Microsemi Transistoren - FETs, MOSFETs - Single

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Drain to Source Voltage (Vdss)

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Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.

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Antriebsspannung (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs (th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Eingangskapazität (Ciss) (Max) @ Vds

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FET-Funktion

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Verlustleistung (max.)

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Betriebstemperatur

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Montagetyp

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Paket / Fall

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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single

HerstellerMicrosemi Corporation

Datensätze 611

Seite 2/21

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	FET-Typ	Technologie	Drain to Source Voltage (Vdss)	Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.	Antriebsspannung (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Eingangskapazität (Ciss) (Max) @ Vds	FET-Funktion	Verlustleistung (max.)	Betriebstemperatur	Montagetyp	Lieferantengerätepaket	Paket / Fall
APT37M100B2	Microsemi	MOSFET N-CH 1000V 37A T-MAX	452	-	N-Channel	MOSFET (Metal Oxide)	1000V	37A (Tc)	10V	330mOhm @ 18A, 10V	5V @ 2.5mA	305nC @ 10V	±30V	9835pF @ 25V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	T-MAX™ [B2]	TO-247-3 Variant
APT10078BLLG	Microsemi	MOSFET N-CH 1000V 14A TO-247	4.032	POWER MOS 7®	N-Channel	MOSFET (Metal Oxide)	1000V	14A (Tc)	10V	780mOhm @ 7A, 10V	5V @ 1mA	95nC @ 10V	±30V	2525pF @ 25V	-	403W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
APT28M120L	Microsemi	MOSFET N-CH 1200V 29A TO264	5.958	POWER MOS 8™	N-Channel	MOSFET (Metal Oxide)	1200V	29A (Tc)	10V	530mOhm @ 14A, 10V	5V @ 2.5mA	300nC @ 10V	±30V	9670pF @ 25V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
APT94N60L2C3G	Microsemi	MOSFET N-CH 600V 94A TO264	6.606	-	N-Channel	MOSFET (Metal Oxide)	600V	94A (Tc)	10V	35mOhm @ 60A, 10V	3.9V @ 5.4mA	640nC @ 10V	±20V	13600pF @ 25V	-	833W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	264 MAX™ [L2]	TO-264-3, TO-264AA
APT5010JLLU2	Microsemi	MOSFET N-CH 500V 41A SOT-227	7.938	-	N-Channel	MOSFET (Metal Oxide)	500V	41A (Tc)	10V	100mOhm @ 23A, 10V	5V @ 2.5mA	96nC @ 10V	±30V	4360pF @ 25V	-	378W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
APT8020JLL	Microsemi	MOSFET N-CH 800V 33A SOT-227	5.166	POWER MOS 7®	N-Channel	MOSFET (Metal Oxide)	800V	33A (Tc)	10V	200mOhm @ 16.5A, 10V	5V @ 2.5mA	195nC @ 10V	±30V	5200pF @ 25V	-	520W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
MSC090SMA070B	Microsemi	GEN2 SIC MOSFET 700V 90MOHM TO-2	7.830	-	N-Channel	SiC (Silicon Carbide Junction Transistor)	700V	-	-	-	-	-	-	-	-	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
MSC090SMA070S	Microsemi	GEN2 SIC MOSFET 700V 90MOHM D3PA	6.084	-	N-Channel	SiC (Silicon Carbide Junction Transistor)	700V	-	-	-	-	-	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	D3Pak	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
MSC015SMA070B	Microsemi	GEN2 SIC MOSFET 700V 15MOHM TO-2	6.432	-	N-Channel	SiC (Silicon Carbide Junction Transistor)	700V	131A (Tc)	20V	19mOhm @ 40A, 20V	2.4V @ 1mA	215nC @ 20V	+25V, -10V	4500pF @ 700V	-	400W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
APT30N60BC6	Microsemi	MOSFET N-CH 600V 30A TO-247	7.758	CoolMOS™	N-Channel	MOSFET (Metal Oxide)	600V	30A (Tc)	10V	125mOhm @ 14.5A, 10V	3.5V @ 960µA	88nC @ 10V	±20V	2267pF @ 25V	-	219W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
APT24M120B2	Microsemi	MOSFET N-CH 1200V 24A T-MAX	8.694	POWER MOS 8™	N-Channel	MOSFET (Metal Oxide)	1200V	24A (Tc)	10V	630mOhm @ 12A, 10V	5V @ 2.5mA	260nC @ 10V	±30V	8370pF @ 25V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	T-MAX™ [B2]	TO-247-3 Variant
APT66F60B2	Microsemi	MOSFET N-CH 600V 70A TO-247	7.398	POWER MOS 8™	N-Channel	MOSFET (Metal Oxide)	600V	70A (Tc)	10V	90mOhm @ 33A, 10V	5V @ 2.5mA	330nC @ 10V	±30V	13190pF @ 25V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	T-MAX™ [B2]	TO-247-3 Variant
APT8024B2LLG	Microsemi	MOSFET N-CH 800V 31A T-MAX	8.370	POWER MOS 7®	N-Channel	MOSFET (Metal Oxide)	800V	31A (Tc)	10V	240mOhm @ 15.5A, 10V	5V @ 2.5mA	160nC @ 10V	±30V	4670pF @ 25V	-	565W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	T-MAX™ [B2]	TO-247-3 Variant
APT30F60J	Microsemi	MOSFET N-CH 600V 31A SOT-227	6.768	POWER MOS 8™	N-Channel	MOSFET (Metal Oxide)	600V	31A (Tc)	10V	150mOhm @ 21A, 10V	5V @ 2.5mA	215nC @ 10V	±30V	8590pF @ 25V	-	355W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT51M50J	Microsemi	MOSFET N-CH 500V 51A SOT-227	8.532	-	N-Channel	MOSFET (Metal Oxide)	500V	51A (Tc)	10V	75mOhm @ 37A, 10V	5V @ 2.5mA	290nC @ 10V	±30V	11600pF @ 25V	-	480W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT21M100J	Microsemi	MOSFET N-CH 1000V 21A SOT-227	8.154	POWER MOS 8™	N-Channel	MOSFET (Metal Oxide)	1000V	21A (Tc)	10V	380mOhm @ 16A, 10V	5V @ 2.5mA	260nC @ 10V	±30V	8500pF @ 25V	-	462W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT40SM120J	Microsemi	MOSFET N-CH 1200V 32A SOT227	8.874	-	N-Channel	MOSFET (Metal Oxide)	1200V	32A (Tc)	20V	100mOhm @ 20A, 20V	3V @ 1mA (Typ)	130nC @ 20V	+25V, -10V	2560pF @ 1000V	-	165W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
APT47M60J	Microsemi	MOSFET N-CH 600V 49A SOT-227	8.982	POWER MOS 8™	N-Channel	MOSFET (Metal Oxide)	600V	49A (Tc)	10V	90mOhm @ 33A, 10V	5V @ 2.5mA	330nC @ 10V	±30V	13190pF @ 25V	-	540W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT5010JVRU2	Microsemi	MOSFET N-CH 500V 44A SOT227	6.030	-	N-Channel	MOSFET (Metal Oxide)	500V	44A (Tc)	10V	100mOhm @ 22A, 10V	4V @ 2.5mA	312nC @ 10V	±30V	7410pF @ 25V	-	450W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
APTML100U60R020T1AG	Microsemi	MOSFET N-CH 1000V 20A SP1	3.942	-	N-Channel	MOSFET (Metal Oxide)	1000V	20A (Tc)	10V	720mOhm @ 10A, 10V	4V @ 2.5mA	-	±30V	6000pF @ 25V	-	520W (Tc)	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
APTM50UM09FAG	Microsemi	MOSFET N-CH 500V 497A SP6	4.302	-	N-Channel	MOSFET (Metal Oxide)	500V	497A (Tc)	10V	10mOhm @ 248.5A, 10V	5V @ 30mA	1200nC @ 10V	±30V	63300pF @ 25V	-	5000W (Tc)	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APT53F80J	Microsemi	MOSFET N-CH 800V 57A SOT-227	2.124	POWER MOS 8™	N-Channel	MOSFET (Metal Oxide)	800V	57A (Tc)	10V	110mOhm @ 43A, 10V	5V @ 5mA	570nC @ 10V	±30V	17550pF @ 25V	-	960W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT29F100B2	Microsemi	MOSFET N-CH 1000V 30A T-MAX	2.106	POWER MOS 8™	N-Channel	MOSFET (Metal Oxide)	1000V	30A (Tc)	10V	440mOhm @ 16A, 10V	5V @ 2.5mA	260nC @ 10V	±30V	8500pF @ 25V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	T-MAX™ [B2]	TO-247-3 Variant
APT11N80BC3G	Microsemi	MOSFET N-CH 800V 11A TO-247	8.208	-	N-Channel	MOSFET (Metal Oxide)	800V	11A (Tc)	10V	450mOhm @ 7.1A, 10V	3.9V @ 680µA	60nC @ 10V	±20V	1585pF @ 25V	-	156W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
APT24F50B	Microsemi	MOSFET N-CH 500V 24A TO-247	4.752	POWER MOS 8™	N-Channel	MOSFET (Metal Oxide)	500V	24A (Tc)	10V	240mOhm @ 11A, 10V	5V @ 1mA	90nC @ 10V	±30V	3630pF @ 25V	-	335W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
APT30F50B	Microsemi	MOSFET N-CH 500V 30A TO-247	5.940	POWER MOS 8™	N-Channel	MOSFET (Metal Oxide)	500V	30A (Tc)	10V	190mOhm @ 14A, 10V	5V @ 1mA	115nC @ 10V	±30V	4525pF @ 25V	-	415W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
APT7F120B	Microsemi	MOSFET N-CH 1200V 7A TO-247	6.084	-	N-Channel	MOSFET (Metal Oxide)	1200V	7A (Tc)	10V	2.9Ohm @ 3A, 10V	5V @ 1mA	80nC @ 10V	±30V	2565pF @ 25V	-	335W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
APT17F100B	Microsemi	MOSFET N-CH 1000V 17A TO-247	6.948	-	N-Channel	MOSFET (Metal Oxide)	1000V	17A (Tc)	10V	800mOhm @ 9A, 10V	5V @ 1mA	150nC @ 10V	±30V	4845pF @ 25V	-	625W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
APT14M120B	Microsemi	MOSFET N-CH 1200V 14A TO-247	4.122	-	N-Channel	MOSFET (Metal Oxide)	1200V	14A (Tc)	10V	1.2Ohm @ 7A, 10V	5V @ 1mA	145nC @ 10V	±30V	4765pF @ 25V	-	625W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
APT47N60BC3G	Microsemi	MOSFET N-CH 600V 47A TO-247	6.516	-	N-Channel	MOSFET (Metal Oxide)	600V	47A (Tc)	10V	70mOhm @ 30A, 10V	3.9V @ 2.7mA	260nC @ 10V	±20V	7015pF @ 25V	-	417W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3

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