Microsemi Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerMicrosemi Corporation
Datensätze 611
Seite 4/21
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Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Microsemi |
GEN2 SIC MOSFET 1200V 40MOHM SOT |
5.760 |
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- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 53A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.8V @ 1mA | 137nC @ 20V | +25V, -10V | 1990pF @ 1000V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 (ISOTOP®) | SOT-227-4, miniBLOC |
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Microsemi |
GEN2 SIC MOSFET 1200V 25MOHM TO- |
5.778 |
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- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 103A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | +25V, -10V | 3020pF @ 1000V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi |
GEN2 SIC MOSFET 1200V 25MOHM D3P |
3.562 |
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- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 100A | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
GEN2 SIC MOSFET 1200V 25MOHM SOT |
8.982 |
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- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 77A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | +25V, -10V | 3020pF @ 1000V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 (ISOTOP®) | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1000V 7A TO-247 |
5.238 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 7A (Tc) | 10V | 2Ohm @ 4A, 10V | 5V @ 500µA | 58nC @ 10V | ±30V | 1800pF @ 25V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 600V 18A TO-247 |
3.924 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 390mOhm @ 9A, 10V | 5V @ 1mA | 90nC @ 10V | ±30V | 3550pF @ 25V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 800V 12A TO-247 |
4.086 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 12A (Tc) | 10V | 900mOhm @ 6A, 10V | 5V @ 1mA | 80nC @ 10V | ±30V | 2471pF @ 25V | - | 337W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 1000V 9A TO-247 |
3.510 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 9A (Tc) | 10V | 1.6Ohm @ 5A, 10V | 5V @ 1mA | 80nC @ 10V | ±30V | 2606pF @ 25V | - | 337W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 500V 30A D3PAK |
6.732 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 190mOhm @ 14A, 10V | 5V @ 1mA | 115nC @ 10V | ±30V | 4525pF @ 25V | - | 415W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 1200V 8A D3PAK |
6.336 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 8A (Tc) | 10V | 2.1Ohm @ 3A, 10V | 5V @ 1mA | 80nC @ 10V | ±30V | 2565pF @ 25V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microsemi |
MOSFET N-CH 1000V 14A TO-247 |
4.590 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 14A (Tc) | 10V | 900mOhm @ 7A, 10V | 5V @ 1mA | 120nC @ 10V | ±30V | 3965pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 800V 18A TO-247 |
6.210 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 18A (Tc) | 10V | 580mOhm @ 9A, 10V | 5V @ 1mA | 122nC @ 10V | ±30V | 3757pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 1000V 14A TO-247 |
7.254 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 14A (Tc) | 10V | 980mOhm @ 7A, 10V | 5V @ 1mA | 120nC @ 10V | ±30V | 3965pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 500V 37A D3PAK |
8.802 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 37A (Tc) | 10V | 150mOhm @ 18A, 10V | 5V @ 1mA | 145nC @ 10V | ±30V | 5710pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 500V 22A TO-247 |
6.138 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 240mOhm @ 11A, 10V | 5V @ 1mA | 43nC @ 10V | ±30V | 1900pF @ 25V | - | 265W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 800V 25A TO-247 |
2.088 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 25A (Tc) | 10V | 390mOhm @ 12A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | 4595pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 800V 22A D3PAK |
5.454 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 23A (Tc) | 10V | 430mOhm @ 12A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | 4595pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 800V 34A TO-264 |
3.636 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 34A (Tc) | 10V | 145mOhm @ 22A, 10V | 3.9V @ 2mA | 355nC @ 10V | ±20V | 4510pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 200V 56A TO-247 |
3.400 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 200V | 56A (Tc) | 10V | 45mOhm @ 500mA, 10V | 4V @ 1mA | 195nC @ 10V | ±30V | 4860pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 300V 40A TO-247 |
3.816 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 300V | 40A (Tc) | 10V | 85mOhm @ 500mA, 10V | 4V @ 1mA | 195nC @ 10V | ±30V | 4950pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 500V 42A D3PAK |
8.190 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 42A (Tc) | 10V | 130mOhm @ 21A, 10V | 5V @ 1mA | 170nC @ 10V | ±30V | 6810pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 500V 56A T-MAX |
8.478 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220nC @ 10V | ±30V | 8800pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 1200V 14A D3PAK |
6.984 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 14A (Tc) | 10V | 1.2Ohm @ 7A, 10V | 5V @ 1mA | 145nC @ 10V | ±30V | 4765pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 800V 25A D3PAK |
5.724 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 25A (Tc) | 10V | 390mOhm @ 12A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | 4595pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microsemi |
MOSFET N-CH 200V 67A D3PAK |
6.570 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 200V | 67A (Tc) | 10V | 38mOhm @ 33.5A, 10V | 4V @ 1mA | 225nC @ 10V | ±30V | 6120pF @ 25V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microsemi |
MOSFET N-CH 200V 56A TO-247 |
2.232 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 200V | 56A (Tc) | 10V | 45mOhm @ 500mA, 10V | 4V @ 1mA | 195nC @ 10V | ±30V | 4860pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 600V 36A TO-247 |
6.552 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 36A (Tc) | 10V | 190mOhm @ 17A, 10V | 5V @ 1mA | 165nC @ 10V | ±30V | 6640pF @ 25V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 600V 45A T-MAX |
4.698 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 45A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215nC @ 10V | ±30V | 8590pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 600V 45A TO-264 |
4.014 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 45A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215nC @ 10V | ±30V | 8590pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 500V 56A TO-264 |
3.204 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220nC @ 10V | ±30V | 8800pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |