WeEn Semiconductors Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerWeEn Semiconductors
Datensätze 134
Seite 1/5
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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WeEn Semiconductors |
DIODE GEN PURP 600V 9A TO220F |
33.312 |
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- | Standard | 600V | 9A | 1.26V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 50µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 200V 14A TO220AC |
30.612 |
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- | Standard | 200V | 14A | 1.05V @ 14A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 50µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 5A DPAK |
23.388 |
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- | Standard | 600V | 5A | 1.3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 10A TO220AC |
29.616 |
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- | Standard | 600V | 10A | 2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 8A TO220AC |
6.797 |
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- | Standard | 600V | 8A | 1.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 18ns | 20µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 500V 10A TO220AC |
30.912 |
|
- | Standard | 500V | 10A | 2.9V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 200µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 500V 14A TO220AC |
14.346 |
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- | Standard | 500V | 14A | 1.38V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 50µA @ 500V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 9A TO220F |
15.462 |
|
- | Standard | 600V | 9A | 1.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 15A TO220AC |
36.024 |
|
- | Standard | 600V | 15A | 1.38V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 50µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 30A TO220F |
27.324 |
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- | Standard | 600V | 30A | 1.8V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 10A TO220-2 |
28.608 |
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- | Standard | 600V | 10A | 2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 8A TO220F |
32.046 |
|
- | Standard | 600V | 8A | 1.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 18ns | 20µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 8A TO220F |
31.332 |
|
- | Standard | 600V | 8A | 2.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 52ns | 150µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 15A TO220F |
38.880 |
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- | Standard | 600V | 15A | 3.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 18ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 15A TO220F |
35.790 |
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- | Standard | 600V | 15A | 1.38V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 50µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 500V 20A TO220F |
30.954 |
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- | Standard | 500V | 20A | 2.9V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 200µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 500V 5A TO220AC |
66.336 |
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- | Standard | 500V | 5A | 2.9V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 5A DPAK |
2.916 |
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- | Standard | 600V | 5A | 1.9V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 200V 8A DPAK |
3.492 |
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- | Standard | 200V | 8A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 500V 15A TO220AC |
29.802 |
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- | Standard | 500V | 15A | 2.9V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 200µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 500V 20A TO220AC |
50.520 |
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- | Standard | 500V | 20A | 2.9V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 200µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 30A TO247-2 |
22.824 |
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- | Standard | 600V | 30A | 2.75V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 10µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | 175°C (Max) |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 4A TO220AC |
33.960 |
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- | Silicon Carbide Schottky | 650V | 4A | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 170µA @ 650V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 6A TO220AC |
41.106 |
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- | Silicon Carbide Schottky | 650V | 6A | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 190pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 10A TO220AC |
38.298 |
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- | Silicon Carbide Schottky | 650V | 10A | 1.85V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 230µA @ 650V | 250pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 10A TO220AC |
475 |
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- | Silicon Carbide Schottky | 650V | 10A | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 200V 8A TO220AC |
6.060 |
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- | Standard | 200V | 8A | 1.05V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 400V 9A TO220AC |
23.460 |
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- | Standard | 400V | 9A | 1.25V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 50µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 500V 9A TO220AC |
16.644 |
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- | Standard | 500V | 9A | 1.25V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 50µA @ 500V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 500V 9A D2PAK |
931 |
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- | Standard | 500V | 9A | 1.25V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 50µA @ 500V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 150°C (Max) |