Microsemi Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerMicrosemi Corporation
Datensätze 611
Seite 3/21
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Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Microsemi |
MOSFET N-CH 200V 67A D3PAK |
2.178 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 200V | 67A (Tc) | 10V | 38mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | ±30V | 6120pF @ 25V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3 [S] | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 600V 106A TO-247 |
7.146 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 106A (Tc) | 10V | 35mOhm @ 53A, 10V | 3.5V @ 3.4mA | 308nC @ 10V | ±20V | 8390pF @ 25V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 500V 46A TO-264 |
4.392 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 46A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 95nC @ 10V | ±30V | 4360pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 1000V 32A TO264 |
6.336 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 32A (Tc) | 10V | 400mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8500pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 800V 41A TO-264 |
8.514 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 41A (Tc) | 10V | 240mOhm @ 20A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8070pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 800V 48A TO-264 |
7.686 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 49A (Tc) | 10V | 200mOhm @ 24A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | 9330pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 900V 36A TO-247 |
3.834 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 36A (Tc) | 10V | 120mOhm @ 18A, 10V | 3.5V @ 2.9mA | 252nC @ 10V | ±20V | 7463pF @ 25V | Super Junction | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 1200V 29A T-MAX |
3.762 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 29A (Tc) | 10V | 560mOhm @ 14A, 10V | 5V @ 2.5mA | 300nC @ 10V | ±30V | 9670pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 1000V 21A SOT-227 |
3.618 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1000V | 21A (Tc) | 10V | 450mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154nC @ 10V | ±30V | 4350pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 600V 70A SOT-227 |
6.966 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 60mOhm @ 35A, 10V | 5V @ 5mA | 289nC @ 10V | ±30V | 12630pF @ 25V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 37A TO-247 |
5.976 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 37A (Tc) | 10V | 150mOhm @ 18A, 10V | 5V @ 1mA | 145nC @ 10V | ±30V | 5710pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 800V 19A TO-247 |
7.236 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 19A (Tc) | 10V | 530mOhm @ 9A, 10V | 5V @ 1mA | 120nC @ 10V | ±30V | 3760pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 1000V 18A TO-247 |
6.642 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 18A (Tc) | 10V | 700mOhm @ 9A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | 4845pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 600V 77A TO-247 |
5.796 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 77A (Tc) | 10V | 41mOhm @ 44.4A, 10V | 3.6V @ 2.96mA | 260nC @ 10V | ±20V | 13600pF @ 25V | Super Junction | 481W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
MOSFET N-CH 500V 75A TO-264 |
8.370 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 75A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290nC @ 10V | ±30V | 11600pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 500V 46A T-MAX |
4.392 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 46A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 95nC @ 10V | ±30V | 4360pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 500V 51A SOT-227 |
4.212 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 51A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290nC @ 10V | ±30V | 11600pF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 600V 42A SOT-227 |
6.156 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 42A (Tc) | 10V | 110mOhm @ 28A, 10V | 5V @ 2.5mA | 280nC @ 10V | ±30V | 11300pF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 100V 142A SOT227 |
4.716 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 142A (Tc) | 10V | 11mOhm @ 71A, 10V | 4V @ 2.5mA | 300nC @ 10V | ±30V | 8600pF @ 25V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1000V 25A SOT-227 |
4.122 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 25A (Tc) | 10V | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | 9835pF @ 25V | - | 545W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1200V 18A SOT-227 |
3.472 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 18A (Tc) | 10V | 580mOhm @ 14A, 10V | 5V @ 2.5mA | 300nC @ 10V | ±30V | 9670pF @ 25V | - | 545W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 600V 40A SOT-227 |
5.796 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 40A (Tc) | 10V | 70mOhm @ 20A, 10V | 3.9V @ 1mA | 259nC @ 10V | ±20V | 7015pF @ 25V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 800V 58A SOT-227 |
6.372 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 60A | 10V | 110mOhm @ 43A, 10V | 5V @ 5mA | 570nC @ 10V | ±30V | 17550pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1200V 34A SOT-227 |
3.816 |
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- | N-Channel | MOSFET (Metal Oxide) | 1200V | 35A (Tc) | 10V | 300mOhm @ 25A, 10V | 5V @ 2.5mA | 560nC @ 10V | ±30V | 18200pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1000V 37A SOT-227 |
8.874 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1000V | 37A (Tc) | 10V | 210mOhm @ 18.5A, 10V | 5V @ 5mA | 395nC @ 10V | ±30V | 9750pF @ 25V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
GEN2 SIC MOSFET 1200V 280MOHM TO |
4.266 |
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- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 9.4A (Tc) | 20V | 350mOhm @ 5A, 20V | 2.8V @ 1mA | 20nC @ 20V | +25V, -10V | 300pF @ 1000V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi |
GEN2 SIC MOSFET 1200V 280MOHM D3 |
2.952 |
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- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | - | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET 1200V 25A TO-247 |
4.176 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi |
GEN2 SIC MOSFET 1200V 80MOHM SOT |
3.114 |
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- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 35A | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 (ISOTOP®) | SOT-227-4, miniBLOC |
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Microsemi |
GEN2 SIC MOSFET 700V 15MOHM D3PA |
7.542 |
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- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 700V | 166A | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |