Transistoren - FETs, MOSFETs - Arrays
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Arrays
Datensätze 3.829
Seite 22/128
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | FET-Funktion | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Eingangskapazität (Ciss) (Max) @ Vds | Leistung - max | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Diodes Incorporated |
MOSFET 2N-CH 20V 9.5A 8SO |
25.644 |
|
- | 2 N-Channel (Dual) | Standard | 20V | 9.5A | 16mOhm @ 9.4A, 4.5V | 1.5V @ 250µA | 26nC @ 10V | 1149pF @ 10V | 1.28W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Taiwan Semiconductor Corporation |
MOSFET 2 N-CH 60V 4.5A 8SOP |
43.050 |
|
- | 2 N-Channel (Dual) | Standard | 60V | 4.5A (Ta) | 55mOhm @ 4.5A, 10V | 3V @ 250µA | 18nC @ 10V | 910pF @ 24V | 2.4W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Diodes Incorporated |
MOSFET N/P-CH 40V 8SOIC |
19.356 |
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- | N and P-Channel | Logic Level Gate | 40V | 6.5A, 4.8A | 28mOhm @ 6A, 10V | 3V @ 250µA | 12.9nC @ 10V | 604pF @ 20V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 5A/4.5A SOP8 |
19.740 |
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- | N and P-Channel | Logic Level Gate | 30V | 5A, 4.5A | 51mOhm @ 5A, 10V | 2.5V @ 1mA | 3.9nC @ 5V | 230pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Vishay Siliconix |
MOSFET 2 N-CH 30V POWERPAK SO8 |
94.296 |
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TrenchFET® | 2 N-Channel (Dual) | Standard | 30V | 8A (Tc) | 18mOhm @ 11A, 10V | 2.7V @ 250µA | 11nC @ 4.5V | 1050pF @ 30V | 22W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
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Taiwan Semiconductor Corporation |
MOSFET 2 P-CH 30V 7.1A 8SOP |
24.012 |
|
- | 2 P-Channel (Dual) | Standard | 30V | 7.1A (Ta) | 25mOhm @ 7.1A, 10V | 3V @ 250µA | 33nC @ 10V | 1900pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET N/P-CH 100V 2A/1.5A TSMT8 |
26.082 |
|
- | N and P-Channel | Logic Level Gate | 100V | 2A, 1.5A | 325mOhm @ 2A, 10V | 2.5V @ 1mA | 4.7nC @ 5V | 290pF @ 25V | 1.5W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Vishay Siliconix |
MOSFET 2 N-CH 25V 8-POWERPAIR |
23.052 |
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TrenchFET® Gen IV | 2 N-Channel (Dual) | Standard | 25V | 40A (Tc), 60A (Tc) | 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V | 2.2V @ 250µA | 19nC @ 10V, 41nC @ 10V | 925pF @ 10V, 2150pF @ 10V | 20.2W, 40W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PowerPair® (6x5) |
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Panasonic Electronic Components |
MOSFET 2N-CH 24V 8A WMINI8-F1 |
25.758 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 24V | 8A | 15mOhm @ 4A, 4.5V | 1.5V @ 1mA | - | - | 1W | -40°C ~ 85°C (TJ) | Surface Mount | 8-SMD, Flat Lead | WMini8-F1 |
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EPC |
GAN TRANS 2N-CH 100V BUMPED DIE |
62.904 |
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eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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EPC |
GAN TRANS 2N-CH 120V BUMPED DIE |
92.868 |
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eGaN® | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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EPC |
GANFET 2 N-CH 30V 9.5A/38A DIE |
26.922 |
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eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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EPC |
GANFET 2 N-CHANNEL 60V 23A DIE |
53.898 |
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eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A (Tj) | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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EPC |
GAN TRANS ASYMMETRICAL HALF BRID |
35.766 |
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eGaN® | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5mOhm @ 20A, 5V | 2.5V @ 2mA | 2.7nC @ 5V | 300pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Sanken |
MOSFET 6N-CH 60V 7A 15-SIP |
18.420 |
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- | 6 N-Channel (3-Phase Bridge) | Standard | 60V | 7A | 100mOhm @ 3.5A, 10V | 2V @ 250µA | - | 660pF @ 10V | 5W | 150°C (TJ) | Through Hole | 15-SIP Exposed Tab, Formed Leads | 15-ZIP |
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Sanken |
MOSFET 3N/3P-CH 500V 1.5A 12-SIP |
7.848 |
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- | 3 N and 3 P-Channel (3-Phase Bridge) | Standard | 500V | 1.5A | - | - | - | - | - | - | Through Hole | 12-SIP | 12-SIP |
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Sanken |
MOSFET 3N/3P-CH 600V 7A 15-SIP |
1.112 |
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- | 3 N and 3 P-Channel (3-Phase Bridge) | Standard | 600V | 7A | - | - | - | - | - | - | Through Hole | 15-SIP Exposed Tab, Formed Leads | 15-ZIP |
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Diodes Incorporated |
MOSFET 2N-CH 50V 0.36A SOT363 |
238.782 |
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- | 2 N-Channel (Dual) | Logic Level Gate | 50V | 360mA | 1.6Ohm @ 500mA, 10V | 1.5V @ 250µA | 0.6nC @ 4.5V | 46pF @ 25V | 310mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH X 2 VDS |
73.368 |
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- | 2 N-Channel (Dual) | Standard | 20V | 100mA (Ta) | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | 9.3pF @ 3V | 150mW (Ta) | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH X 2 VDS |
28.596 |
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- | 2 N-Channel (Dual) | Standard | 30V | 100mA (Ta) | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 8.5pF @ 3V | 200mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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Diodes Incorporated |
MOSFET N-CHAN 41V 60V SOT363 |
43.566 |
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Automotive, AEC-Q101 | 2 N-Channel (Dual) | Standard | 60V | 305mA (Ta) | 2Ohm @ 500mA, 10V | 2.5V @ 1mA | 0.304nC @ 4.5V | 50pF @ 25V | 200mW | -65°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH X 2 VDS |
48.372 |
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- | 2 P-Channel (Dual) | Silicon Carbide (SiC) | 30V | 100mA | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | - | 9.1pF @ 3V | 200mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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ON Semiconductor |
MOSFET 2N-CH 60V 0.295A SC88 |
87.984 |
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- | 2 N-Channel (Dual) | Standard | 60V | 295mA | 1.6Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.9nC @ 4.5V | 26pF @ 20V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 |
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Toshiba Semiconductor and Storage |
MOSFET 2 N-CHANNEL 20V 250MA ES6 |
30.672 |
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- | 2 N-Channel (Dual) | Logic Level Gate, 1.2V Drive | 20V | 250mA (Ta) | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | 250mW | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH X 2 VDS |
81.318 |
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U-MOSVII | 2 P-Channel (Dual) | Logic Level Gate, 1.2V Drive | 20V | 250mA (Ta) | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | - | 42pF @ 10V | 150mW (Ta) | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 |
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Micro Commercial Co |
N-CHANNEL MOSFET EFFECT,SOT-363 |
229.338 |
|
- | 2 N-Channel (Dual) | Standard | 60V | 340mA | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | 40pF @ 10V | 150mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.1A US6 |
22.386 |
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- | 2 N-Channel (Dual) | Standard | 20V | 100mA | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | 9.3pF @ 3V | 200mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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Toshiba Semiconductor and Storage |
X34 SMALL LOW RON DUAL NCH MOSFE |
29.406 |
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- | 2 N-Channel (Dual) | Standard | 50V | 100mA (Ta) | 20Ohm @ 10mA, 4V | 1.5V @ 1µA | - | 7pF @ 3V | 200mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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Micro Commercial Co |
N AND P-CHANNEL MOSFETSOT-363 |
275.718 |
|
- | N and P-Channel | Logic Level Gate | 20V | 750mA, 660mA | 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V | 1.1V @ 250µA | - | 120pF, 113pF @ 16V | 150mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Micro Commercial Co |
N/P-CHANNELMOSFETSOT-563 |
299.100 |
|
- | N and P-Channel | Logic Level Gate | 20V | 750mA, 660mA | 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V | 1V @ 250µA, 1.1V @ 250µA | - | 120pF, 170pF @ 16V | - | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |