Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 282/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A TO-220AB |
13.296 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4.5V @ 250µA | 22nC @ 10V | ±30V | 600pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 800V 5A TO220 |
9.888 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 5A (Tc) | 10V | 2.08Ohm @ 2.5A, 10V | 5V @ 1mA | 21nC @ 10V | ±30V | 485pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET N-CH 60V 100A TO220-3 |
8.154 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3.65mOhm @ 100A, 10V | 4V @ 250µA | 95.4nC @ 10V | ±20V | 4556pF @ 30V | - | 2.3W (Ta), 113W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 17A D2PAK |
6.312 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 17A (Tc) | 4V, 5V | 180mOhm @ 10A, 5V | 2V @ 250µA | 66nC @ 5V | ±10V | 1800pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO220-3 |
19.272 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 118µA | 165nC @ 10V | ±20V | 13000pF @ 30V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 24A TO-220AB |
19.668 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 100mOhm @ 14A, 10V | 5.5V @ 250µA | 86nC @ 10V | ±30V | 1960pF @ 25V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 42A TO-247AC |
18.216 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 36mOhm @ 23A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 1900pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 8A TO220FP |
14.736 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Tc) | 4V, 5V | 200mOhm @ 4.8A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 27W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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IXYS |
MOSFET N-CH 100V 60A TO-263 |
9.012 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 10V | 18mOhm @ 25A, 10V | 4.5V @ 50µA | 49nC @ 10V | ±30V | 2650pF @ 25V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1000V 0.1A DPAK |
6.780 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 100mA (Tc) | 10V | 80Ohm @ 100mA, 10V | 4.5V @ 25µA | 6.9nC @ 10V | ±20V | 54pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 33A TO-220AB |
7.416 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 56mOhm @ 20A, 10V | 5.5V @ 250µA | 90nC @ 10V | ±30V | 2020pF @ 25V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 10.6A TO220-FP |
8.688 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 320µA | 32nC @ 10V | ±20V | 700pF @ 100V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 80V 60A TO220-3 |
17.028 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 60A (Tc) | 6V, 10V | 5.7mOhm @ 60A, 10V | 3.5V @ 90µA | 69nC @ 10V | ±20V | 4750pF @ 40V | - | 39W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 100V 4.5A TO220FP |
17.292 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.5A (Tc) | 10V | 540mOhm @ 2.7A, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 27W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V TO220SIS |
6.600 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Ta) | 10V | 520mOhm @ 6A, 10V | 4V @ 1.2mA | 40nC @ 10V | ±30V | 1300pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 80V 80A TO-220 |
17.424 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 80V | 80A (Tc) | 10V | 7.5mOhm @ 40A, 10V | 4.5V @ 250µA | 46.8nC @ 10V | ±20V | 3435pF @ 40V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
12.972 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 60V | 68A (Tc) | 4.5V, 10V | 7.2mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | ±20V | 3280pF @ 30V | - | 36W (Tc) | 175°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 200V 3.6A I-PAK |
11.964 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 3.6A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 340pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N CH 40V 195A TO-262 |
8.124 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.8mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | ±20V | 7330pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 100V 81A TO220 |
18.648 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 81A (Tc) | 10V | 10mOhm @ 40A, 10V | 4V @ 250µA | 154nC @ 10V | ±20V | 3900pF @ 30V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Microchip Technology |
MOSFET N-CH 100V 1.2A TO92-3 |
18.384 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.2A (Tj) | 5V, 10V | 350mOhm @ 4A, 10V | 2.4V @ 10mA | - | ±20V | 500pF @ 25V | - | 740mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET N-CH 150V 29A TO-220AB |
8.520 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 4A (Ta), 29A (Tc) | 6V, 10V | 54mOhm @ 9A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 1770pF @ 25V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 90A TO220-3 |
6.972 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 2.3mOhm @ 90A, 10V | 4V @ 95µA | 120nC @ 10V | ±20V | 10000pF @ 20V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 100V 23A TO262-3 |
17.040 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 117mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 1450pF @ 25V | - | 3.1W (Ta), 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 800V 11A TO220 |
14.520 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 450mOhm @ 4.5A, 10V | 3.5V @ 220µA | 24nC @ 10V | ±20V | 770pF @ 500V | Super Junction | 29W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 800V 11A TO220-3 |
9.480 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 450mOhm @ 4.5A, 10V | 3.5V @ 220µA | 24nC @ 10V | ±20V | 770pF @ 500V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-31 Full Pack | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A TO-220SIS |
7.344 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 450mOhm @ 4.9A, 10V | 4.5V @ 500µA | 25nC @ 10V | ±30V | 720pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A TO-220AB |
20.808 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 42nC @ 10V | ±30V | 1036pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 105V 41A TO-220AB |
15.420 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 105V | 5.9A (Ta), 41A (Tc) | 6V, 10V | 33mOhm @ 41A, 10V | 4V @ 250µA | 37nC @ 10V | ±20V | 1670pF @ 25V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 11.1A TO-220 |
7.212 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 11.1A (Ta) | 10V | 390mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | ±30V | 890pF @ 300V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |