Microsemi Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerMicrosemi Corporation
Datensätze 611
Seite 5/21
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Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Microsemi |
MOSFET N-CH 200V 67A TO-247 |
6.156 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 200V | 67A (Tc) | 10V | 38mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | ±30V | 6120pF @ 25V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 650V 47A TO-247 |
2.826 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 260nC @ 10V | ±20V | 7015pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 600V 77A D3PAK |
4.788 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 77A (Tc) | 10V | 41mOhm @ 44.4A, 10V | 3.6V @ 2.96mA | 260nC @ 10V | ±20V | 13600pF @ 25V | Super Junction | 481W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microsemi |
MOSFET N-CH 500V 35A TO-247 |
6.372 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 35A (Tc) | 10V | 140mOhm @ 17.5A, 10V | 5V @ 1mA | 72nC @ 10V | ±30V | 3261pF @ 25V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 600V 45A TO-264 |
5.112 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 45A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215nC @ 10V | ±30V | 8590pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 300V 48A TO-247 |
5.328 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 300V | 48A (Tc) | 10V | 70mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | ±30V | 5870pF @ 25V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 650V 47A TO-247 |
3.114 |
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- | - | - | - | - | 10V | - | - | - | ±20V | - | - | 417W (Tc) | -55°C ~ 150°C (TJ) | - | - | - |
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Microsemi |
MOSFET N-CH 600V 56A TO-264 |
8.766 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 130mOhm @ 28A, 10V | 5V @ 2.5mA | 280nC @ 10V | ±30V | 11300pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 500V 35A D3PAK |
8.460 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 35A (Tc) | 10V | 140mOhm @ 17.5A, 10V | 5V @ 1mA | 72nC @ 10V | ±30V | 3261pF @ 25V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3 [S] | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 600V 56A T-MAX |
6.084 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 130mOhm @ 28A, 10V | 5V @ 2.5mA | 280nC @ 10V | ±30V | 11300pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 500V 75A TO-264 |
8.658 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 75A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290nC @ 10V | ±30V | 11600pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 500V 75A TO-247 |
2.034 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 75A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290nC @ 10V | ±30V | 11600pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 600V 60A TO-264 |
2.448 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 110mOhm @ 28A, 10V | 5V @ 2.5mA | 280nC @ 10V | ±30V | 11300pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 500V 46A T-MAX |
6.048 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 46A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 95nC @ 10V | ±30V | 4360pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 600V 60A D3PAK |
7.956 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.9V @ 3mA | 190nC @ 10V | ±30V | 7200pF @ 25V | Super Junction | 431W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microsemi |
MOSFET N-CH 800V 43A T-MAX |
5.652 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 43A (Tc) | 10V | 210mOhm @ 20A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8070pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 650V 97A TO-264 |
4.140 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 97A (Tc) | 10V | 41mOhm @ 48.5A, 10V | 3.5V @ 2.96mA | 300nC @ 10V | ±20V | 7650pF @ 25V | - | 862W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 800V 41A T-MAX |
2.124 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 41A (Tc) | 10V | 240mOhm @ 20A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8070pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 1200V 24A TO-264 |
5.472 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 24A (Tc) | 10V | 680mOhm @ 12A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8370pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 600V 70A TO-264 |
2.052 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 190mOhm @ 33A, 10V | 5V @ 2.5mA | 330nC @ 10V | ±30V | 13190pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 600V 66A T-MAX |
8.586 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 100mOhm @ 33A, 10V | 5V @ 2.5mA | 330nC @ 10V | ±30V | 13190pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 600V 70A TO-264 |
7.380 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 90mOhm @ 33A, 10V | 5V @ 2.5mA | 330nC @ 10V | ±30V | 13190pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 800V 48A T-MAX |
8.046 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 49A (Tc) | 10V | 190mOhm @ 24A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | 9330pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 200V 100A TO-264 |
8.064 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 200V | 100A (Tc) | 10V | 22mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | ±30V | 10200pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 600V 60A D3PAK |
4.032 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.9V @ 3mA | 190nC @ 10V | ±30V | 7200pF @ 25V | Super Junction | 431W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microsemi |
MOSFET N-CH 800V 44A TO-264 |
5.274 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 47A (Tc) | 10V | 240mOhm @ 24A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | 9330pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 650V 95A T-MAX |
4.878 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 95A (Tc) | 10V | 35mOhm @ 35.2A, 10V | 3.5V @ 3.5mA | 320nC @ 10V | ±20V | 8140pF @ 25V | Super Junction | 833W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 200V 100A TO-264 |
5.670 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 200V | 100A (Tc) | 10V | 22mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | ±30V | 10200pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 1200V 9A TO-247 |
3.834 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1200V | 9A (Tc) | 10V | 1.5Ohm @ 4.5A, 10V | 5V @ 1mA | 75nC @ 10V | ±30V | 2030pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 1000V 35A T-MAX |
5.976 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 35A (Tc) | 10V | 380mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | 9835pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |