Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 175/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Alpha & Omega Semiconductor |
100V N-CHANNEL ALPHASGT TM |
21.642 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 31.3A (Ta), 100A (Tc) | 6V, 10V | 3.6mOhm @ 20A, 10V | 3.6V @ 250µA | 95nC @ 10V | ±20V | 5325pF @ 50V | - | 6.2W (Ta), 215W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (5x6) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 600V 2A I-PAK |
27.594 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.4Ohm @ 1.2A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 50V 8.2A DPAK |
29.076 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 8.2A (Tc) | 10V | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 10nC @ 10V | ±20V | 250pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
650V 7A SINGLE N-CHANNEL POWER M |
31.578 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 1.35Ohm @ 1.8A, 10V | 3.8V @ 250µA | 25nC @ 10V | ±30V | 1124pF @ 50V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
600V 7A SINGLE N-CHANNEL POWER M |
30.708 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 1.2Ohm @ 2A, 10V | 3.8V @ 250µA | 25nC @ 10V | ±30V | 1108pF @ 50V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 250V 630MA 4-DIP |
23.130 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 630mA (Ta) | 10V | 1.1Ohm @ 380mA, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Taiwan Semiconductor Corporation |
500V, 9A, 0.9O SINGLE N-CHANNEL |
31.698 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 9A (Tc) | 10V | 900mOhm @ 2.3A, 10V | 3.8V @ 250µA | 24.5nC @ 10V | ±30V | 1116pF @ 50V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 950V 6A TO251 |
20.238 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 6A (Tc) | 10V | 1.2Ohm @ 2.7A, 10V | 3.5V @ 140µA | 15nC @ 10V | ±20V | 478pF @ 400V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 200V 4.8A I-PAK |
26.532 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 4.8A (Tc) | 10V | 800mOhm @ 2.9A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 600V 2.4A TO-220 |
62.178 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 2.4A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4.5V @ 50µA | 11.8nC @ 10V | ±30V | 311pF @ 25V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V IPAK |
18.990 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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STMicroelectronics |
MOSFET N-CH 525V 2.5A TO220 |
37.554 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 525V | 2.5A (Tc) | 10V | 2.6Ohm @ 1.25A, 10V | 4.5V @ 50µA | 11nC @ 10V | ±30V | 334pF @ 100V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 250V 2.7A I-PAK |
28.422 |
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- | P-Channel | MOSFET (Metal Oxide) | 250V | 2.7A (Tc) | 10V | 3Ohm @ 1.7A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 220pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 200V 30A D2PAK |
63.366 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 30A (Tc) | 10V | 75mOhm @ 15A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 1597pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 3.8A I-PAK |
24.180 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 3.8A (Tc) | 10V | 1.1Ohm @ 2.3A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 800V 2.8A IPAK |
21.954 |
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E | N-Channel | MOSFET (Metal Oxide) | 800V | 2.8A (Tc) | 10V | 2.75Ohm @ 1A, 10V | 4V @ 250µA | 19.6nC @ 10V | ±30V | 315pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Long Leads, IPak, TO-251AB |
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STMicroelectronics |
MOSFET N-CH 30V 75A TO-220AB |
14.682 |
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DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 4.5V, 10V | 5.9mOhm @ 37.5A, 10V | 2.5V @ 250µA | 23.8nC @ 4.5V | ±20V | 2030pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 620V 6A TO-251 |
25.506 |
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- | N-Channel | MOSFET (Metal Oxide) | 620V | 6A (Tc) | 10V | 900mOhm @ 3A, 10V | 4V @ 250µA | 34nC @ 10V | ±30V | 578pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 800V 6A IPAK |
17.250 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 850mOhm @ 3A, 10V | 4.5V @ 600µA | 29nC @ 10V | ±20V | 1315pF @ 100V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET P-CH 200V 1.9A I-PAK |
20.892 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 1.9A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 4V @ 250µA | 8.9nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N CH 60V 77A TO-220 |
16.698 |
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DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 60V | 77A (Tc) | 10V | 7mOhm @ 38.5A, 10V | 4V @ 250µA | 76nC @ 10V | ±20V | 5300pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 150V 6A POWERFLAT |
29.628 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 150V | 25A (Tc) | 10V | 57mOhm @ 3A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 1300pF @ 25V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Texas Instruments |
MOSFET N-CH 60V 100A TO220-3 |
27.576 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 72A (Ta), 100A (Tc) | 4.5V, 10V | 6.3mOhm @ 75A, 10V | 2.3V @ 250µA | 34nC @ 10V | ±20V | 3025pF @ 30V | - | 192W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 5.6A I-PAK |
25.746 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 60V 14A I-PAK |
15.846 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4V, 5V | 100mOhm @ 8.4A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
TRENCH 8 80V NFET |
17.292 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 80V | 28A (Ta), 203A (Tc) | 10V | 2.1mOhm @ 50A, 10V | 4V @ 330µA | 85nC @ 10V | ±20V | 5530pF @ 40V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Vishay Siliconix |
MOSFET N-CHAN 200V PPAK SO-8DC |
59.808 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 8.9A (Ta), 39.6A (Tc) | 7.5V, 10V | 31.9mOhm @ 10A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 1380pF @ 100V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 20V 60A POLARPAK |
24.726 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 2.5V, 10V | 1.4mOhm @ 25A, 10V | 2V @ 250µA | 300nC @ 10V | ±12V | 13000pF @ 10V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) |
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ON Semiconductor |
MOSFET N-CH 40V 110A TO263AB |
17.502 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 110A (Tc) | 10V | 1.8mOhm @ 80A, 10V | 4V @ 250µA | 138nC @ 10V | ±20V | 7710pF @ 25V | - | 176W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Taiwan Semiconductor Corporation |
500V 13A SINGLE N-CHANNEL POWER |
31.842 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 480mOhm @ 3.3A, 10V | 3.8V @ 250µA | 39nC @ 10V | ±30V | 1877pF @ 50V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |