Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 178/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH TO263-3 |
13.242 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 31A (Tc) | 10V | 99mOhm @ 10.5A, 10V | 4V @ 530µA | 45nC @ 10V | ±20V | 1952pF @ 400V | - | 117W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 800V 7A I2PAKFP |
16.038 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 900mOhm @ 3.5A, 10V | 5V @ 100µA | 12nC @ 10V | ±30V | 340pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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ON Semiconductor |
NMOS TOLL 40V 1.2 MOHM |
17.814 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 0.75mOhm @ 80A, 10V | 4V @ 250µA | 188nC @ 10V | ±20V | 12000pF @ 25V | - | 357W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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STMicroelectronics |
MOSFET N-CH 600V 16A POWERFLAT |
21.852 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 3.3A (Ta), 16A (Tc) | 10V | 215mOhm @ 8A, 10V | 5V @ 250µA | 46nC @ 10V | ±25V | 1400pF @ 50V | - | 3W (Ta), 125W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 800V 6A I2PAKFP |
13.626 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 950mOhm @ 3A, 10V | 5V @ 100µA | 16.5nC @ 10V | ±30V | 450pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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STMicroelectronics |
MOSFET N-CH 800V 4.5A I2PAK-FP |
14.580 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4.5A (Tc) | 10V | 1.6Ohm @ 2A, 10V | 5V @ 100µA | 13nC @ 10V | 30V | 270pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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STMicroelectronics |
MOSFET N-CH 600V 6.5A TO220FP |
12.456 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 6.5A (Tc) | 10V | 745mOhm @ 3.25A, 10V | 4V @ 250µA | 17.4nC @ 10V | ±25V | 452pF @ 50V | - | 25W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CHAN 600V DPAK TO-252 |
21.162 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 240mOhm @ 5.5A, 10V | 5V @ 250µA | 23nC @ 10V | ±30V | 783pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 4VSON |
28.956 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 33A (Tc) | 10V | 105mOhm @ 10.5A, 10V | 4V @ 530µA | 45nC @ 10V | ±20V | 1952pF @ 400V | - | 137W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Vishay Siliconix |
MOSFET N-CH 650V 15A PWRPAK 8X8 |
29.640 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 260mOhm @ 7A, 10V | 4V @ 250µA | 96nC @ 10V | ±30V | 1712pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 600V 10A I2PAK FP |
13.038 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 4.5A, 10V | 4.5V @ 250µA | 70nC @ 10V | ±30V | 1370pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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Vishay Siliconix |
MOSFET N-CH 600V 1.7A TO220FP |
15.852 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 1.7A (Tc) | 10V | 4.4Ohm @ 1A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
MOSFET N CH 600V 18A TO281 |
9.552 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 4V @ 250µA | 29nC @ 10V | ±25V | 1060pF @ 100V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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STMicroelectronics |
MOSFET N-CH 650V I2PAK-FP |
8.040 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 33.3nC @ 10V | ±25V | 983pF @ 50V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
16.212 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
16.512 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 42nC @ 10V | ±30V | 1036pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
21.450 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 4V, 5V | 200mOhm @ 4.6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
R6007JNX IS A POWER MOSFET WITH |
21.210 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 15V | 780mOhm @ 3.5A, 15V | 7V @ 1mA | 17.5nC @ 15V | ±30V | 475pF @ 100V | - | 46W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N CH 650V 11A I2PAKFP |
16.008 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 340mOhm @ 5.5A, 10V | 5V @ 250µA | 22nC @ 10V | ±25V | 816pF @ 100V | - | 30W (Tc) | 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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Infineon Technologies |
MOSFET NCH 650V 66A PG-HDSOP-10 |
16.350 |
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CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 102mOhm @ 7.8A, 10V | 4V @ 390µA | 34nC @ 10V | ±20V | 1320pF @ 400V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
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ON Semiconductor |
MOSFET N-CH 100V 35A TO-220F |
18.858 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 23mOhm @ 17.5A, 10V | 4V @ 250µA | 110nC @ 10V | ±25V | 3300pF @ 25V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 100V 120A TO262-3 |
11.916 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 3.8mOhm @ 20A, 10V | 3.5V @ 250µA | 190nC @ 10V | ±20V | 7230pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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STMicroelectronics |
MOSFET N-CH 650V 12A D2PAK |
22.620 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 45nC @ 10V | ±25V | 1300pF @ 50V | - | 125W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 120A TO220AB |
9.132 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 7.5V, 10V | 2.4mOhm @ 30A, 10V | 4V @ 250µA | 128nC @ 10V | ±20V | - | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 10A IPAK |
25.362 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 550mOhm @ 4A, 10V | 4V @ 250µA | 19nC @ 10V | ±25V | 540pF @ 50V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Rohm Semiconductor |
R6009JNX IS A POWER MOSFET WITH |
18.864 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 15V | 585mOhm @ 4.5A, 15V | 7V @ 1.38mA | 22nC @ 15V | ±30V | 645pF @ 100V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 15A TO220AB |
13.716 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 78nC @ 10V | ±30V | 1350pF @ 100V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-262 |
17.808 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1100pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 24A ITO220S |
8.424 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 150mOhm @ 4.3A, 10V | 4V @ 250µA | 43nC @ 10V | ±30V | 1765pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-220 |
18.354 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29nC @ 10V | ±20V | 1100pF @ 100V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |