Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 280/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 400V 350MA 4-DIP |
21.528 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 350mA (Ta) | 10V | 3.6Ohm @ 210mA, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 170pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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ON Semiconductor |
MOSFET N-CH 150V 15A TO-220F |
14.244 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 15A (Tc) | 10V | 40mOhm @ 15A, 10V | 4V @ 250µA | 18.6nC @ 10V | ±20V | 1285pF @ 75V | - | 22W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 4.9A TO220-FP |
7.716 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 4.9A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12nC @ 10V | ±20V | 557pF @ 100V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 80V 70A TO220-3 |
7.056 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 70A (Tc) | 6V, 10V | 10mOhm @ 46A, 10V | 3.5V @ 46µA | 35nC @ 10V | ±20V | 2410pF @ 40V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 250V 6A TO-220F |
18.588 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 250V | 6A (Tc) | 10V | 620mOhm @ 3A, 10V | 5V @ 250µA | 38nC @ 10V | ±30V | 1180pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET NCH 300V 14A TO220F |
23.016 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 14A (Tc) | 10V | 290mOhm @ 7A, 10V | 5V @ 250µA | 25nC @ 10V | ±30V | 1060pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Microchip Technology |
MOSFET P-CH 500V 0.1A TO92-3 |
16.980 |
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- | P-Channel | MOSFET (Metal Oxide) | 500V | 100mA (Tj) | 4.5V, 10V | 30Ohm @ 100mA, 10V | 3.5V @ 1mA | - | ±20V | 190pF @ 25V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Vishay Siliconix |
MOSFET N-CH 60V 8A TO220FP |
17.736 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Tc) | 10V | 200mOhm @ 4.8A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 27W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 100V 14A D2PAK |
16.824 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | ±20V | 670pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 11A D2PAK |
6.840 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 11A (Tc) | 10V | 280mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 570pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 500V 9A TO-220F |
19.248 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 9A (Tc) | 10V | 850mOhm @ 4.5A, 10V | 5V @ 250µA | 24nC @ 10V | ±30V | 1170pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 10A TO220F |
15.096 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Ta), 41A (Tc) | 6V, 10V | 10mOhm @ 20A, 10V | 3.4V @ 250µA | 52nC @ 10V | ±20V | 2785pF @ 50V | - | 2.2W (Ta), 36.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Microchip Technology |
MOSFET P-CH 400V 0.18A TO92-3 |
8.688 |
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- | P-Channel | MOSFET (Metal Oxide) | 400V | 180mA (Tj) | 2.5V, 10V | 15Ohm @ 300mA, 10V | 2V @ 1mA | - | ±20V | 300pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Rohm Semiconductor |
MOSFET N-CH 200V 30A TO220 |
7.254 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 30A (Tc) | 10V | 80mOhm @ 15A, 10V | 5V @ 1mA | 60nC @ 10V | ±30V | 3200pF @ 25V | - | 2.23W (Ta), 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 900V 4A TO-220 |
15.996 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 4A (Tc) | 10V | 4.2Ohm @ 2A, 10V | 5V @ 250µA | 22nC @ 10V | ±30V | 960pF @ 25V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 56.6A TO220 |
15.204 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 56.6A (Tc) | 7.5V, 10V | 6.1mOhm @ 30A, 10V | 4V @ 250µA | 81nC @ 10V | ±20V | 3300pF @ 50V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 500V 800MA TO220AB |
8.436 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 800mA (Tc) | - | 4.6Ohm @ 400mA, 0V | - | 12.7nC @ 5V | ±20V | 312pF @ 25V | Depletion Mode | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 42A IPAK |
17.688 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 4.5V, 10V | 14mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | ±16V | 3980pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 400V 10.5A TO-220 |
7.044 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 10.5A (Tc) | 10V | 530mOhm @ 5.25A, 10V | 4V @ 250µA | 35nC @ 10V | ±30V | 1090pF @ 25V | - | 135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V TO220SIS |
8.460 |
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π-MOSVIII | N-Channel | MOSFET (Metal Oxide) | 900V | 7A (Ta) | 10V | 2Ohm @ 3.5A, 10V | 4V @ 700µA | 32nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 800V 8A TO220-3 |
17.100 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20nC @ 10V | ±20V | 570pF @ 500V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 11A TO220FM |
11.928 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 390mOhm @ 3.8A, 10V | 5V @ 1mA | 22nC @ 10V | ±20V | 740pF @ 25V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Texas Instruments |
MOSFET P-CH 15V 1.6A 8-SOIC |
9.000 |
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- | P-Channel | MOSFET (Metal Oxide) | 15V | 1.6A (Ta) | 2.7V, 10V | 180mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45nC @ 10V | +2V, -15V | - | - | 791mW (Ta) | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 60V 11A TO-220AB |
8.928 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 11A (Tc) | 10V | 280mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 570pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 80A TO220-3 |
18.768 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2.7mOhm @ 80A, 10V | 2.2V @ 90µA | 140nC @ 10V | ±16V | 9750pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 200V 19A TO-220F |
9.084 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 19A (Tc) | 10V | 170mOhm @ 9.5A, 10V | 4V @ 250µA | 53nC @ 10V | ±30V | 1080pF @ 25V | - | 43W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 250V 15.6A TO-220F |
9.312 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 15.6A (Tc) | 10V | 270mOhm @ 7.8A, 10V | 4V @ 250µA | 53.5nC @ 10V | ±30V | 1080pF @ 25V | - | 43W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Texas Instruments |
MOSFET N-CH 40V 300A 8VSON |
20.616 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 300A (Tc) | 4.5V, 10V | 0.96mOhm @ 32A, 10V | 2.3V @ 250µA | 153nC @ 10V | ±20V | 11400pF @ 20V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 100V 57A TO-220 |
17.772 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 57A (Tc) | 10V | 23mOhm @ 28.5A, 10V | 4V @ 250µA | 110nC @ 10V | ±25V | 3300pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CHANNEL 650V 18A TO220 |
19.692 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 180mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | ±20V | 1081pF @ 400V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |