Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 135/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 55V 51A TO-262 |
13.272 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 1420pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK |
18.114 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 5.5mOhm @ 75A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 3000pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 80V 120A D2PAK |
29.424 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 3mOhm @ 25A, 10V | 4V @ 1mA | 139nC @ 10V | ±20V | 9961pF @ 40V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 600V 15A POWER MOSFET |
25.722 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 290mOhm @ 6.5A, 10V | 5V @ 1mA | 27.5nC @ 10V | ±20V | 1050pF @ 25V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 250V 17A TO-220 |
21.840 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 17A (Tc) | 10V | 100mOhm @ 17A, 10V | 4V @ 54µA | 19nC @ 10V | ±20V | 1500pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 60V 173A TO-220AB |
15.492 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 173A (Tc) | 6V, 10V | 3.3mOhm @ 100A, 10V | 3.7V @ 150µA | 210nC @ 10V | ±20V | 7020pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 800V 6A TO220FP |
105.930 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 900mOhm @ 3.8A, 10V | 3.9V @ 250µA | 41nC @ 10V | ±20V | 785pF @ 100V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 100V 9.7A TO220FP |
14.904 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 9.7A (Tc) | 4V, 5V | 160mOhm @ 5.8A, 5V | 2V @ 250µA | 28nC @ 5V | ±10V | 930pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK |
19.614 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 6450pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 28A D2PAK |
20.736 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | 1700pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 55V 80A D2PAK |
14.004 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 6.5mOhm @ 40A, 10V | 1V @ 250µA | 136nC @ 5V | ±20V | 4850pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 100V 75A TO220AB |
53.118 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 15mOhm @ 25A, 10V | 4V @ 1mA | 90nC @ 10V | ±20V | 4900pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK7 |
30.072 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 4.5V, 10V | 1.4mOhm @ 200A, 10V | 2.5V @ 250µA | 180nC @ 4.5V | ±20V | 10990pF @ 40V | - | 380W (Tc) | - | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Toshiba Semiconductor and Storage |
MOSFET N -CH 600V 30.8A DFN |
24.174 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 109mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | ±30V | 3000pF @ 300V | - | 240W (Tc) | 150°C (TA) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 60V 20A IPAK |
17.376 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | 3V @ 250µA | 46nC @ 10V | ±16V | 1480pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 500V 11A TO-220AB |
14.400 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 520mOhm @ 6.6A, 10V | 4V @ 250µA | 52nC @ 10V | ±30V | 1423pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
MOSFET N-CH 55V 75A TO220AB |
26.694 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 3.7mOhm @ 25A, 10V | 2V @ 1mA | 95.6nC @ 5V | ±15V | 7665pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
17.622 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 7.2mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | ±20V | 3280pF @ 30V | - | 87W (Tc) | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 80V 120A D2PAK |
17.436 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 3.2mOhm @ 30A, 10V | 3.5V @ 250µA | 165nC @ 10V | ±20V | 12000pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 900V 5.7A TO220-3 |
12.780 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 5.7A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 3.5V @ 370µA | 34nC @ 10V | ±20V | 850pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 800V TO-220-3 |
14.940 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Ta) | 10V | 650mOhm @ 5.1A, 10V | 3.9V @ 470µA | 45nC @ 10V | ±20V | 1100pF @ 100V | - | 33W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 75V 120A D2PAK |
15.672 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 6.3mOhm @ 75A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 100V 12A D2PAK |
19.908 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 10V | 300mOhm @ 7.2A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 860pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 90A TO263 |
14.424 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 90A (Tc) | 7.5V, 10V | 15mOhm @ 30A, 10V | 4V @ 250µA | 87nC @ 10V | ±20V | 3120pF @ 100V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 200V 39A TO-220F |
2.000 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 39A (Tc) | 10V | 66mOhm @ 19.5A, 10V | 5V @ 250µA | 49nC @ 10V | ±30V | 2130pF @ 25V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 200V 28A TO-220 |
230.466 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 28A (Tc) | 10V | 82mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | ±30V | 2200pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 27A TO263 |
13.836 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 27A (Tc) | 10V | 160mOhm @ 13.5A, 10V | 4V @ 250µA | 26nC @ 10V | ±30V | 1294pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
MOSFET N-CH 80V 100A TO220 |
12.738 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Ta) | 6V, 10V | 6.6mOhm @ 60A, 10V | 3.2V @ 250µA | 50nC @ 10V | ±20V | 3980pF @ 40V | - | 217W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 10.6A TO220 |
15.972 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | 710pF @ 100V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 200V 11A D2PAK |
17.892 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |