm @ 20A, 10V | 2.35V @ 100µA | 66nC @ 10V | ±20V | 4960pF @ 10V | - | 3.6W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-TQFN Exposed Pad |
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Rohm Semiconductor |
MOSFET P-CH 12V 7A TSMT8 |
28.278 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 7A (Ta) | 1.5V, 4.5V | 12mOhm @ 7A, 4.5V | 1V @ 1mA | 58nC @ 4.5V | ±10V | 7400pF @ 6V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSMT8 | 8-SMD, Flat Lead |
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Vishay Siliconix |
MOSFET N-CH 20V MICROFOOT |
23.760 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | - | 1.5V, 4.5V | 37mOhm @ 1.5A, 4.5V | 850mV @ 250µA | 16nC @ 8V | ±8V | 620pF @ 10V | - | 780mW (Ta), 1.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-Micro Foot (1x1) | 4-UFBGA |
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Nexperia |
MOSFET N-CH 30V 100A LFPAK |
15.696 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2mOhm @ 25A, 10V | 2.2V @ 1mA | 46nC @ 10V | ±20V | 2969pF @ 15V | - | 142W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 30V 100A 8TDSON |
38.712 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta), 100A (Tc) | 4.5V, 10V | 1.9mOhm @ 30A, 10V | 2.2V @ 250µA | 44nC @ 10V | ±20V | 2800pF @ 15V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 60V LFPAK56 |
30.000 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 5V, 10V | 5.2mOhm @ 25A, 10V | 2.1V @ 1mA | 39.4nC @ 5V | ±20V | 6319pF @ 25V | - | 195W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Diodes Incorporated |
MOSFET PCH 40V 14A TO252 |
20.370 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 40V | 14A (Ta), 45A (Tc) | 4.5V, 10V | 11mOhm @ 9.8A, 10V | 2.5V @ 250µA | 91nC @ 10V | ±25V | 4234pF @ 20V | - | 1.7W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
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Nexperia |
MOSFET N-CH 30V 100A LFPAK |
273.366 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2mOhm @ 15A, 10V | 2.15V @ 1mA | 64nC @ 10V | ±20V | 3980pF @ 12V | - | 97W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 100V 46A 8PDFN |
51.060 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 46A (Tc) | 4.5V, 10V | 16mOhm @ 8A, 10V | 2.5V @ 250µA | 73nC @ 10V | ±20V | 4431pF @ 50V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 30V 75A DPAK |
92.760 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 5V, 10V | 5mOhm @ 25A, 10V | 2V @ 1mA | 31nC @ 5V | ±15V | 3430pF @ 25V | - | 167W (Tc) | -55°C ~ 185°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 75V 70A DPAK |
50.754 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 70A (Tc) | 10V | 14mOhm @ 25A, 10V | 4V @ 1mA | 41nC @ 10V | ±20V | 2612pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 75A POWERPAKSO-8 |
26.436 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 75A (Tc) | 10V | 6.2mOhm @ 10A, 10V | 3.5V @ 250µA | 55nC @ 10V | ±20V | 3500pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Texas Instruments |
MOSFET N-CH 30V 25A 8VSON |
14.412 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta) | 4.5V, 10V | 9.7mOhm @ 8A, 10V | 2V @ 250µA | 15.1nC @ 10V | ±20V | 1030pF @ 15V | - | 3.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 30V 30A D2PAK |
59.658 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 22.6mOhm @ 5A, 10V | 2.15V @ 1mA | 9nC @ 10V | ±20V | 447pF @ 15V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 9.4A DPAK |
22.380 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9.4A (Tc) | 10V | 380mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | ±30V | 560pF @ 25V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 47A 8-SOP |
52.056 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 47A (Tc) | 4.5V, 10V | 3.2mOhm @ 23.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | ±20V | 2100pF @ 15V | - | 1.6W (Ta), 44W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 250V 7.4A DPAK |
22.044 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 7.4A (Tc) | 10V | 420mOhm @ 3.7A, 10V | 5V @ 250µA | 20nC @ 10V | ±30V | 700pF @ 25V | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 100V 20A CPT3 |
53.844 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 20A (Tc) | 4V, 10V | 46mOhm @ 20A, 10V | 2.5V @ 1mA | 55nC @ 10V | ±20V | 2100pF @ 25V | - | 850mW (Ta), 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 20V 14.7A D-PAK |
23.460 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 20V | 14.7A (Ta), 50A (Tc) | 2.5V, 10V | 9mOhm @ 16.2A, 10V | 1.5V @ 250µA | 23nC @ 4.5V | ±12V | 1882pF @ 10V | - | 3.8W (Ta), 44W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 100V 33A DPAK |
54.432 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 33A (Tc) | 4.5V, 10V | 38.6mOhm @ 25A, 10V | 2V @ 1mA | - | ±10V | 3072pF @ 25V | - | 114W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 9A MICROFET2X2 |
193.830 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 19mOhm @ 9A, 10V | 3V @ 250µA | 13nC @ 10V | ±20V | 760pF @ 15V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
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Diodes Incorporated |
MOSFET N-CHA 40V 26A POWERDI |
22.338 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 26A (Ta), 90A (Tc) | 4.5V, 10V | 2.5mOhm @ 50A, 10V | 3V @ 250µA | 82.2nC @ 10V | ±20V | 4508pF @ 20V | - | 2.6W (Ta), 138W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 22.7A DPAK-3 |
48.642 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 22.7A (Tc) | 10V | 45mOhm @ 11.4A, 10V | 4V @ 250µA | 25nC @ 10V | ±25V | 945pF @ 25V | - | 2.5W (Ta), 44W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
42.210 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 14.5mOhm @ 36A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1380pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 20V 20A 8-SOIC |
727.620 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 20A (Tc) | 4.5V, 10V | 6mOhm @ 10A, 10V | 2.1V @ 250µA | 95nC @ 10V | ±16V | 3700pF @ 10V | - | 2.5W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 100V 5.6A DPAK |
17.484 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 20V 35A 1212-8 PPAK |
94.680 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 35A (Tc) | 2.5V, 10V | 4.6mOhm @ 20A, 10V | 1.5V @ 250µA | 177nC @ 10V | ±12V | 5790pF @ 10V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8L |
101.718 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 2.35mOhm @ 15A, 10V | 2.4V @ 250µA | 104nC @ 10V | +20V, -16V | 5300pF @ 20V | - | 36.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Nexperia |
MOSFET N-CH 40V 100A LFPAK |
156.816 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 5V | 2.5mOhm @ 25A, 10V | 2.1V @ 1mA | 35.5nC @ 5V | ±10V | 5962pF @ 25V | - | 194W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Central Semiconductor Corp |
MOSFET N-CH 100V 2A SOT-89 |
22.158 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 2A (Ta) | 4.5V, 10V | 300mOhm @ 2A, 10V | 2.5V @ 250µA | 6nC @ 5V | 20V | 550pF @ 25V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-89 | TO-243AA |