Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 278/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 800V 4A TO220 |
22.296 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | 3.5V @ 70µA | 10nC @ 10V | ±20V | 250pF @ 500V | Super Junction | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 7.7A I-PAK |
6.336 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 10V | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 800V 5.8A D2PAK |
15.720 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 800V | 5.8A (Tc) | 10V | 1.95Ohm @ 2.9A, 10V | 5V @ 250µA | 31nC @ 10V | ±30V | 1500pF @ 25V | - | 3.13W (Ta), 158W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 4.4A TO220-FP |
8.592 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | ±20V | 280pF @ 100V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 800V 3A TO-220 |
14.376 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4.8Ohm @ 1.5A, 10V | 5V @ 250µA | 16.5nC @ 10V | ±30V | 705pF @ 25V | - | 107W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 500V 7.5A TO-220FP |
8.820 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 7.5A (Tc) | 13V | 280mOhm @ 4.2A, 13V | 3.5V @ 350µA | 32.6nC @ 10V | ±20V | 773pF @ 100V | - | 30.4W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 60V 6.7A D2PAK |
18.888 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO220-3 |
10.800 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | 4V @ 58µA | 82nC @ 10V | ±20V | 6600pF @ 30V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 800V 4.5A TO220 |
7.320 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 4.5A (Tc) | 10V | 1.2Ohm @ 1.7A, 10V | 3.5V @ 80µA | 11nC @ 10V | ±20V | 300pF @ 500V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 58A TO220-3 |
8.484 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 58A (Tc) | 6V, 10V | 12.3mOhm @ 46A, 10V | 3.5V @ 46µA | 35nC @ 10V | ±20V | 2500pF @ 50V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO220-3 |
10.260 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 5mOhm @ 80A, 10V | 2.2V @ 58µA | 50nC @ 4.5V | ±20V | 8400pF @ 30V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A TO220SIS |
8.910 |
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DTMOSV | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | ±30V | 590pF @ 300V | - | 30W | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Nexperia |
MOSFET N-CH 60V 92A TO220AB |
9.960 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 92A (Tc) | 10V | 7.8mOhm @ 25A, 10V | 4V @ 1mA | 38.7nC @ 10V | ±20V | 2651pF @ 30V | - | 149W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 120V 60A TO-220 |
7.656 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 120V | 60A (Tc) | 10V | 13.8mOhm @ 16A, 10V | 4V @ 500µA | 34nC @ 10V | ±20V | 2000pF @ 60V | - | 98W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 400V 6A TO-220 |
17.700 |
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FRFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 6A (Tc) | 10V | 1.1Ohm @ 3A, 10V | 4V @ 250µA | 20nC @ 10V | ±30V | 625pF @ 25V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Microchip Technology |
MOSFET P-CH 200V 0.175A TO92-3 |
16.140 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 175mA (Tj) | 5V, 10V | 12Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 400V 0.086A TO92-3 |
8.292 |
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- | P-Channel | MOSFET (Metal Oxide) | 400V | 86mA (Tj) | 4.5V, 10V | 25Ohm @ 100mA, 10V | 2.4V @ 1mA | - | ±20V | 125pF @ 25V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET N-CH 60V 22.5A TO-220F |
18.540 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 22.5A (Tc) | 5V, 10V | 35mOhm @ 11.3A, 10V | 2.5V @ 250µA | 20nC @ 5V | ±20V | 1040pF @ 25V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 500V 8A TO220F |
7.656 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4A, 10V | 5V @ 250µA | 18nC @ 10V | ±25V | 735pF @ 25V | - | 40.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 500V 5A TO-220F |
15.396 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.4Ohm @ 2.5A, 10V | 4V @ 250µA | 24nC @ 10V | ±30V | 625pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 (Y-Forming) | TO-220-3 Full Pack, Formed Leads |
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Infineon Technologies |
MOSFET N-CH 55V 21A TO220FP |
16.980 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 21A (Tc) | 10V | 40mOhm @ 11A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CHANNEL 600V 12A TO220 |
19.464 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18nC @ 10V | ±20V | 761pF @ 400V | - | 24W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Nexperia |
MOSFET N-CH 200V 32.7A TO220AB |
6.540 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 32.7A (Tc) | 10V | 77mOhm @ 15A, 10V | 4V @ 1mA | 32.2nC @ 10V | ±20V | 1870pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Microchip Technology |
MOSFET N-CH 500V 50MA TO92-3 |
18.420 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 50mA (Tj) | 5V, 10V | 60Ohm @ 50mA, 10V | 4V @ 1mA | - | ±20V | 55pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET N-CH 30V 40A TO-220 |
14.760 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 18mOhm @ 20A, 10V | 3V @ 250µA | 17nC @ 5V | ±20V | 1160pF @ 15V | - | 60W (Tc) | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Microchip Technology |
MOSFET N-CH 240V 0.19A TO92-3 |
16.092 |
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- | N-Channel | MOSFET (Metal Oxide) | 240V | 190mA (Tj) | 2.5V, 10V | 6Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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IXYS |
MOSFET N-CH 100V 44A TO-220 |
6.336 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 44A (Tc) | 10V | 30mOhm @ 22A, 10V | 4.5V @ 25µA | 33nC @ 10V | ±30V | 1262pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 162A D2PAK |
17.280 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 162A (Tc) | 10V | 4mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7360pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 10A TO-220 |
8.154 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4.5V @ 250µA | 40nC @ 10V | ±30V | 1600pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 50V 5.3A I-PAK |
16.212 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 5.3A (Tc) | 10V | 500mOhm @ 2.8A, 10V | 4V @ 250µA | 9.1nC @ 10V | ±20V | 240pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |