Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 134/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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STMicroelectronics |
N-CHANNEL 800 V, 1.50 OHM TYP., |
19.422 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Ta) | 10V | 1.75Ohm @ 2A, 10V | 5V @ 100µA | 5nC @ 10V | ±30V | 177pF @ 100V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 60V 65A TO-220 |
21.804 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 65A (Tc) | 10V | 16mOhm @ 32.5A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 2170pF @ 25V | - | 135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V 3.9A TO-220 |
23.424 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.9A (Tc) | 10V | 1.2Ohm @ 2A, 10V | 5V @ 250µA | 16.6nC @ 10V | ±30V | 540pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Nexperia |
MOSFET N-CH 100V 100A D2PAK |
29.052 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 5.6mOhm @ 25A, 10V | 4V @ 1mA | 141nC @ 10V | ±20V | 8061pF @ 50V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 2.5A D2PAK |
13.644 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 17nC @ 10V | ±30V | 340pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
MOSFET N-CH 40V 100A TO220-3 |
15.804 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 4.5mOhm @ 75A, 10V | 2.3V @ 250µA | 36nC @ 10V | ±20V | 3150pF @ 20V | - | 188W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Nexperia |
MOSFET N-CH 100V 100A TO220AB |
40.530 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 12mOhm @ 15A, 10V | 4V @ 1mA | 125nC @ 10V | ±20V | 6686pF @ 50V | - | 269W (Tc) | - | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 97A TO-220AB |
17.784 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 97A (Tc) | 10V | 8.6mOhm @ 58A, 10V | 4V @ 150µA | 116nC @ 10V | ±20V | 4476pF @ 50V | - | 221W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 12A TO-220 |
23.316 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 12A (Ta), 50A (Tc) | 4.5V, 10V | 8.7mOhm @ 14A, 10V | 3V @ 250µA | 49nC @ 10V | ±20V | 2500pF @ 20V | - | 2W (Ta), 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 900V 4A TO-220F |
12.996 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 4A (Tc) | 10V | 4.2Ohm @ 2A, 10V | 5V @ 250µA | 22nC @ 10V | ±30V | 960pF @ 25V | - | 47W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 75V 80A TO263-3 |
22.716 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 4.5V, 10V | 6.8mOhm @ 80A, 10V | 2V @ 250µA | 233nC @ 10V | ±20V | 5400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 80V 100A TO263-3 |
22.056 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 6V, 10V | 3.5mOhm @ 100A, 10V | 3.5V @ 155µA | 117nC @ 10V | ±20V | 8110pF @ 40V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
MOSFET N-CH 80V 94A TO220-3 |
21.444 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Ta) | 6V, 10V | 9.2mOhm @ 60A, 10V | 3.4V @ 250µA | 36nC @ 10V | ±20V | 2730pF @ 40V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V 10A TO-220F |
19.944 |
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UniFET-II™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 5V @ 250µA | 30nC @ 10V | ±25V | 1475pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 800V 5A TO-220 |
13.386 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 5A (Tc) | 10V | 1.15Ohm @ 2.5A, 10V | 5V @ 100µA | 12nC @ 10V | ±30V | 270pF @ 100V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 150V 25A TO252 |
85.806 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 25A (Tc) | 10V | 52mOhm @ 15A, 10V | 4V @ 250µA | 51nC @ 10V | ±20V | 2200pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 18A TO-262 |
23.016 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 150mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1160pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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STMicroelectronics |
MOSFET N-CH 600V TO-220 |
15.252 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 7.5A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 13.5nC @ 10V | ±25V | 400pF @ 100V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 180A TO263-7-3 |
21.876 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 1.1mOhm @ 100A, 10V | 4V @ 180µA | 225nC @ 10V | ±20V | 17940pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO-220AB |
20.196 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 9mOhm @ 60A, 10V | 4V @ 250µA | 93nC @ 10V | ±20V | 2900pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 100V 35A DPAK |
24.048 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 28.5mOhm @ 21A, 10V | 4V @ 50µA | 59nC @ 10V | ±20V | 1690pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 200V 5.2A TO-220AB |
35.238 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 5.2A (Tc) | 4V, 5V | 800mOhm @ 3.1A, 5V | 2V @ 250µA | 16nC @ 5V | ±10V | 360pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 800V 3.9A TO-220 |
15.726 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 800V | 3.9A (Tc) | 10V | 3.6Ohm @ 1.95A, 10V | 5V @ 250µA | 25nC @ 10V | ±30V | 880pF @ 25V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 3.1A TO220FP |
20.028 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 3.1A (Tc) | 10V | 1.5Ohm @ 1.9A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 610pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Nexperia |
MOSFET N-CH 30V 120A D2PAK |
38.418 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 120A (Tc) | 4.5V, 10V | 1.5mOhm @ 25A, 10V | 2.15V @ 1mA | 228nC @ 10V | ±20V | 14934pF @ 15V | - | 401W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 24A TO220FP |
19.794 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 24A (Tc) | 10V | 36mOhm @ 13A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 1900pF @ 25V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 55A D2PAK |
14.472 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 55A (Tc) | 4V, 10V | 26mOhm @ 29A, 10V | 2V @ 250µA | 140nC @ 5V | ±16V | 3700pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 160A TO-220AB |
14.706 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4520pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
T6 40V MOSFET |
26.538 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 46A (Ta), 300A (Tc) | 10V | 0.92mOhm @ 50A, 10V | 3.5V @ 250µA | 86nC @ 10V | ±20V | 6100pF @ 25V | - | 3.9W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Nexperia |
MOSFET N-CH 100V 100A TO-220 |
30.690 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tj) | 10V | 8.5mOhm @ 25A, 10V | 4V @ 1mA | 111nC @ 10V | ±20V | 5512pF @ 50V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |