Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 285/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET N-CH 55V 75A TO-220AB |
8.700 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 275nC @ 20V | ±20V | 4000pF @ 25V | - | 325W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 500V 13A TO220-3 |
11.328 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 520µA | 36nC @ 10V | ±20V | 1420pF @ 100V | Super Junction | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-220-3 |
8.874 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 225mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | ±20V | 996pF @ 400V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 8.5A TO220FP |
6.390 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 8.5A (Tc) | 10V | 280mOhm @ 5.1A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 570pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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ON Semiconductor |
MOSFET N-CH 150V 37A TO-220AB |
13.704 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 5A (Ta), 37A (Tc) | 6V, 10V | 36mOhm @ 16A, 10V | 4V @ 250µA | 51nC @ 10V | ±20V | 2800pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 64A TO220AB |
9.192 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 64A (Tc) | 7.5V, 10V | - | 4V @ 250µA | 48nC @ 10V | ±20V | 1950pF @ 100V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 800V 8A TO-220 |
14.526 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 630mOhm @ 4A, 10V | 5V @ 100µA | 15nC @ 10V | ±30V | 427pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V TO-3PN |
6.072 |
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π-MOSVIII | N-Channel | MOSFET (Metal Oxide) | 900V | 7A (Ta) | 10V | 2Ohm @ 3.5A, 10V | 4V @ 700µA | 32nC @ 10V | ±30V | 1350pF @ 25V | - | 200W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 650V 19A TO220F-3 |
17.472 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 19A (Tc) | 10V | 165mOhm @ 9.5A, 10V | 4.5V @ 1.9mA | 35nC @ 10V | ±30V | 1415pF @ 400V | - | 35W (Tc) | -55°C ~ 150°C | Through Hole | TO-220F-3 | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 100A TO-220 |
7.416 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 2.7mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | ±20V | 10500pF @ 30V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 20A TO220FM |
14.292 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 196mOhm @ 9.5A, 10V | 5V @ 1mA | 40nC @ 10V | ±20V | 1550pF @ 25V | Schottky Diode (Isolated) | 68W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 9.5A TO220-FP |
13.968 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190mOhm @ 7.6A, 10V | 4.5V @ 630µ | 37nC @ 10V | ±20V | 1750pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 60V 37A TO220FP |
16.992 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 37A (Tc) | 10V | 18mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 65A TO-220 |
7.128 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 65A (Tc) | 10V | 4.8mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | ±20V | 5400pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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IXYS |
MOSFET P-CH 65V 28A TO-220 |
5.418 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 65V | 28A (Tc) | 10V | 45mOhm @ 14A, 10V | 4.5V @ 250µA | 46nC @ 10V | ±15V | 2030pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 120V 100A TO220-3 |
7.248 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 100A (Tc) | 10V | 7.6mOhm @ 100A, 10V | 4V @ 130µA | 101nC @ 10V | ±20V | 6640pF @ 60V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH 200V 48A TO-220 |
8.514 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 200V | 48A (Tc) | 10V | 50mOhm @ 24A, 10V | 4.5V @ 250µA | 60nC @ 10V | ±30V | 3000pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 80V 120A TO-220AB |
9.984 |
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STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 3.9mOhm @ 60A, 10V | 4.5V @ 250µA | 120nC @ 10V | ±20V | 8710pF @ 40V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 800V 2A TO-220FM |
10.824 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 4.3Ohm @ 1A, 10V | 5V @ 1mA | 12.7nC @ 10V | ±30V | 210pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 18A TO220 |
8.784 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 18A (Tc) | 10V | 270mOhm @ 10A, 10V | 5V @ 250µA | 76nC @ 10V | ±30V | 2942pF @ 25V | - | 223W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 14A TO-220 |
14.448 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Ta), 80A (Tc) | 4.5V, 10V | 6mOhm @ 80A, 10V | 2.5V @ 250µA | 145nC @ 10V | ±20V | 9160pF @ 15V | - | 242W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 6.5A TO220 |
6.840 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 800V | 6.5A (Ta) | 10V | 950mOhm @ 3.3A, 10V | 4V @ 280µA | 13nC @ 10V | ±20V | 700pF @ 300V | - | 110W (Tc) | 150°C | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
N-CHANNEL 800 V, 0.75 OHM TYP., |
6.174 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 900V | 7A (Tc) | 10V | 810mOhm @ 4A, 10V | 5V @ 100µA | 17.7nC @ 10V | ±30V | 425pF @ 10V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET N-CH 600V 10A D2-PAK |
6.576 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 740mOhm @ 5A, 10V | 5.5V @ 1mA | 32nC @ 10V | ±30V | 1610pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 110A TO-220AB |
6.750 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 8mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | ±20V | 3247pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 140A TO220 |
21.528 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Ta), 140A (Tc) | 6V, 10V | 2.5mOhm @ 20A, 10V | 3.2V @ 250µA | 180nC @ 10V | ±20V | 14200pF @ 30V | - | 1.9W (Ta), 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 85A TO-220 |
15.552 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 85A (Tc) | 10V | 10mOhm @ 42.5A, 10V | 4V @ 250µA | 112nC @ 10V | ±25V | 4120pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
N-CHANNEL 800 V, 0.5 OHM TYP., 7 |
7.056 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 900V | 7A (Tc) | 10V | - | 5V @ 100µA | - | ±30V | - | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Rohm Semiconductor |
NCH 600V 20A POWER MOSFET |
15.036 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 196mOhm @ 9.5A, 10V | 5V @ 1mA | 40nC @ 10V | ±20V | 1550pF @ 25V | - | 231W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 55V 75A TO-220AB |
13.440 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 210nC @ 20V | ±20V | 3200pF @ 25V | - | 285W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |