Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 85/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 20V 13.5A 1212-8 |
26.082 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 13.5A (Ta) | 4.5V, 10V | 5.3mOhm @ 21.1A, 10V | 2.5V @ 250µA | 21nC @ 4.5V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 6A 8-SOIC |
25.668 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4.5V, 10V | 22mOhm @ 6A, 10V | 3V @ 250µA | 27nC @ 10V | ±20V | - | - | 1.7W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET P-CH 30V 11A 8-SOIC |
73.392 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 14mOhm @ 11A, 10V | 3V @ 250µA | 42nC @ 5V | ±20V | 3000pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 60V 11.5A DPAK |
53.448 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 11.5A (Ta), 50A (Tc) | 4.5V, 10V | 12.3mOhm @ 10.7A, 10V | 3V @ 250µA | 65nC @ 10V | ±20V | 3215pF @ 30V | - | 3.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 32A 8-SOP |
79.320 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 32A (Tc) | 10V | 8.8mOhm @ 16A, 10V | 4V @ 500µA | 33nC @ 10V | ±20V | 2800pF @ 50V | - | 1.6W (Ta), 61W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET P-CH 30V 5.9A SOT-223 |
30.882 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 5.9A (Ta) | 4.5V, 10V | 50mOhm @ 5.9A, 10V | 2.7V @ 250µA | 40nC @ 10V | ±20V | 950pF @ 15V | - | 3W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 40V 14A POWER33 |
97.026 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 14A (Ta), 20A (Tc) | 4.5V, 10V | 5.8mOhm @ 13.5A, 10V | 3V @ 250µA | 43nC @ 10V | ±20V | 2660pF @ 20V | - | 2W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 600V 7A DPAK |
52.734 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 920pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 22A TSDSON-8 |
51.660 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 22A (Ta), 40A (Tc) | 4.5V, 10V | 1.8mOhm @ 20A, 10V | 2V @ 250µA | 36nC @ 10V | ±20V | 2500pF @ 12V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 60V 40A |
29.106 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Tc) | 4.5V, 10V | 14mOhm @ 20A, 10V | 2.5V @ 250µA | 51nC @ 10V | ±20V | 2105pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 40V 80A PPAK SO-8L |
27.978 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 1.35mOhm @ 20A, 10V | 2.4V @ 250µA | 182nC @ 10V | +20V, -16V | 9400pF @ 20V | - | 69.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 150V 36.8A SO-8 |
25.818 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 36.8A (Tc) | 7.5V, 10V | 23.2mOhm @ 15A, 10V | 4.5V @ 250µA | 31nC @ 10V | ±20V | 1070pF @ 75V | - | 69.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 200V 3.3A TO-220AB |
57.102 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 3.3A (Tc) | 10V | 1.5Ohm @ 2A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Microchip Technology |
MOSFET N-CH 350V 0.12A TO92-3 |
16.134 |
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- | N-Channel | MOSFET (Metal Oxide) | 350V | 120mA (Tj) | 0V | 25Ohm @ 120mA, 0V | - | - | ±20V | 300pF @ 25V | Depletion Mode | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET P-CH 500V 1.5A D2PAK |
23.310 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 500V | 1.5A (Tc) | 10V | 10.5Ohm @ 750mA, 10V | 5V @ 250µA | 14nC @ 10V | ±30V | 350pF @ 25V | - | 3.13W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 17A TO263-3 |
21.576 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta), 45A (Tc) | 6V, 10V | 5.7mOhm @ 45A, 10V | 2.8V @ 36µA | 27nC @ 10V | ±20V | 2000pF @ 30V | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 30A D2PAK |
256.224 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4V, 10V | 35mOhm @ 16A, 10V | 2V @ 250µA | 25nC @ 5V | ±16V | 880pF @ 25V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET P-CH 40V 50A DPAK |
23.166 |
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Automotive, AEC-Q101, STripFET™ F6 | P-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 15mOhm @ 25A, 10V | 2.5V @ 250µA | 65.5nC @ 10V | ±18V | 3525pF @ 25V | - | 58W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 43A D2PAK |
31.752 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | ±20V | 1150pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
MOSFET N-CH 30V 100A 8VSON |
42.510 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Ta) | 4.5V, 10V | 1mOhm @ 35A, 10V | 1.8V @ 250µA | 64nC @ 4.5V | ±20V | 9000pF @ 15V | - | 3.2W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 42A DPAK |
28.986 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 42A (Tc) | 10V | 5.5mOhm @ 42A, 10V | 4V @ 250µA | 89nC @ 10V | ±20V | 2950pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 60V 600MA TO92-3 |
89.592 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 600mA (Ta) | 5V, 10V | 1Ohm @ 1.5A, 10V | 3V @ 1mA | - | ±20V | 100pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 600MA TO92-3 |
33.528 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 600mA (Ta) | 5V, 10V | 1Ohm @ 1.5A, 10V | 3V @ 1mA | - | ±20V | 100pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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STMicroelectronics |
MOSFET N-CH 620V 5.5A DPAK |
37.314 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 5.5A (Tc) | 10V | 1.28Ohm @ 2.8A, 10V | 4.5V @ 50µA | 25.7nC @ 10V | ±30V | 706pF @ 50V | - | 90W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 60V 55A ATPAK |
43.242 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 55A (Ta) | 4V, 10V | 16mOhm @ 28A, 10V | - | 92nC @ 10V | ±20V | 4000pF @ 20V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
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ON Semiconductor |
MOSFET N-CH 75V 50A D-PAK |
26.766 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 9A (Ta), 50A (Tc) | 6V, 10V | 16mOhm @ 50A, 10V | 4V @ 250µA | 47nC @ 10V | ±20V | 1874pF @ 25V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 40V 100A PPAK SO-8 |
27.906 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 0.88mOhm @ 20A, 10V | 2.3V @ 250µA | 204nC @ 10V | +20V, -16V | 10500pF @ 20V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Texas Instruments |
MOSFET N-CHANNEL 40V 50A 8VSON |
32.358 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Ta) | 4.5V, 10V | 6.6mOhm @ 17A, 10V | 2.4V @ 250µA | 9.2nC @ 4.5V | ±20V | 1656pF @ 20V | - | 3.1W (Ta), 77W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 800V 2.5A DPAK |
24.246 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 2.5A (Tc) | 10V | 3.5Ohm @ 1A, 10V | 5V @ 100µA | 9.5nC @ 10V | 30V | 130pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 60A POWERPAKSO-8 |
29.700 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 7.5V, 10V | 2.8mOhm @ 15A, 10V | 3.6V @ 250µA | 64nC @ 10V | ±20V | 3250pF @ 30V | - | 69.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |