Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 61/999
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-23 |
25.914 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Ta) | 0V, 10V | 3.5Ohm @ 160mA, 10V | 2.4V @ 26µA | 1.4nC @ 5V | ±20V | 39pF @ 25V | Depletion Mode | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET P-CH 60V 1.5A TSMT |
80.838 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 1.5A (Ta) | 4V, 10V | 280mOhm @ 1.5A, 10V | 3V @ 1mA | 10nC @ 10V | ±20V | 500pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 8SOIC |
24.708 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 17mOhm @ 11A, 10V | 2.3V @ 250µA | 34nC @ 10V | ±25V | 1180pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 30V 5.1A 6-TSOP |
162.876 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 5.1A (Tc) | 4.5V, 10V | 74mOhm @ 4.1A, 10V | 3V @ 250µA | 15nC @ 10V | ±20V | 450pF @ 15V | - | 2W (Ta), 3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 30V 3.5A SOT23-3 |
87.636 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Tc) | 4.5V, 10V | 88mOhm @ 3.5A, 10V | 3V @ 250µA | 6.2nC @ 4.5V | ±20V | 340pF @ 15V | - | 1.1W (Ta), 1.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 240MA SOT323-3 |
55.596 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 240mA (Ta) | 3V, 10V | 2.5Ohm @ 250mA, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | ±20V | - | - | 280mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 | SC-70, SOT-323 |
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Vishay Siliconix |
MOSFET P-CH 20V 5.97A 6TSOP |
44.550 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 5.97A (Tc) | 2.5V, 4.5V | 60mOhm @ 4.7A, 4.5V | 1.5V @ 250µA | 12.4nC @ 5V | ±12V | 610pF @ 10V | - | 2W (Ta), 3.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 20V 350MA SC89-3 |
208.152 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 350mA (Ta) | 1.8V, 4.5V | 1.2Ohm @ 350mA, 4.5V | 450mV @ 250µA (Min) | 1.5nC @ 4.5V | ±6V | - | - | 250mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
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Rohm Semiconductor |
MOSFET N-CH 20V 1.5A TUMT3 |
151.056 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.8V, 4.5V | 180mOhm @ 1.5A, 4.5V | 1V @ 1mA | 2.5nC @ 4.5V | ±10V | 110pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
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Vishay Siliconix |
MOSFET N-CH 30V MICRO FOOT |
686.598 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | - | 2.5V, 10V | 109mOhm @ 1A, 10V | 1.4V @ 250µA | 8nC @ 10V | ±12V | 195pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA |
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Infineon Technologies |
MOSFET P-CH 20V 6.9A 6TSOP |
47.556 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 6.9A (Ta) | 2.5V, 4.5V | 32mOhm @ 6.9A, 4.5V | 1.1V @ 10µA | 12nC @ 4.5V | ±12V | 905pF @ 10V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 |
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Diodes Incorporated |
MOSFET N-CH 60V 0.47A SOT23 |
58.038 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 470mA (Ta) | 3V, 5V | 1.8Ohm @ 150mA, 5V | 2V @ 1mA | 0.74nC @ 5V | ±12V | 12.9pF @ 12V | - | 390mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 100V 170MA SOT23 |
139.098 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 0V, 10V | 6Ohm @ 170mA, 10V | 1.8V @ 50µA | 2.8nC @ 7V | ±20V | 68pF @ 25V | Depletion Mode | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 16V 2.5A X2-DFN2015 |
47.088 |
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- | P-Channel | MOSFET (Metal Oxide) | 16V | 2.5A (Ta) | 1.8V, 4.5V | 39mOhm @ 4A, 4.5V | 1V @ 250µA | 10nC @ 4.5V | ±8V | 282pF @ 10V | - | 650mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN2015-3 | 3-XDFN |
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Texas Instruments |
MOSFET P-CH 12V |
194.802 |
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FemtoFET™ | P-Channel | MOSFET (Metal Oxide) | 12V | 5.4A (Ta) | 1.5V, 4.5V | 35mOhm @ 1A, 4.5V | 950mV @ 250µA | 4.2nC @ 4.5V | -6V | 628pF @ 6V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
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Texas Instruments |
20V P-CHANNEL FEMTOFET |
142.122 |
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FemtoFET™ | P-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 1.8V, 8V | 35mOhm @ 900mA, 8V | 1.3V @ 250µA | 3.5nC @ 4.5V | -12V | 533pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
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Vishay Siliconix |
MOSFET N-CH 8V MICROFOOT |
107.040 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 8V | - | 1.2V, 4.5V | 54mOhm @ 1A, 4.5V | 700mV @ 250µA | 6.5nC @ 4.5V | ±5V | - | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA |
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Vishay Siliconix |
MOSFET N-CH 30V 8A 6-TSOP |
24.840 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8A (Tc) | 4.5V, 10V | 26mOhm @ 7.2A, 10V | 2.5V @ 250µA | 12.5nC @ 10V | ±20V | 405pF @ 15V | - | 3.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET P-CH 100V 0.7A CPH3 |
55.410 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 700mA (Ta) | 4V, 10V | 1.7Ohm @ 700mA, 10V | 2.6V @ 1mA | 3.7nC @ 10V | ±20V | 142pF @ 20V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET P-CH 20V 3.2A TO-236AB |
23.274 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 1.8V, 4.5V | 66mOhm @ 3.2A, 4.5V | 900mV @ 250µA | 15.7nC @ 4.5V | ±8V | 24pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 20V 2.6A SC70-6 |
203.262 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 2.6A (Ta) | 1.8V, 4.5V | 95mOhm @ 2.6A, 4.5V | 1.5V @ 250µA | 10.8nC @ 4.5V | ±8V | 560pF @ 10V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-88 (SC-70-6) | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
MOSFET P-CH 20V 4.4A SOT-23 |
822.528 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 4.4A (Tc) | 1.5V, 4.5V | 61mOhm @ 3.2A, 4.5V | 1V @ 250µA | 21nC @ 8V | ±8V | - | - | 1.25W (Ta), 1.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 9A 8SOP |
107.826 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 16mOhm @ 9A, 10V | 1.6V @ 250µA | 9.47nC @ 5V | ±25V | 798pF @ 10V | - | 1.46W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 5X6DFN |
25.770 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 30A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.5V @ 250µA | 24nC @ 10V | ±20V | 1380pF @ 15V | - | 2.3W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Infineon Technologies |
MOSFET N-CH 250V 100MA SOT23 |
330.744 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 250V | 100mA (Ta) | 0V, 10V | 14Ohm @ 100µA, 10V | 1V @ 56µA | 3.5nC @ 5V | ±20V | 76pF @ 25V | Depletion Mode | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 250V 140MA SC-59-3 |
69.168 |
|
SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 250V | 140mA (Ta) | 2.8V, 10V | 11Ohm @ 140mA, 10V | 1V @ 130µA | 4.8nC @ 10V | ±20V | 109pF @ 25V | - | 500mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SC-59 | TO-236-3, SC-59, SOT-23-3 |
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|
ON Semiconductor |
MOSFET N-CH 30V 1.4A SSOT3 |
91.764 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 4.5V, 10V | 110mOhm @ 1.4A, 10V | 3V @ 250µA | 1.8nC @ 4.5V | ±20V | 193pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
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|
Vishay Siliconix |
MOSFET N-CH 100V 3.8A TSOP-6 |
25.278 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 3.8A (Tc) | 4.5V, 10V | 126mOhm @ 2A, 10V | 3V @ 250µA | 10.4nC @ 10V | ±20V | 196pF @ 50V | - | 3.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET NCH 600V 2.6A SOT223 |
22.122 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 2.6A (Tc) | 10V | 3.4Ohm @ 500mA, 10V | 3.5V @ 40µA | 4.6nC @ 10V | ±20V | 93pF @ 100V | Super Junction | 5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | SOT-223-3 |
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Vishay Siliconix |
MOSFET P-CHAN 30V SOT23 |
91.296 |
|
Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Tc) | 4.5V, 10V | 170mOhm @ 1.8A, 10V | 2.5V @ 250µA | 6.8nC @ 10V | ±20V | 210pF @ 25V | - | 1.9W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-236 (SOT-23) | TO-236-3, SC-59, SOT-23-3 |