Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 180/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET N-CH 650V 24A |
18.684 |
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FRFET®, SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 150mOhm @ 12A, 10V | 5V @ 540µA | 43nC @ 10V | ±30V | 1985pF @ 400V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 13A I2PAK FP |
14.742 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 550mOhm @ 4.5A, 10V | 4.5V @ 100µA | 92nC @ 10V | ±30V | 2030pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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Vishay Siliconix |
MOSFET N-CH TO-220 FULLPAK |
14.262 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 180mOhm @ 9.5A, 10V | 5V @ 250µA | 33nC @ 10V | ±30V | 1085pF @ 100V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC |
11.100 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 400mOhm @ 7A, 10V | 5V @ 250µA | 58nC @ 10V | ±30V | 1144pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 1500V 2.5A TO3PF3 |
9.276 |
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- | N-Channel | MOSFET (Metal Oxide) | 1500V | 2.5A (Ta) | 10V | 10.5Ohm @ 1.25A, 10V | - | 34nC @ 10V | ±30V | 650pF @ 30V | - | 3W (Ta), 50W (Tc) | 150°C (TJ) | Through Hole | TO-3P(L) | TO-3PL |
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Vishay Siliconix |
MOSFET N-CH 60V 120A TO220AB |
8.628 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 3.5mOhm @ 30A, 10V | 2.5V @ 250µA | 330nC @ 10V | ±20V | 14700pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 586A PG-HSOG-8-1 |
16.302 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 300A (Tc) | 4.5V, 10V | 0.72mOhm @ 100A, 10V | 2.4V @ 250µA | 269nC @ 4.5V | ±20V | 16000pF @ 20V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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STMicroelectronics |
MOSFET N CH 500V 12A I2PAK |
17.364 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 320mOhm @ 6A, 10V | 4V @ 100µA | 27nC @ 10V | ±25V | 816pF @ 50V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CHAN 100 V TO-220 |
7.980 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 150A (Tc) | 7.5V, 10V | 3.18mOhm @ 30A, 10V | 4V @ 250µA | 214nC @ 10V | ±20V | 10870pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 15A TO220AB |
18.948 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 96nC @ 10V | ±30V | 1640pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 55V 80A I2PAK |
22.188 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 6.5mOhm @ 40A, 10V | 4V @ 250µA | 189nC @ 10V | ±20V | 4400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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STMicroelectronics |
MOSFET N-CH 40V 120A TO-220 |
15.132 |
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Automotive, AEC-Q101, STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4.6mOhm @ 50A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 5100pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO247-3 |
11.484 |
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CoolMOS™ CFD7 | N-Channel | MOSFET (Metal Oxide) | 650V | 14A (Tc) | 10V | 170mOhm @ 6A, 10V | 4.5V @ 300µA | 28nC @ 10V | ±20V | 1199pF @ 400V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 16A D2PAK |
20.208 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 380mOhm @ 8A, 10V | 5V @ 250µA | 68nC @ 10V | ±30V | 1900pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 650V 19.8A POWERPAK |
27.006 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 19.8A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 102nC @ 10V | ±30V | 2396pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 75V 120A TO-220-3 |
13.506 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 2.35mOhm @ 75A, 10V | 3.8V @ 250µA | 195nC @ 10V | ±20V | 13765pF @ 37.5V | - | 245W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 16A D2PAK |
29.664 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 220mOhm @ 8A, 10V | 4V @ 100µA | 44nC @ 10V | ±30V | 1300pF @ 50V | - | 125W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 650V 14.9A TO220F |
19.920 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 14.9A (Tc) | 10V | 150mOhm @ 12A, 10V | 5V @ 2.4mA | 94nC @ 10V | ±20V | 3737pF @ 100V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 20A I2PAKFP |
15.972 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 165mOhm @ 11A, 10V | 4V @ 250µA | - | ±25V | - | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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ON Semiconductor |
MOSFET N-CH 600V 13A TO220F |
19.788 |
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SuperMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 258mOhm @ 6.5A, 10V | 4V @ 250µA | 39.5nC @ 10V | ±30V | 1765pF @ 100V | - | 33.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 100V 30A TO-220FP |
20.496 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 30A (Tc) | 10V | 18mOhm @ 15A, 10V | 4.5V @ 250µA | 25nC @ 10V | 20V | 1640pF @ 50V | - | 25W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
SUPERFET3 650V FRFET,190M |
8.124 |
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FRFET®, SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 430µA | 34nC @ 10V | ±30V | 1610pF @ 400V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 650V 24A TO220 |
15.084 |
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HiPerFET™, Polar™ | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 150mOhm @ 12A, 10V | 5V @ 2.4mA | 93nC @ 10V | ±20V | 3737pF @ 100V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 550V 13A TO220FP |
12.216 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 550V | 16A (Tc) | 10V | 192mOhm @ 8A, 10V | 5V @ 250µA | 31nC @ 10V | ±25V | 1260pF @ 100V | - | 25W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO220 |
1.962 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | - | 180mOhm @ 11A, 10V | 4V @ 250µA | 86nC @ 10V | - | 1920pF @ 100V | - | - | - | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CHAN 800V TO-220FP |
20.832 |
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E | N-Channel | MOSFET (Metal Oxide) | 800V | 12A (Tc) | 10V | 440mOhm @ 5.5A, 10V | 4V @ 250µA | 88nC @ 10V | ±30V | 1670pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET NCH 650V 83A PG-HDSOP-10 |
14.322 |
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CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 80mOhm @ 9.7A, 10V | 4V @ 490µA | 42nC @ 10V | ±20V | 1640pF @ 400V | - | 174W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
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ON Semiconductor |
MOSFET N-CH 600V 13A TO220 |
10.020 |
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SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 258mOhm @ 6.5A, 10V | 4V @ 250µA | 39.5nC @ 10V | ±30V | 1765pF @ 100V | - | 116W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
18.456 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 650V 17A I2PAK |
19.740 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 17A (Tc) | 10V | 179mOhm @ 8.5A, 10V | 5V @ 250µA | 50nC @ 10V | ±25V | 1950pF @ 100V | - | 125W (Tc) | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |