Microsemi Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerMicrosemi Corporation
Datensätze 611
Seite 7/21
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Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Microsemi |
MOSFET N-CH 1200V 22A TO-264 |
6.462 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1200V | 22A (Tc) | 10V | 570mOhm @ 11A, 10V | 5V @ 2.5mA | 185nC @ 10V | ±30V | 5155pF @ 25V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 800V 31A SOT-227 |
8.478 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 31A (Tc) | 10V | 210mOhm @ 24A, 10V | 5V @ 2.5mA | 303nC @ 10V | ±30V | 9326pF @ 25V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 600V 50A SOT-227 |
8.442 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 45mOhm @ 22.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | ±20V | 6800pF @ 25V | - | 290W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1000V 23A SOT-227 |
6.318 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 23A (Tc) | 10V | 380mOhm @ 18A, 10V | - | 305nC @ 10V | ±30V | 9835pF @ 25V | - | 545W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1200V 19A SOT-227 |
8.262 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 19A (Tc) | 10V | 530mOhm @ 14A, 10V | 5V @ 2.5mA | 300nC @ 10V | ±30V | 9670pF @ 25V | - | 545W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1000V 23A SP1 |
4.392 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 23A (Tc) | 10V | 396mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | 7868pF @ 25V | - | 390W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET N-CH 1000V 23A SP1 |
4.698 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 23A (Tc) | 10V | 396mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | 7868pF @ 25V | - | 390W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET N-CH 300V 70A SOT-227 |
6.174 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 300V | 70A (Tc) | 10V | 40mOhm @ 500mA, 10V | 4V @ 2.5mA | 425nC @ 10V | ±30V | 10200pF @ 25V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 600V 73A TO-264MAX |
7.542 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 600V | 73A (Tc) | 10V | 75mOhm @ 36.5A, 10V | 5V @ 5mA | 195nC @ 10V | ±30V | 8930pF @ 25V | - | 893W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 264 MAX™ [L2] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 1000V 25A SOT-227 |
8.010 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1000V | 25A (Tc) | 10V | 350mOhm @ 14A, 10V | 5V @ 2.5mA | 186nC @ 10V | ±30V | 5185pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 58A T-MAX |
7.794 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 58A (Tc) | 15V | 90mOhm @ 29A, 12V | 4V @ 2.5mA | - | ±30V | 9000pF @ 25V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 500V 100A SOT-227 |
4.122 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 103A (Tc) | 10V | 38mOhm @ 75A, 10V | 5V @ 5mA | 620nC @ 10V | ±30V | 24600pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 71A SOT-227 |
6.984 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 71A (Tc) | 10V | 50mOhm @ 35.5A, 10V | 5V @ 5mA | 200nC @ 10V | ±30V | 10550pF @ 25V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 600V 49A T-MAX |
2.358 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 49A (Tc) | 12V | 125mOhm @ 24.5A, 12V | 4V @ 2.5mA | - | ±30V | 9000pF @ 25V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 1200V 31A SP1 |
7.470 |
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- | N-Channel | MOSFET (Metal Oxide) | 1200V | 31A (Tc) | 10V | 360mOhm @ 25A, 10V | 5V @ 2.5mA | 560nC @ 10V | ±30V | 14560pF @ 25V | - | 657W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET N-CH 600V 49A TO-264 |
3.546 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 49A (Tc) | 12V | 125mOhm @ 24.5A, 12V | 4V @ 2.5mA | - | ±30V | 9000pF @ 25V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 1200V 33A SOT-227 |
3.726 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 33A (Tc) | 10V | 320mOhm @ 25A, 10V | 5V @ 2.5mA | 560nC @ 10V | ±30V | 18200pF @ 25V | - | 960W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 600V 84A SOT-227 |
3.294 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 84A (Tc) | 10V | 55mOhm @ 60A, 10V | 5V @ 5mA | 600nC @ 10V | ±30V | 24000pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 103A SOT227 |
4.572 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 103A (Tc) | 10V | 36mOhm @ 75A, 10V | 5V @ 5mA | 620nC @ 10V | ±30V | 24600pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 600V 84A SOT-227 |
8.838 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 84A (Tc) | 10V | 55mOhm @ 60A, 10V | 5V @ 2.5mA | 598nC @ 10V | ±30V | 23994pF @ 25V | - | 961W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 600V 95A SP1 |
5.184 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 95A (Tc) | 10V | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | ±20V | 14400pF @ 25V | - | 462W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET N-CH 600V 58A SOT-227 |
2.376 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 600V | 58A (Tc) | 10V | 75mOhm @ 29A, 10V | 5V @ 5mA | 195nC @ 10V | ±30V | 8930pF @ 25V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 200V 175A SOT-227 |
2.772 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 200V | 175A (Tc) | 10V | 11mOhm @ 500mA, 10V | 4V @ 5mA | 180nC @ 10V | ±30V | 21600pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 300V 130A SOT-227 |
7.416 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 300V | 130A (Tc) | 10V | 19mOhm @ 500mA, 10V | 4V @ 5mA | 975nC @ 10V | ±30V | 21600pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 300V 130A SOT-227 |
5.940 |
|
POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 300V | 130A (Tc) | 10V | 19mOhm @ 500mA, 10V | 4V @ 5mA | 975nC @ 10V | ±30V | 21600pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
Microsemi |
MOSFET N-CH 200V 175A SOT-227 |
2.322 |
|
POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 200V | 175A (Tc) | 10V | 11mOhm @ 500mA, 10V | 4V @ 5mA | 180nC @ 10V | ±30V | 21600pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 600V 62A SOT-227 |
7.956 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 600V | 62A (Tc) | 10V | 75mOhm @ 500mA, 10V | 4V @ 5mA | 1050nC @ 10V | ±30V | 19800pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
Microsemi |
MOSFET N-CH 1000V 43A SP4 |
3.276 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 43A (Tc) | 10V | 210mOhm @ 21.5A, 10V | 5V @ 5mA | 372nC @ 10V | ±30V | 10400pF @ 25V | - | 780W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
|
|
Microsemi |
MOSFET N-CH 200V 208A SP4 |
3.114 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 208A (Tc) | 10V | 10mOhm @ 104A, 10V | 5V @ 5mA | 280nC @ 10V | ±30V | 14400pF @ 25V | - | 781W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
|
|
Microsemi |
MOSFET N-CH 200V 208A SP4 |
8.550 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 208A (Tc) | 10V | 10mOhm @ 104A, 10V | 5V @ 5mA | 280nC @ 10V | ±30V | 14400pF @ 25V | - | 781W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |