Microsemi Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerMicrosemi Corporation
Datensätze 611
Seite 10/21
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Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Microsemi |
MOSFET N-CH 300V 48A D3PAK |
4.194 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 300V | 48A (Tc) | 10V | 70mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | ±30V | 5870pF @ 25V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3 [S] | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 300V 40A TO-247 |
4.194 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 300V | 40A (Tc) | 10V | 85mOhm @ 500mA, 10V | 4V @ 1mA | 195nC @ 10V | ±30V | 4950pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 300V 40A D3PAK |
7.992 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 40A (Tc) | - | 85mOhm @ 500mA, 10V | - | 195nC @ 10V | - | 4950pF @ 25V | - | - | - | Surface Mount | D3 [S] | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 1000V 32A T-MAX |
8.820 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 32A (Tc) | 10V | 380mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8500pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 600V 31A TO-247 |
4.068 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 100mOhm @ 18A, 10V | 3.9V @ 1.2mA | 85nC @ 10V | ±30V | 3055pF @ 25V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi |
MOSFET N-CH 800V 31A SOT-227 |
8.082 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 31A (Tc) | 10V | 145mOhm @ 22A, 10V | 3.9V @ 2mA | 355nC @ 10V | ±20V | 4510pF @ 25V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 800V 33A SOT-227 |
3.492 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 33A (Tc) | 10V | 190mOhm @ 24A, 10V | 5V @ 2.5mA | 303nC @ 10V | ±30V | 9326pF @ 25V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 600V 34A TO-247 |
3.114 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 210mOhm @ 17A, 10V | 5V @ 1mA | 165nC @ 10V | ±30V | 6640pF @ 25V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi |
MOSFET N-CH 400V 93A SOT-227 |
2.628 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 400V | 93A (Tc) | 10V | 35mOhm @ 46.5A, 10V | 4V @ 5mA | 1065nC @ 10V | ±30V | 20160pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 400V 53A SOT-227 |
2.808 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 400V | 53A (Tc) | 10V | 70mOhm @ 26.5A, 10V | 4V @ 2.5mA | 495nC @ 10V | ±30V | 8890pF @ 25V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 400V 57A TO-264 |
8.352 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 400V | 57A (Tc) | 10V | 70mOhm @ 500mA, 10V | 4V @ 2.5mA | 495nC @ 10V | ±30V | 8890pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 800V 43A TO-264 |
3.654 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 43A (Tc) | 10V | 210mOhm @ 20A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8070pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 1000V 45A SOT-227 |
6.408 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 45A (Tc) | 10V | 180mOhm @ 33A, 10V | 5V @ 2.5mA | 570nC @ 10V | ±30V | 18500pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1200V 4A TO-220 |
5.688 |
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- | N-Channel | MOSFET (Metal Oxide) | 1200V | 4A (Tc) | 10V | 4.6Ohm @ 2A, 10V | 5V @ 500µA | 43nC @ 10V | ±30V | 1385pF @ 25V | - | 225W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Microsemi |
MOSFET N-CH 1200V 5A TO220 |
3.816 |
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- | N-Channel | MOSFET (Metal Oxide) | 1200V | 5A (Tc) | 10V | 4Ohm @ 2A, 10V | 5V @ 1mA | 43nC @ 10V | ±30V | 1385pF @ 25V | - | 225W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 [K] | TO-220-3 |
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Microsemi |
MOSFET N-CH 500V 30A TO-247 |
3.726 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 160mOhm @ 15A, 10V | 5V @ 1mA | 72nC @ 10V | ±30V | 2833pF @ 25V | - | 329W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 500V 27A TO-247 |
5.058 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 27A (Tc) | 10V | 180mOhm @ 13.5A, 10V | 5V @ 1mA | 58nC @ 10V | ±30V | 2596pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 500V 26A D3PAK |
6.156 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 200mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | - | 4440pF @ 25V | - | - | - | Surface Mount | D3 [S] | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 500V 58A T-MAX |
2.574 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 500V | 58A (Tc) | 10V | 80mOhm @ 29A, 10V | 4V @ 2.5mA | 423nC @ 10V | - | 8797pF @ 25V | - | - | - | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 550V 44A SOT-227 |
6.588 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 550V | 44A (Tc) | 10V | 100mOhm @ 22A, 10V | 5V @ 2.5mA | 124nC @ 10V | ±30V | 5823pF @ 25V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 550V 31A TO-247 |
2.358 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 550V | 31A (Tc) | 10V | 180mOhm @ 15.5A, 10V | 5V @ 1mA | 67nC @ 10V | ±30V | 3286pF @ 25V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi |
MOSFET N-CH 550V 77A SOT-227 |
4.860 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 550V | 77A (Tc) | 10V | 50mOhm @ 38.5A, 10V | 5V @ 5mA | 265nC @ 10V | ±30V | 12400pF @ 25V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 550V 63A SOT-227 |
6.768 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 550V | 63A (Tc) | 10V | 65mOhm @ 31.5A, 10V | 5V @ 5mA | 205nC @ 10V | ±30V | 9165pF @ 25V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 58A SOT-227 |
6.246 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340nC @ 10V | ±30V | 13500pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1000V 5A TO-220 |
8.010 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 5A (Tc) | 10V | 2.8Ohm @ 3A, 10V | 5V @ 500µA | 43nC @ 10V | ±30V | 1409pF @ 25V | - | 225W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 [K] | TO-220-3 |
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Microsemi |
MOSFET N-CH 600V 35A T-MAX |
3.168 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 170mOhm @ 17.5A, 10V | 5V @ 2.5mA | 100nC @ 10V | ±30V | 4500pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 600V 62A SOT-227 |
5.526 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 600V | 62A (Tc) | 10V | 75mOhm @ 31A, 10V | 4V @ 5mA | 1050nC @ 10V | ±30V | 19800pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 600V 73A TO-264MAX |
6.426 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 600V | 73A (Tc) | 10V | 75mOhm @ 36.5A, 10V | 5V @ 5mA | 195nC @ 10V | ±30V | 8930pF @ 25V | - | 893W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 264 MAX™ [L2] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 600V 55A SOT-227 |
8.874 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 600V | 55A (Tc) | 10V | 80mOhm @ 500mA, 10V | 4V @ 5mA | 870nC @ 10V | ±30V | 14500pF @ 25V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 600V 65A TO-264MAX |
5.184 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 600V | 65A (Tc) | 10V | 80mOhm @ 32.5A, 10V | 4V @ 5mA | 590nC @ 10V | ±30V | 13300pF @ 25V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 264 MAX™ [L2] | TO-264-3, TO-264AA |