Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 86/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET P-CH 60V 18.5A D2PAK |
112.878 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 18.5A (Ta) | 5V | 140mOhm @ 8.5A, 5V | 2V @ 250µA | 22nC @ 5V | ±20V | 1190pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CH 60V 270MA TO92-3 |
166.356 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 10V | 5Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 35pF @ 18V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 100V 320MA TO92-3 |
61.248 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 320mA (Ta) | 5V, 10V | 3Ohm @ 500mA, 10V | 1.5V @ 1mA | - | ±20V | 75pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 200V 180MA TO92-3 |
25.596 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 180mA (Ta) | 3V, 5V | 10Ohm @ 250mA, 5V | 1.5V @ 1mA | - | ±20V | 85pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 400V 0.12A TO92-3 |
13.398 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 120mA (Tj) | 0V | 25Ohm @ 120mA, 0V | - | - | ±20V | 300pF @ 25V | Depletion Mode | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 2.1A SOT223 |
29.502 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2.1A (Ta) | 5V, 10V | 330mOhm @ 3A, 10V | 3V @ 1mA | - | ±20V | 350pF @ 25V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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STMicroelectronics |
MOSFET N-CH 900V 3A DPAK |
18.918 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 900V | 3A (Tc) | 10V | 4.8Ohm @ 1.5A, 10V | 4.5V @ 50µA | 22.7nC @ 10V | ±30V | 590pF @ 25V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 20V 6.5A 8-SOIC |
23.358 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | 2.7V, 4.5V | 35mOhm @ 6.5A, 4.5V | 1V @ 250µA | 80nC @ 4.5V | ±8V | 2330pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 60V 50A D-PAK |
52.542 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta), 50A (Tc) | 6V, 10V | 10.5mOhm @ 50A, 10V | 4V @ 250µA | 37nC @ 10V | ±20V | 1840pF @ 25V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 40V 75A D2PAK |
15.522 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 5V | 4.4mOhm @ 25A, 10V | 2.1V @ 1mA | 33.9nC @ 5V | ±10V | 4483pF @ 25V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 60V 64A SO8FL |
23.718 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 10A (Ta), 64A (Tc) | 4.5V, 10V | 14mOhm @ 17A, 10V | 2.5V @ 250µA | 83nC @ 10V | ±20V | 4400pF @ 25V | - | 3.8W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 40V 55A POWERFLAT |
26.232 |
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Automotive, AEC-Q101, STripFET™ F6 | N-Channel | MOSFET (Metal Oxide) | 40V | 55A (Tc) | 10V | 3.6mOhm @ 13A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 3700pF @ 25V | - | 96W (Tc) | 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET TO263-3 |
19.896 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13nC @ 10V | ±20V | 555pF @ 400V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CH 60V 270MA TO92-3 |
55.230 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 1mA | - | ±20V | 60pF @ 10V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 55V 49A D2PAK |
16.206 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 49A (Tc) | 10V | 17.5mOhm @ 25A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1470pF @ 25V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 47A D2PAK |
17.388 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 47A (Tc) | 4V, 10V | 22mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | 1700pF @ 25V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 13A DPAK |
82.956 |
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Automotive, AEC-Q101, HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 760pF @ 25V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 30V 60A 8VSON |
19.458 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 2.3mOhm @ 25A, 10V | 1.8V @ 250µA | 30nC @ 4.5V | ±20V | 4420pF @ 15V | - | 2.8W (Ta), 108W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET P-CH 60V 160MA TO92-3 |
89.238 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 160mA (Ta) | 10V | 14Ohm @ 200mA, 10V | 3.5V @ 1mA | - | ±20V | 50pF @ 18V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 100V 10A I-PAK |
75.006 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Tc) | 4V, 10V | 185mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | ±16V | 440pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
N-CHANNEL 600 V, 0.310 OHM TYP., |
93.636 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 365mOhm @ 5.5A, 10V | 5V @ 250µA | 19nC @ 10V | ±25V | 730pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 100A 8TDSON |
42.924 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 7V, 10V | 1.7mOhm @ 50A, 10V | 3.4V @ 60µA | 83nC @ 10V | ±20V | 4810pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 250V 24.2A SO-8 |
99.090 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 24.2A (Tc) | 7.5V, 10V | 63mOhm @ 10A, 10V | 4V @ 250µA | 30nC @ 7.5V | ±20V | 1405pF @ 125V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 80V TRENCH DPAK |
53.028 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 8A (Ta), 37A (Tc) | 6V, 10V | 23mOhm @ 8A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 1035pF @ 50V | - | 3.1W (Ta), 62W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 32A TDSON-8 |
38.280 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 32A (Ta), 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2V @ 250µA | 61nC @ 10V | ±20V | 4300pF @ 20V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSO8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 500V 7.6A DPAK |
22.182 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 7.6A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 32nC @ 10V | ±20V | 750pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-1 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET N-CH 100V 730MA SOT89-3 |
19.398 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 730mA (Tj) | 3V, 10V | 1.5Ohm @ 750mA, 10V | 2V @ 1mA | - | ±20V | 125pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Vishay Siliconix |
MOSFET N-CH 150V 53.7A PPAK SO-8 |
24.036 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 53.7A (Tc) | 7.5V, 10V | 18mOhm @ 20A, 10V | 4.5V @ 250µA | 47nC @ 10V | ±20V | 1286pF @ 75V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Nexperia |
MOSFET N-CH 100V 63A D2PAK |
101.004 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 63A (Tc) | 4.5V, 10V | 18.5mOhm @ 25A, 10V | 2V @ 1mA | 53.4nC @ 5V | ±15V | 5657pF @ 25V | - | 203W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 100V 28A ATPAK |
22.686 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 28A (Ta) | 10V | 75mOhm @ 14A, 10V | - | 73nC @ 10V | ±20V | 4000pF @ 20V | - | 70W (Tc) | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |