Microsemi Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerMicrosemi Corporation
Datensätze 611
Seite 9/21
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Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Microsemi |
MOSFET N-CH 1000V 4A TO-247 |
2.100 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1000V | 4A (Tc) | 10V | 3Ohm @ 2A, 10V | 5V @ 1mA | 34nC @ 10V | ±30V | 694pF @ 25V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 1000V 4A TO-220 |
5.994 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1000V | 4A (Tc) | 10V | 3Ohm @ 2A, 10V | 5V @ 1mA | 34nC @ 10V | ±30V | 694pF @ 25V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 [K] | TO-220-3 |
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Microsemi |
MOSFET N-CH 1000V 23A T-MAX |
8.982 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1000V | 23A (Tc) | 10V | 450mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154nC @ 10V | ±30V | 4350pF @ 25V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 100V 100A T-MAX |
8.424 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 9mOhm @ 50A, 10V | 4V @ 2.5mA | 350nC @ 10V | ±30V | 9875pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 100V 100A T-MAX |
5.400 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 11mOhm @ 500mA, 10V | 4V @ 2.5mA | 450nC @ 10V | ±30V | 10300pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 800V 11A TO-220 |
8.280 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 450mOhm @ 7.1A, 10V | 3.9V @ 680µA | 60nC @ 10V | ±20V | 1585pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 [K] | TO-220-3 |
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Microsemi |
MOSFET N-CH 1200V 30A SOT-227 |
5.453 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1200V | 30A (Tc) | 10V | 330mOhm @ 15A, 10V | 5V @ 5mA | 365nC @ 10V | ±30V | 9480pF @ 25V | - | 690AW (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1200V 3.5A TO-220 |
2.700 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1200V | 3.5A (Tc) | 10V | 4.7Ohm @ 1.75A, 10V | 5V @ 1mA | 31nC @ 10V | ±30V | 715pF @ 25V | - | 135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 [K] | TO-220-3 |
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Microsemi |
MOSFET N-CH 600V 12A TO-220 |
4.230 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 620mOhm @ 6A, 10V | 5V @ 500µA | 55nC @ 10V | ±30V | 2200pF @ 25V | - | 225W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 [K] | TO-220-3 |
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Microsemi |
MOSFET N-CH 800V 13A TO-247 |
3.240 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 13A (Tc) | 10V | 800mOhm @ 6A, 10V | 5V @ 1mA | 80nC @ 10V | ±30V | 2470pF @ 25V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 1400V 23A SOT-227 |
4.230 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 1400V | 23A (Tc) | 10V | 500mOhm @ 11.5A, 10V | 4V @ 5mA | 820nC @ 10V | ±30V | 13500pF @ 25V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 15A TO-220 |
8.784 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 15A (Tc) | - | 390mOhm @ 7A, 10V | 5V @ 500µA | 55nC @ 10V | - | 2250pF @ 25V | - | 223W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 [K] | TO-220-3 |
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Microsemi |
MOSFET N-CH 600V 15A TO-247 |
6.948 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 430mOhm @ 7A, 10V | 5V @ 500µA | 72nC @ 10V | ±30V | 2882pF @ 25V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 800V 17A TO-247 |
2.232 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 90nC @ 10V | ±20V | 2250pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi |
MOSFET N-CH 800V 17A D3PAK |
5.112 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 90nC @ 10V | ±20V | 2250pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 500V 20A TO-247 |
3.024 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 300mOhm @ 10A, 10V | 5V @ 500µA | 75nC @ 10V | ±30V | 2950pF @ 25V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 200V 112A SOT-227 |
5.022 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 200V | 112A (Tc) | 10V | 19mOhm @ 500mA, 10V | 4V @ 1mA | 495nC @ 10V | ±30V | 11640pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 200V 100A T-MAX |
2.682 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 200V | 100A (Tc) | 10V | 22mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | ±30V | 10200pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 200V 100A T-MAX |
8.730 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 200V | 100A (Tc) | 10V | 22mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | ±30V | 10200pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 200V 67A TO-247 |
8.496 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 200V | 67A (Tc) | 10V | 38mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | ±30V | 6120pF @ 25V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 200V 67A D3PAK |
5.688 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 200V | 67A (Tc) | 10V | 38mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | ±30V | 6120pF @ 25V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3 [S] | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 600V 20.7A TO-247 |
3.546 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | ±20V | 2440pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi |
MOSFET N-CH 600V 20.7A D3PAK |
5.382 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | ±20V | 2440pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 1200V 23A T-MAX |
6.174 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 23A (Tc) | 10V | 700mOhm @ 12A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8370pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 1200V 23A TO264 |
4.788 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 23A (Tc) | 10V | 700mOhm @ 12A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8370pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 600V 23A TO-247 |
8.262 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 290mOhm @ 11A, 10V | 5V @ 1mA | 110nC @ 10V | ±30V | 4415pF @ 25V | - | 415W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 1200V 27A TO-264 |
6.030 |
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- | N-Channel | MOSFET (Metal Oxide) | 1200V | 27A (Tc) | 10V | 650mOhm @ 14A, 10V | 5V @ 2.5mA | 300nC @ 10V | ±30V | 9670pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 600V 28A TO-247 |
3.240 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 250mOhm @ 14A, 10V | 5V @ 1mA | 140nC @ 10V | ±30V | 5575pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 1000V 30A TO264 |
2.718 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 30A (Tc) | 10V | 460mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8500pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 300V 76A T-MAX |
6.318 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 300V | 76A (Tc) | - | 40mOhm @ 500mA, 10V | 4V @ 2.5mA | 425nC @ 10V | - | 10200pF @ 25V | - | - | - | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |