Microsemi Transistoren - FETs, MOSFETs - Arrays
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Arrays
HerstellerMicrosemi Corporation
Datensätze 240
Seite 8/8
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | FET-Funktion | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Eingangskapazität (Ciss) (Max) @ Vds | Leistung - max | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
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Microsemi |
MOSFET 2N-CH 1000V 22A SP3 |
8.712 |
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POWER MOS 7® | 2 N-Channel (Dual) | Standard | 1000V (1kV) | 22A | 420mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi |
MOSFET 2N-CH 100V 139A SP3 |
7.380 |
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POWER MOS V® | 2 N-Channel (Dual) Asymmetrical | Standard | 100V | 139A | 10mOhm @ 69.5A, 10V | 4V @ 2.5mA | 350nC @ 10V | 9875pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi |
MOSFET 2N-CH 1200V 17A SP3 |
2.340 |
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POWER MOS 7® | 2 N-Channel (Dual) | Standard | 1200V (1.2kV) | 17A | 684mOhm @ 8.5A, 10V | 5V @ 2.5mA | 187nC @ 10V | 5155pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi |
MOSFET 2N-CH 200V 104A SP3 |
6.714 |
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POWER MOS 7® | 2 N-Channel (Dual) Asymmetrical | Standard | 200V | 104A | 19mOhm @ 52A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7220pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi |
MOSFET 2N-CH 500V 51A SP3 |
8.676 |
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POWER MOS 8™ | 2 N-Channel (Dual) Asymmetrical | Standard | 500V | 51A | 78mOhm @ 42A, 10V | 5V @ 2.5mA | 340nC @ 10V | 10800pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi |
MOSFET 2N-CH 1000V 20A SP3 |
7.308 |
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- | 2 N-Channel (Dual) | Standard | 1000V (1kV) | 20A | 720mOhm @ 10A, 10V | 4V @ 2.5mA | - | 6000pF @ 25V | 520W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi |
MOSFET 2N-CH 100V 154A SP3 |
2.268 |
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- | 2 N-Channel (Dual) | Standard | 100V | 154A (Tc) | 10mOhm @ 69.5A, 10V | 4V @ 2.5mA | - | 9875pF @ 25V | 480W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi |
MOSFET 2N-CH 200V 109A SP3 |
8.856 |
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- | 2 N-Channel (Dual) | Standard | 200V | 109A (Tc) | 19mOhm @ 50A, 10V | 4V @ 2.5mA | - | 9880pF @ 25V | 480W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi |
MOSFET 2N-CH 500V 52A SP3 |
8.748 |
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- | 2 N-Channel (Dual) | Standard | 500V | 52A | 108mOhm @ 26A, 10V | 4V @ 2.5mA | - | 7600pF @ 25V | 568W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi |
MOSFET 2N-CH 600V 49A SP1 |
2.826 |
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CoolMOS™ | 2 N-Channel (Dual) | Standard | 600V | 49A | 45mOhm @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | 7200pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET 2N-CH 600V 39A SP1 |
3.060 |
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CoolMOS™ | 2 N-Channel (Dual) | Super Junction | 600V | 39A | 70mOhm @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | 7000pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET 2N-CH 600V 49A SP1 |
3.258 |
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CoolMOS™ | 2 N-Channel (Dual) | Super Junction | 600V | 49A | 45mOhm @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | 7200pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET 2N-CH 600V 39A SP1 |
8.190 |
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CoolMOS™ | 2 N-Channel (Dual) | Super Junction | 600V | 39A | 70mOhm @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | 7000pF @ 25V | 250W | - | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET 4N-CH 900V 30A SP4 |
3.816 |
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CoolMOS™ | 4 N-Channel (H-Bridge) | Super Junction | 900V | 30A | 120mOhm @ 26A, 10V | 3.5V @ 3mA | 270nC @ 10V | 6800pF @ 100V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi |
MOSFET 2N-CH 900V 59A SP4 |
7.902 |
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CoolMOS™ | 2 N-Channel (Half Bridge) | Super Junction | 900V | 59A | 60mOhm @ 52A, 10V | 3.5V @ 6mA | 540nC @ 10V | 13600pF @ 100V | 462W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi |
MOSFET 4N-CH 100V 1A MO-036AB |
8.154 |
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Military, MIL-PRF-19500/597 | 4 N-Channel | Standard | 100V | 1A | 700mOhm @ 600mA, 10V | 4V @ 250µA | 60nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | MO-036AB |
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Microsemi |
MOSFET 4P-CH 100V 0.75A MO-036AB |
3.654 |
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Military, MIL-PRF-19500/599 | 4 P-Channel | Standard | 100V | 750mA | 1.4Ohm @ 500mA, 10V | 4V @ 250µA | - | - | 1.4W | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | - |
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Microsemi |
MOSFET 4N-CH 100V 1A MO-036AB |
2.970 |
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Military, MIL-PRF-19500/597 | 4 N-Channel | Standard | 100V | 1A | 700mOhm @ 600mA, 10V | 4V @ 250µA | 60nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | MO-036AB |
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Microsemi |
MOSFET 4P-CH 100V 0.75A MO-036AB |
8.316 |
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Military, MIL-PRF-19500/599 | 4 P-Channel | Standard | 100V | 750mA | 1.4Ohm @ 500mA, 10V | 4V @ 250µA | - | - | 1.4W | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | MO-036AB |
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Microsemi |
MOSFET 4N-CH 100V 1A MO-036AB |
5.796 |
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Military, MIL-PRF-19500/597 | 4 N-Channel | Standard | 100V | 1A | 700mOhm @ 600mA, 10V | 4V @ 250µA | 60nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | MO-036AB |
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Microsemi |
MOSFET 4P-CH 100V 0.75A MO-036AB |
8.460 |
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Military, MIL-PRF-19500/599 | 4 P-Channel | Standard | 100V | 750mA | 1.4Ohm @ 500mA, 10V | 4V @ 250µA | - | - | 1.4W | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | MO-036AB |
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Microsemi |
MOSFET 4N-CH 100V 1A MO-036AB |
3.672 |
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- | 4 N-Channel | Standard | 100V | 1A | 700mOhm @ 600mA, 10V | 4V @ 250µA | 60nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | MO-036AB |
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Microsemi |
MOSFET 4P-CH 100V 0.75A MO-036AB |
7.038 |
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- | 4 P-Channel | Standard | 100V | 750mA | 1.4Ohm @ 500mA, 10V | 4V @ 250µA | - | - | 1.4W | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | MO-036AB |
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Microsemi |
MOSFET 4N-CH 1200V 28A SP3 |
2.286 |
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- | 4 N-Channel (Three Level Inverter) | Silicon Carbide (SiC) | 1200V (1.2kV) | 28A (Tc) | 98mOhm @ 20A, 20V | 2.2V @ 1mA | 49nC @ 20V | 950pF @ 1000V | 125W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi |
MOSFET 2N-CH 1200V 131A D3 |
3.490 |
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- | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 131A (Tc) | 20mOhm @ 100A, 20V | 2.2V @ 5mA (Typ) | 246nC @ 20V | 4750pF @ 1000V | 625W | -40°C ~ 150°C (TJ) | Chassis Mount | D-3 Module | D3 |
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Microsemi |
MOSFET 2N-CH 1200V 55A SP1 |
5.562 |
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- | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 55A (Tc) | 49mOhm @ 40A, 20V | 2.2V @ 2mA (Typ) | 98nC @ 20V | 1900pF @ 1000V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET 6N-CH 1200V 78A SP6-P |
3.420 |
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- | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 78A (Tc) | 33mOhm @ 60A, 20V | 2.2V @ 3mA (Typ) | 148nC @ 20V | 2850pF @ 1000V | 370W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6-P |
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Microsemi |
MOSFET 4N-CH 1200V 55A SP3F |
2.916 |
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- | 4 N-Channel (Three Level Inverter) | Silicon Carbide (SiC) | 1200V (1.2kV) | 48A (Tc) | 49mOhm @ 40A, 20V | 2.2V @ 2mA (Typ) | 98nC @ 20V | 1900pF @ 1000V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi |
POWER MODULE - SIC MOSFET |
6.156 |
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- | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 26A (Tc) | 98mOhm @ 20A, 20V | 3V @ 5mA | 62nC @ 20V | 950pF @ 1000V | 125W | -40°C ~ 150°C (TJ) | Chassis Mount | Module | SP3 |
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Microsemi |
POWER MODULE - SIC MOSFET |
4.716 |
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- | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 73A (Tc) | 34mOhm @ 50A, 20V | 3V @ 12.5mA | 161nC @ 5V | 2788pF @ 1000V | 375W | -40°C ~ 150°C (TJ) | Chassis Mount | Module | SP3 |