Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 63/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 6TSOP |
54.732 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 2.5V, 4.5V | 17.5mOhm @ 8.3A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | ±12V | 1010pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 30V 5.8A 6TSOP |
43.068 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 5.8A (Ta) | 4.5V, 10V | 40mOhm @ 5.8A, 10V | 2.4V @ 25µA | 12nC @ 10V | ±20V | 595pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 38V 2A |
24.408 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 38V | 2A (Ta) | 4V, 10V | 150mOhm @ 2A, 10V | 1.7V @ 1mA | 3nC @ 10V | ±20V | 120pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Diodes Incorporated |
MOSFET P-CH 60V 4.2A UDFN2020-6 |
23.298 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 60V | 4.2A (Ta) | 4.5V, 10V | 110mOhm @ 4.5A, 10V | 3V @ 250µA | 17.2nC @ 10V | ±20V | 969pF @ 30V | - | 1.97W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6A 6-UDFNB |
22.620 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4V, 10V | 36mOhm @ 4A, 10V | 2.5V @ 100µA | 9.3nC @ 10V | ±20V | 550pF @ 10V | - | 2.5W (Ta) | 150°C | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 20V 3.2A CHIPFET |
25.188 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Tj) | 1.8V, 4.5V | 80mOhm @ 3.2A, 4.5V | 1.5V @ 250µA | 7.4nC @ 4.5V | ±8V | 680pF @ 10V | Schottky Diode (Isolated) | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | ChipFET™ | 8-SMD, Flat Lead |
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Infineon Technologies |
MOSFET N-CH 20V 3.8A SC-59 |
49.332 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 3.8A (Ta) | 2.5V, 4.5V | 21mOhm @ 3.8A, 4.5V | 1.2V @ 30µA | 8.8nC @ 4.5V | ±12V | 1147pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SC-59 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 30V 2.5A 6-TSOP |
92.610 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4.5V, 10V | 100mOhm @ 3.5A, 10V | 3V @ 250µA | 13nC @ 10V | ±20V | 480pF @ 5V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 3.5A UFM |
29.460 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 3.5A (Ta) | 4.5V, 10V | 69mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | ±20V | 430pF @ 15V | - | 1.8W (Ta) | 175°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 25V 2.5A DPAK |
3.474 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 2.5A (Ta) | 4.5V, 10V | 95mOhm @ 5A, 10V | 2V @ 250µA | 1.8nC @ 5V | ±20V | 115pF @ 20V | - | 1.04W (Ta), 20.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V 620MA SC-59-3 |
218.232 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 620mA (Ta) | 4.5V, 10V | 800mOhm @ 620mA, 10V | 2V @ 160µA | 6nC @ 10V | ±20V | 176pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 10.5A 8SOIC |
83.856 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 10.5A (Ta) | 4.5V, 10V | 14mOhm @ 11.6A, 10V | 3V @ 250µA | 24nC @ 10V | ±20V | 1200pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 100V 6.5A SOT223 |
38.694 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 6.5A (Tc) | 4.5V, 10V | 95mOhm @ 5A, 10V | 2.5V @ 250µA | 9.3nC @ 10V | ±20V | 1480pF @ 50V | - | 9W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 20V 3.7A SC-59 |
213.516 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 3.7A (Ta) | 1.8V, 2.5V | 23mOhm @ 3.7A, 2.5V | 750mV @ 30µA | 4.7nC @ 2.5V | ±8V | 1447pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SC-59 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 30V 4A MCPH3 |
90.972 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 1.8V, 4.5V | 50mOhm @ 2A, 4.5V | 1.3V @ 1mA | 4.7nC @ 4.5V | ±12V | 430pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 20V 2.5A 6TSOP |
24.516 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 2.5V, 4.5V | 45mOhm @ 5.1A, 4.5V | 1.2V @ 250µA | 15nC @ 4.5V | ±12V | 750pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 |
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Vishay Siliconix |
MOSFET N-CH 40V 12A SC-70 |
157.470 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 12A (Tc) | 2.5V, 10V | 26mOhm @ 9A, 10V | 1.4V @ 250µA | 21.5nC @ 10V | ±12V | 700pF @ 20V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Vishay Siliconix |
MOSFET P-CH 20V 15.4A 8SOIC |
53.232 |
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TrenchFET® Gen III | P-Channel | MOSFET (Metal Oxide) | 20V | 15.4A (Tc) | 1.8V, 4.5V | 14mOhm @ 9A, 4.5V | 1V @ 250µA | 99nC @ 8V | ±8V | 3250pF @ 10V | - | 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 20V 4.7A SOT23 |
147.648 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 4.7A (Ta) | 1.8V, 4.5V | 39mOhm @ 4.7A, 4.5V | 1V @ 250µA | 12.5nC @ 4.5V | ±8V | 1020pF @ 10V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 3.2A SOT-26 |
25.938 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 3.2A (Ta) | 1.5V, 4.5V | 60mOhm @ 6A, 4.5V | 1V @ 250µA | - | ±8V | 476pF @ 15V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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Rohm Semiconductor |
MOSFET N-CH 30V 2.5A TSMT3 |
777.492 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 2.5V, 4.5V | 92mOhm @ 2.5A, 4.5V | 1.5V @ 1mA | 4.6nC @ 4.5V | 12V | 220pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Diodes Incorporated |
MOSFET N-CH 40V 6-UDFN |
337.674 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 8A (Ta) | 4.5V, 10V | 20mOhm @ 8A, 10V | 2.4V @ 250µA | 19.1nC @ 10V | ±20V | 1060pF @ 20V | - | 660mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
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Vishay Siliconix |
MOSFET P-CH 12V 7.1A SOT-23 |
167.328 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 7.1A (Tc) | 1.8V, 4.5V | 35mOhm @ 5.1A, 4.5V | 1V @ 250µA | 25nC @ 4.5V | ±8V | 1225pF @ 6V | - | 1.25W (Ta), 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 200V 600MA 6-TSOP |
27.246 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 600mA (Ta) | 10V | 2.2Ohm @ 360mA, 10V | 5.5V @ 250µA | 3.9nC @ 10V | ±30V | 88pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 20V 9A SC70 |
146.628 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 9A (Tc) | 2.5V, 4.5V | 35mOhm @ 5A, 4.5V | 1.2V @ 250µA | 30nC @ 10V | ±12V | 885pF @ 10V | - | 2.9W (Ta), 15.6W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Vishay Siliconix |
MOSFET P-CH 30V 3A SC70 |
21.888 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 3A (Tc) | 4.5V, 10V | 175mOhm @ 2A, 10V | 2V @ 250µA | 6.5nC @ 4.5V | ±20V | 205pF @ 25V | - | 3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
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ON Semiconductor |
MOSFET P-CH 30V 1.6A SC70-6 |
205.926 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 1.6A (Ta) | 4.5V, 10V | 190mOhm @ 1.6A, 10V | 3V @ 250µA | 5nC @ 10V | ±20V | 165pF @ 15V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-88 (SC-70-6) | 6-TSSOP, SC-88, SOT-363 |
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ON Semiconductor |
MOSFET N-CH 30V 5.5A SSOT-6 |
53.682 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 5.5A (Ta) | 4.5V, 10V | 26mOhm @ 6.2A, 10V | 2V @ 250µA | 21nC @ 4.5V | ±12V | 1460pF @ 15V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 30V 4.5A SC-70-6 |
317.052 |
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LITTLE FOOT® | P-Channel | MOSFET (Metal Oxide) | 30V | 4.5A (Tc) | 2.5V, 10V | 65mOhm @ 3A, 10V | 1.3V @ 250µA | 23nC @ 10V | ±12V | 600pF @ 15V | Schottky Diode (Isolated) | 1.9W (Ta), 6.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual |
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Vishay Siliconix |
MOSFET N-CH 8V 1.34A SC-89-6 |
152.814 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 8V | 1.34A (Ta) | 1.5V, 4.5V | 86mOhm @ 1.34A, 4.5V | 900mV @ 250µA | 11.6nC @ 5V | ±5V | 585pF @ 4V | - | 236mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-6 | SOT-563, SOT-666 |