Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 83/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Microchip Technology |
MOSFET N-CH 450V 0.2A SOT89-3 |
52.728 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 200mA | 0V | 20Ohm @ 150mA, 0V | - | - | ±20V | 360pF @ 25V | Depletion Mode | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
156.342 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 4.4mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | ±20V | 5435pF @ 30V | - | 132W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Nexperia |
MOSFET N-CH 25V 100A LFPAK |
100.182 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 1.15mOhm @ 25A, 10V | 1.95V @ 1mA | 83nC @ 10V | ±20V | 5287pF @ 12V | - | 215W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 55V 18A D2PAK |
30.162 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microchip Technology |
MOSFET N-CH 250V 0.215A TO92-3 |
15.300 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 215mA (Ta) | 4.5V, 10V | 7Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 110pF @ 25V | - | 740mW (Ta) | - | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET P-CH 150V 2.2A 8-SOIC |
88.122 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 2.2A (Ta) | 10V | 240mOhm @ 1.3A, 10V | 5V @ 250µA | 49nC @ 10V | ±20V | 1280pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH TO252-3 |
45.696 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 73A (Tc) | 10V | 8.9mOhm @ 70A, 10V | 4V @ 120µA | 70nC @ 10V | ±20V | 4810pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 200V 21.5A LFPAK |
1.086.444 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 21.5A (Tc) | 10V | 102mOhm @ 12A, 10V | 4V @ 1mA | 30.7nC @ 10V | ±20V | 1568pF @ 30V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8 |
45.042 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 100A (Tc) | 4.5V, 10V | 2mOhm @ 30A, 10V | 2V @ 250µA | 124nC @ 10V | ±20V | 9600pF @ 15V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 60V 20A TO252 |
50.148 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4.5V, 10V | 55mOhm @ 19A, 10V | 2.5V @ 250µA | 41nC @ 10V | ±20V | 1490pF @ 25V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 21A PQFN |
32.688 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 40A (Tc) | 4.5V, 10V | 4.6mOhm @ 21A, 10V | 2.4V @ 100µA | 58nC @ 4.5V | ±20V | 5250pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerVDFN |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 60V 18A TO251 |
115.770 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 68mOhm @ 6A, 10V | 2.2V @ 250µA | 16.4nC @ 10V | ±20V | 870pF @ 30V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Stub Leads, IPak |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 1.3A TO-220 |
14.352 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 1.3A (Tc) | 10V | 9Ohm @ 650mA, 10V | 4.5V @ 250µA | 8nC @ 10V | ±30V | 160pF @ 25V | - | 41.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 7.5A 8-SOIC |
24.060 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 7.5A (Ta) | 6V, 10V | 23mOhm @ 7.5A, 10V | 4V @ 250µA | 37nC @ 10V | ±20V | 2015pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
N-CHANNEL 600 V, 0.550 OHM TYP., |
53.334 |
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MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | 7.5A (Tc) | 10V | 595mOhm @ 3.75A, 10V | 4.75V @ 250µA | 12.4nC @ 10V | ±25V | 390pF @ 100V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 42A DPAK |
22.398 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 26mOhm @ 25A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 200V 120MA TO92-3 |
263.898 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 120mA (Ta) | 2.6V, 5V | 30Ohm @ 100mA, 5V | - | - | ±20V | - | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 2.1A SOT223 |
34.284 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2.1A (Ta) | 5V, 10V | 330mOhm @ 3A, 10V | 3V @ 1mA | - | ±20V | 350pF @ 25V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Microchip Technology |
MOSFET N-CH 40V 350MA TO92-3 |
14.958 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 350mA (Tj) | 5V, 10V | 3Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 65pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Rohm Semiconductor |
PCH -60V -14A POWER MOSFET |
48.132 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 14A (Ta) | 4V, 10V | 84mOhm @ 14A, 10V | 3V @ 1mA | 27nC @ 10V | ±20V | 1900pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 80V 100A LFPAK |
71.604 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 10V | 7.8mOhm @ 25A, 10V | 4V @ 1mA | 63.3nC @ 10V | ±20V | 5347pF @ 25V | - | 238W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 80V 20A 8DFN |
28.122 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 20A (Ta), 50A (Tc) | 6V, 10V | 8.5mOhm @ 20A, 10V | 3.4V @ 250µA | 38nC @ 10V | ±20V | 1871pF @ 40V | - | 6.3W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 40V 100A 8DFN |
52.026 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 2.4mOhm @ 20A, 10V | 2.4V @ 250µA | 70nC @ 10V | ±20V | 3780pF @ 20V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 14A TO-251 |
28.632 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4A (Ta), 14A (Tc) | 4.5V, 10V | 68mOhm @ 5A, 10V | 2.9V @ 250µA | 10nC @ 10V | ±20V | 390pF @ 50V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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Nexperia |
MOSFET N-CH 80V 100A LFPAK |
13.602 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 5V | 8mOhm @ 25A, 10V | 2.1V @ 1mA | 54.7nC @ 5V | ±10V | 8167pF @ 25V | - | 238W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 30V 28A MX |
34.074 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta), 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 28A, 10V | 2.35V @ 100µA | 42nC @ 4.5V | ±20V | 4700pF @ 15V | - | 2.8W (Ta), 100W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 100V 50A TO252-3 |
21.858 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Tc) | 4.5V, 10V | 15mOhm @ 50A, 10V | 2.4V @ 60µA | 64nC @ 10V | ±20V | 4180pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 60V 22A |
53.130 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta), 90A (Tc) | 4.5V, 10V | 2.8mOhm @ 25A, 10V | 3V @ 250µA | 96.3nC @ 10V | ±20V | 4515pF @ 30V | - | 2.1W (Ta), 105W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 525V 4.4A DPAK |
24.888 |
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UltraFASTmesh™ | N-Channel | MOSFET (Metal Oxide) | 525V | 4.4A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4.5V @ 50µA | 16.9nC @ 10V | ±30V | 529pF @ 25V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 5.7A DIRECTFET |
170.100 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 5.7A (Ta), 25A (Tc) | 10V | 35mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | ±20V | 890pF @ 25V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SJ | DirectFET™ Isometric SJ |