Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 284/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 900V 6.9A TO220-3 |
19.716 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 6.9A (Tc) | 10V | 800mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42nC @ 10V | ±20V | 1100pF @ 100V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 30V 260A TO-220AB |
18.348 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 260A (Tc) | 4.5V, 10V | 3mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | ±20V | 5890pF @ 15V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 9A TO-220AB |
17.868 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 4V, 5V | 400mOhm @ 5.4A, 5V | 2V @ 250µA | 40nC @ 10V | ±10V | 1100pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 40V 195A TO220 |
17.112 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.6mOhm @ 100A, 10V | 3.9V @ 250µA | 324nC @ 10V | ±20V | 10820pF @ 25V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 90A TO262-3-1 |
8.892 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 2.5mOhm @ 90A, 10V | 4V @ 95µA | 118nC @ 10V | ±20V | 9430pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 200V 25A TO-220AB |
6.984 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 25A (Tc) | 10V | 72.5mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | ±20V | 1710pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5A TO-220SIS |
2.100 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 8A (Ta) | 10V | 840mOhm @ 4A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 800V 7A TO-220FP |
21.708 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 900mOhm @ 3.5A, 10V | 5V @ 100µA | 12nC @ 10V | ±30V | 340pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 500V 16A TO-220F |
12.048 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 380mOhm @ 8A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 1945pF @ 25V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V TO220SIS |
6.264 |
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π-MOSVIII | N-Channel | MOSFET (Metal Oxide) | 800V | 10A (Ta) | 10V | 1Ohm @ 5A, 10V | 4V @ 1mA | 46nC @ 10V | ±30V | 2000pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 250V 7.9A TO220FP |
20.184 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 7.9A (Tc) | 10V | 280mOhm @ 4.7A, 10V | 4V @ 250µA | 68nC @ 10V | ±20V | 1300pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 100V 64A TO220-FP |
16.764 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 64A (Tc) | 6V, 10V | 4.5mOhm @ 64A, 10V | 3.5V @ 150µA | 117nC @ 10V | ±20V | 8410pF @ 50V | - | 39W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 200V 5.9A TO220FP |
8.604 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 5.9A (Tc) | 10V | 400mOhm @ 3.5A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 800pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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ON Semiconductor |
MOSFET N-CH 150V 45.6A TO-220 |
23.412 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 45.6A (Tc) | 10V | 42mOhm @ 22.8A, 10V | 4V @ 250µA | 110nC @ 10V | ±25V | 3250pF @ 25V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 11A EP TO220AB |
8.652 |
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MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 378mOhm @ 5.5A, 10V | 4V @ 250µA | 17nC @ 10V | ±25V | 590pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 800V 6.6A TO-220 |
6.930 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 800V | 6.6A (Tc) | 10V | 1.9Ohm @ 3.3A, 10V | 5V @ 250µA | 35nC @ 10V | ±30V | 1680pF @ 25V | - | 167W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 11.4A TO220 |
11.340 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | ±20V | 1100pF @ 100V | - | 104.2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 24A TO220FM |
10.140 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | 5V @ 1mA | 45nC @ 10V | ±20V | 2000pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 80V 100A TO220-3 |
7.212 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 6V, 10V | 3.75mOhm @ 100A, 10V | 3.5V @ 155µA | 117nC @ 10V | ±20V | 8110pF @ 40V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 17A TO-220AB |
8.472 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 17A (Tc) | 4V, 5V | 180mOhm @ 10A, 5V | 2V @ 250µA | 66nC @ 5V | ±10V | 1800pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 800V 13A TO220-3 |
7.398 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 13A (Tc) | 10V | 360mOhm @ 5.6A, 10V | 3.5V @ 280µA | 30nC @ 10V | ±20V | 930pF @ 500V | - | 84W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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STMicroelectronics |
N-CHANNEL 900 V, 2.1 OHM TYP., 3 |
7.656 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 900V | 6A (Tc) | 10V | 1.1Ohm @ 3A, 10V | 5V @ 100µA | - | ±30V | - | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 100A TO-220 |
6.588 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 10V | 2.3mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | ±20V | 10500pF @ 30V | - | 255W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 800V 8A TO220FP |
22.308 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 650mOhm @ 5.1A, 10V | 3.9V @ 470µA | 60nC @ 10V | ±20V | 1100pF @ 100V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 13A TO220FP |
9.144 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 4V @ 250µA | 21.5nC @ 10V | ±25V | 791pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 800V 8A TO-220F |
17.952 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 1.55Ohm @ 4A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 2050pF @ 25V | - | 59W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Texas Instruments |
MOSFET P-CH 15V 2.3A 8-SOIC |
12.804 |
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- | P-Channel | MOSFET (Metal Oxide) | 15V | 2.3A (Ta) | 2.7V, 10V | 90mOhm @ 2.5A, 10V | 1.5V @ 250µA | 11.25nC @ 10V | +2V, -15V | - | - | 791mW (Ta) | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
N-CHANNEL 900 V, 2.1 OHM TYP., 3 |
16.548 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 900V | 6A (Tc) | 10V | 1.1Ohm @ 3A, 10V | 5V @ 100µA | - | ±30V | - | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET NCH 135V 129A TO220 |
8.892 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 135V | 129A (Tc) | 10V | 8.4mOhm @ 77A, 10V | 4V @ 250µA | 270nC @ 10V | ±20V | 9700pF @ 50V | - | 441W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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STMicroelectronics |
N-CHANNEL 900 V, 2.1 OHM TYP., 3 |
6.036 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 900V | 6A (Tc) | 10V | 1.1Ohm @ 3A, 10V | 5V @ 100µA | - | ±30V | - | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Full Pack, I²Pak |