Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 80/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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STMicroelectronics |
MOSFET N-CH 60V 16A DPAK |
41.424 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Tc) | 10V | 70mOhm @ 8A, 10V | 2V @ 250µA | 14.1nC @ 10V | ±20V | 400pF @ 15V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 40V 75A DPAK |
84.318 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 5V, 10V | 7mOhm @ 25A, 10V | 2V @ 1mA | 32nC @ 5V | ±15V | 3619pF @ 25V | - | 167W (Tc) | -55°C ~ 185°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 9.4A 8-SOIC |
32.508 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 9.4A (Ta) | 4.5V, 10V | 15.5mOhm @ 9.4A, 10V | 2V @ 250µA | 34nC @ 4.5V | ±12V | 2460pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 30V 4.6A 2X2 4-MFP |
86.934 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 4.6A (Ta) | 2.5V, 4.5V | 46mOhm @ 1A, 4.5V | 1.4V @ 250µA | 26nC @ 4.5V | ±12V | - | - | 1.47W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA, CSPBGA |
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Diodes Incorporated |
MOSFET P-CH 60V 6.8A DPAK |
22.866 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 6.8A (Ta) | 4.5V, 10V | 55mOhm @ 3.5A, 10V | 1V @ 250µA | 44nC @ 10V | ±20V | 1580pF @ 30V | - | 2.15W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 35A TO252-3 |
22.722 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 4.5V, 10V | 24mOhm @ 35A, 10V | 2.4V @ 39µA | 39nC @ 10V | ±20V | 2700pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 100V 0.31A SOT223 |
51.156 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 310mA (Ta) | 10V | 8Ohm @ 375mA, 10V | 3.5V @ 1mA | - | ±20V | 100pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Nexperia |
MOSFET N-CH 100V 56A LFPAK |
78.636 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 56A (Tc) | 5V | 18mOhm @ 15A, 10V | 2.1V @ 1mA | 39nC @ 5V | ±10V | 5085pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 30V LFPAK |
13.926 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 1.5mOhm @ 15A, 10V | 2.15V @ 1mA | 77.9nC @ 10V | ±20V | 5057pF @ 12V | - | 109W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Diodes Incorporated |
MOSFET BVDSS: 25V 30V POWERDI506 |
24.762 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 135A (Tc) | 5V, 10V | 3.8mOhm @ 20A, 10V | 2.6V @ 250µA | 127nC @ 10V | ±25V | 3775pF @ 15V | - | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 150V 3A MLP 3.3SQ |
223.044 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 3A (Tc) | 10V | 1.5Ohm @ 1.5A, 10V | 5V @ 250µA | 9nC @ 10V | ±30V | 270pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |
25.878 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | - | 6mOhm @ 20A, 10V | 2.5V @ 250µA | 40nC @ 10V | - | 1750pF @ 30V | - | - | - | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET N-CH 60V 24A DPAK |
21.174 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 24A (Tc) | 10V | 40mOhm @ 12A, 10V | 4V @ 250µA | 31nC @ 10V | ±20V | 690pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 56A DPAK |
22.194 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 56A (Tc) | 6V, 10V | 3.9mOhm @ 56A, 10V | 3.9V @ 100µA | 130nC @ 10V | ±20V | 3150pF @ 25V | - | 98W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 90A DPAK |
18.984 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 6V, 10V | 4.8mOhm @ 66A, 10V | 3.7V @ 100µA | 130nC @ 10V | ±20V | 4360pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 18.2A 8-SOIC |
24.378 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 18.2A (Tc) | 4.5V, 10V | 9.5mOhm @ 13.8A, 10V | 3V @ 250µA | 26nC @ 10V | ±20V | 1220pF @ 15V | - | 3W (Ta), 5.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 12A 8-SOIC |
20.790 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 7mOhm @ 16A, 10V | 3V @ 250µA | 25nC @ 4.5V | ±20V | 3230pF @ 15V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 43A DPAK |
254.976 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | ±20V | 1150pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 60V 46A DPAK |
21.990 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 60V | 46A (Tc) | 4.5V, 10V | 6.7mOhm @ 23A, 10V | 2.5V @ 300µA | 26nC @ 10V | ±20V | 1990pF @ 30V | - | 66W (Tc) | 175°C | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 500MA TO-92 |
96.858 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 500mA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 1mA | - | ±20V | 40pF @ 10V | - | 830mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET N-CH 500V 6A DPAK |
45.300 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 6A (Tc) | 10V | 900mOhm @ 3A, 10V | 5V @ 250µA | 16.6nC @ 10V | ±30V | 9400pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 40V 40A POWERPAKSO-8 |
216.036 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 40A (Tc) | 4.5V, 10V | 29mOhm @ 18A, 10V | 2.5V @ 250µA | 57nC @ 10V | ±20V | 2030pF @ 20V | - | 83W (Tc) | -55°C ~ 175°C (TA) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 30V POWER56 |
25.200 |
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PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 49A (Tc) | 4.5V, 10V | 2.8mOhm @ 24A, 10V | 3V @ 1mA | 47nC @ 10V | ±20V | 3000pF @ 15V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 40V 50A TO252-3 |
101.358 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 10V | 12.6mOhm @ 50A, 10V | 4V @ 85µA | 51nC @ 10V | ±20V | 3670pF @ 25V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 20A WDFN8 |
72.138 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta), 85A (Tc) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 2V @ 250µA | 18nC @ 10V | ±20V | 1600pF @ 25V | - | 3.2W (Ta), 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 59V 2.6A SOT-223-4 |
162.276 |
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- | N-Channel | MOSFET (Metal Oxide) | 59V | 2.6A (Ta) | 3.5V, 10V | 110mOhm @ 2.6A, 10V | 1.9V @ 100µA | 4.5nC @ 4.5V | ±15V | 155pF @ 35V | - | 1.69W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 450V 140MA SOT-223 |
105.792 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 140mA (Ta) | 10V | 50Ohm @ 100mA, 10V | 3V @ 1mA | - | ±20V | 70pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 60V 40A 1212 |
52.176 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Tc) | 4.5V, 10V | 8.5mOhm @ 20A, 10V | 2.6V @ 250µA | 32nC @ 10V | ±20V | 1320pF @ 30V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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ON Semiconductor |
MOSFET N-CH 30V 160A SO8FL |
17.862 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 106A (Tc) | 4.5V, 10V | 2.1mOhm @ 30A, 10V | 2.3V @ 1mA | 47.9nC @ 10V | ±20V | 3250pF @ 15V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 60V 18.6A TO252-3 |
67.704 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 18.6A (Tc) | 10V | 130mOhm @ 13.2A, 10V | 4V @ 1mA | 33nC @ 10V | ±20V | 860pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |