Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 125/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 150V 5.1A 8-SOIC |
105.078 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 5.1A (Ta) | 10V | 43mOhm @ 3.1A, 10V | 5V @ 100µA | 38nC @ 10V | ±20V | 1647pF @ 75V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 100V 36.5A PPAK 1212 |
29.886 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 36.5A (Tc) | 6V, 10V | 21mOhm @ 10A, 10V | 3.5V @ 250µA | 24nC @ 10V | ±20V | 845pF @ 50V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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Microchip Technology |
MOSFET N-CH 300V 0.2A SOT89-3 |
19.062 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 200mA (Tj) | 0V | 12Ohm @ 150mA, 0V | - | - | ±20V | 300pF @ 25V | Depletion Mode | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Nexperia |
MOSFET N-CH 40V 100A LFPAK |
634.884 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 2.8mOhm @ 25A, 10V | 4V @ 1mA | 63nC @ 10V | ±20V | 3776pF @ 12V | - | 131W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET P-CH 150V 8.9A 1212-8 |
43.524 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 8.9A (Tc) | 7.5V, 10V | 315mOhm @ 2.4A, 10V | 4V @ 250µA | 30nC @ 10V | ±30V | 880pF @ 75V | - | 3.8W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Rohm Semiconductor |
MOSFET N-CH 600V 4A CPT3 |
25.482 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 980mOhm @ 1.5A, 10V | 4V @ 1mA | 15nC @ 10V | ±20V | 250pF @ 25V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 25V 28A POWER56 |
24.522 |
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PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 28A (Ta), 49A (Tc) | 4.5V, 10V | 1.95mOhm @ 28A, 10V | 3V @ 1mA | 69nC @ 10V | ±20V | 4515pF @ 13V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 100V 23A D2PAK |
38.898 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 5V, 10V | 72mOhm @ 10A, 10V | 2V @ 1mA | - | ±15V | 1704pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microchip Technology |
MOSFET N-CH 60V 0.23A TO92-3 |
22.440 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Tj) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±30V | 50pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 30V 17A 8DSO |
48.228 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta) | 4.5V, 10V | 3.3mOhm @ 22A, 10V | 2V @ 250µA | 124nC @ 10V | ±20V | 9600pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 500V 5.6A DPAK |
20.310 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 500V | 5.6A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 4.5V @ 50µA | 24.6nC @ 10V | ±30V | 690pF @ 25V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 3.6A 8-SOIC |
28.770 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 3.6A (Ta) | 10V | 90mOhm @ 2.2A, 10V | 5.5V @ 250µA | 41nC @ 10V | ±30V | 990pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
27.402 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 50µA | 60nC @ 10V | ±20V | 1720pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V SO-8 T&R 2 |
19.260 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Ta) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2V @ 250µA | 41.3nC @ 10V | ±20V | 2090pF @ 30V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 120V 35A TO252-3 |
65.214 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 35A (Tc) | 4.5V, 10V | 24mOhm @ 35A, 10V | 2.4V @ 39µA | 39nC @ 10V | ±20V | 2700pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 30V 300A 56LFPAK |
36.948 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 1.24mOhm @ 25A, 10V | 2.2V @ 1mA | 68nC @ 10V | ±20V | 4616pF @ 15V | - | 194W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET N-CH 60V 12A PPAK CHIPFET |
27.648 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 12A (Tc) | 4.5V, 10V | 34mOhm @ 4.6A, 10V | 3V @ 250µA | 32nC @ 10V | ±20V | 1100pF @ 30V | - | 3.1W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerPak® ChipFet (3x1.9) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 100V 6.8A 8-SOIC |
24.984 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 6V, 10V | 63mOhm @ 4.4A, 10V | 4.5V @ 250µA | 20nC @ 10V | ±20V | 600pF @ 50V | - | 2.5W (Ta), 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Texas Instruments |
MOSFET N-CH 30V 60A 8VSON |
22.200 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 4.2mOhm @ 18A, 10V | 1.8V @ 250µA | 35nC @ 10V | ±20V | 2310pF @ 15V | - | 3W (Ta), 53W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 35V 15A DPAK |
143.700 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 35V | 15A (Ta), 59A (Tc) | 4.5V, 10V | 10mOhm @ 15A, 10V | 3V @ 250µA | 36nC @ 10V | ±20V | 1400pF @ 20V | - | 3.8W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 30V 50A |
132.948 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 44A (Tc) | 3V, 8V | 10.3mOhm @ 10A, 8V | 1.8V @ 250µA | 5.1nC @ 4.5V | +10V, -8V | 700pF @ 15V | - | 2.7W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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Texas Instruments |
MOSFET P-CHANNEL 8V 5A 9-DSBGA |
47.196 |
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NexFET™ | P-Channel | MOSFET (Metal Oxide) | 8V | 5A (Ta) | 2.5V, 4.5V | 5.7mOhm @ 2A, 4.5V | 1.05V @ 250µA | 14.6nC @ 4.5V | -6V | 2275pF @ 4V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 9-DSBGA (1.5x1.5) | 9-UFBGA, DSBGA |
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Vishay Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
79.008 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 7.7A (Tc) | 4V, 5V | 270mOhm @ 4.6A, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 400V 500MA SOT-223 |
20.826 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 400V | 500mA (Ta) | 10V | 3Ohm @ 500mA, 10V | 4V @ 1mA | - | ±20V | 400pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 100V 4.2A DPAK-3 |
95.688 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 4.2A (Ta), 5.5A (Tc) | 4.5V, 10V | 104mOhm @ 4.2A, 10V | 3V @ 250µA | 6nC @ 10V | ±20V | 285pF @ 50V | - | 3.1W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 160A D-PAK |
90.504 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 160A (Tc) | 4.5V, 10V | 3.9mOhm @ 35A, 10V | 2.5V @ 250µA | 118nC @ 10V | ±20V | 5160pF @ 15V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 40V 40A PPAK SO-8 |
52.518 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.4V @ 250µA | 75nC @ 10V | ±20V | 2410pF @ 20V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 7A DPAK |
22.512 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 7A (Ta) | 10V | 48mOhm @ 3.5A, 10V | 4V @ 100µA | 7.1nC @ 10V | ±20V | 470pF @ 10V | - | 50W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
40V N-CHANNEL NEXFET POWER MOSF |
24.684 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 89A (Tc) | 4.5V, 10V | 7.9mOhm @ 15A, 10V | 2.4V @ 250µA | 40nC @ 10V | ±20V | 2683pF @ 20V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 125V 60A POWERPAKSO |
24.906 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 125V | 60A (Tc) | 7.5V, 10V | 11.5mOhm @ 20A, 10V | 4.5V @ 250µA | 38nC @ 10V | ±20V | 1410pF @ 75V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |