Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 276/999
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 100A TO3P(L) |
6.462 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 100A (Ta) | 10V | 18mOhm @ 50A, 10V | 3.7V @ 5mA | 360nC @ 10V | ±30V | 15000pF @ 30V | Super Junction | 797W (Tc) | 150°C (TJ) | Through Hole | TO-3P(L) | TO-3PL |
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IXYS |
MOSFET N-CH 800V 27A SOT-227B |
7.398 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 27A (Tc) | 10V, 15V | 300mOhm @ 13.5A, 10V | 4.5V @ 8mA | 400nC @ 10V | ±20V | 9740pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
850V/65A ULTRA JUNCTION X-CLASS |
4.392 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 65A (Tc) | 10V | 65mOhm @ 33A, 10V | 5.5V @ 8mA | 230nC @ 10V | ±30V | 8900pF @ 25V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
200V/300A ULTRA JUNCTION X3-CLAS |
8.424 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 300A (Tc) | 10V | 3.5mOhm @ 150A, 10V | 4.5V @ 8mA | 375nC @ 10V | ±20V | 23800pF @ 25V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 2500V 1.5A TO-268HV |
6.732 |
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- | N-Channel | MOSFET (Metal Oxide) | 2500V | 1.5A (Tc) | 10V | 40Ohm @ 750mA, 10V | 4V @ 250µA | 41nC @ 10V | ±20V | 1660pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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STMicroelectronics |
MOSFET N-CH 500V 53A ISOTOP |
8.910 |
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PowerMESH™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 53A (Tc) | 10V | 80mOhm @ 27A, 10V | 4V @ 250µA | 434nC @ 10V | ±30V | 11200pF @ 25V | - | 460W (Tc) | 150°C (TJ) | Chassis Mount | ISOTOP® | ISOTOP |
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IXYS |
MOSFET N-CH |
5.940 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 170A (Tc) | 10V | 13mOhm @ 85A, 10V | 5V @ 8mA | 434nC @ 10V | ±30V | 27000pF @ 25V | - | 1170W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
850V/90A ULT JUNC X-C HIPERFET P |
8.136 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 90A (Tc) | 10V | 41mOhm @ 500mA, 10V | 5.5V @ 8mA | 340nC @ 10V | ±30V | 13300pF @ 25V | - | 1200W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 600V 70A SOT-227B |
4.266 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 80mOhm @ 35A, 10V | 5V @ 8mA | 265nC @ 10V | ±30V | 7200pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 1000V 30A SOT-227 |
5.760 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 30A (Tc) | 20V | 450mOhm @ 15A, 20V | 5.5V @ 250µA | 545nC @ 20V | ±30V | 13700pF @ 25V | - | 800W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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GeneSiC Semiconductor |
TRANS SJT 1.2KV 50A |
6.024 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | 7209pF @ 800V | - | 583W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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Texas Instruments |
MOSFET N-CH 30V 35A 8VSON |
12.780 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 7.3mOhm @ 10A, 10V | 1.9V @ 250µA | 22.2nC @ 10V | ±20V | 1590pF @ 15V | - | 3.2W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (3x3.15) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 30V 5.6A 8-SOIC |
11.688 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 5.6A (Ta) | 4.5V, 10V | 40mOhm @ 4.2A, 10V | 1V @ 250µA | 29.6nC @ 10V | ±20V | 1022pF @ 15V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Texas Instruments |
30V N-CHANNEL NEXFET POWER MOSFE |
15.708 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 3.8mOhm @ 16A, 10V | 1.7V @ 250µA | 54nC @ 10V | ±20V | 3640pF @ 15V | - | 2.8W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (3x3.15) | 8-PowerVDFN |
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Microchip Technology |
MOSFET N-CH 450V 0.136A TO92-3 |
14.484 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 136mA | 0V | 20Ohm @ 150mA, 0V | - | - | ±20V | 360pF @ 25V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3 |
12.474 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 350mA (Tj) | 4.5V, 10V | 3Ohm @ 500mA, 10V | 2V @ 500µA | - | ±20V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 500V 3.7A TO-220FP |
17.040 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 3.7A (Tc) | 13V | 950mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | 231pF @ 100V | - | 25.7W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 25V 11.2A IPAK |
14.844 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 11.2A (Ta), 73A (Tc) | 4.5V, 10V | 6.2mOhm @ 30A, 10V | 2.5V @ 250µA | 19.2nC @ 4.5V | ±20V | 1563pF @ 12V | - | 1.3W (Ta), 54.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Vishay Siliconix |
MOSFET N-CH 200V 4.8A DPAK |
9.408 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 4.8A (Tc) | 10V | 800mOhm @ 2.9A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 600V 4A TO220F |
8.040 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.2Ohm @ 2A, 10V | 4.5V @ 250µA | 18nC @ 10V | ±30V | 615pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 100V 13A I-PAK |
20.892 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 760pF @ 25V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 100V 9.4A I-PAK |
12.588 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 9.4A (Tc) | 10V | 210mOhm @ 5.6A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 330pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Microchip Technology |
MOSFET P-CH 90V 0.25A TO92-3 |
7.752 |
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- | P-Channel | MOSFET (Metal Oxide) | 90V | 250mA (Tj) | 5V, 10V | 8Ohm @ 500mA, 10V | 3.5V @ 1mA | - | ±20V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
7.524 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 10V | 540mOhm @ 2.6A, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 16A TO220F |
7.272 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 7A (Ta), 22A (Tc) | 4.5V, 10V | 19mOhm @ 20A, 10V | 2.5V @ 250µA | 20nC @ 10V | ±20V | 950pF @ 30V | - | 2.1W (Ta), 23.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET NCH 600V 8.4A TO220 |
20.472 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 8.4A (Tc) | 10V | 800mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2nC @ 10V | ±20V | 373pF @ 100V | Super Junction | 27W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Microchip Technology |
MOSFET N-CH 100V 350MA TO92-3 |
16.452 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 350mA (Tj) | 4.5V, 10V | 3Ohm @ 500mA, 10V | 2V @ 500µA | - | ±20V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 5A TO-220 |
15.600 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 4.5V @ 250µA | 19nC @ 10V | ±30V | 620pF @ 25V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 40V 120A D2PAK |
16.020 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 6V, 10V | 2.5mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | ±20V | 4730pF @ 25V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 100V 3.1A DPAK |
19.884 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 3.1A (Tc) | 10V | 1.2Ohm @ 1.9A, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | 200pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |