WeEn Semiconductors Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerWeEn Semiconductors
Datensätze 134
Seite 4/5
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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WeEn Semiconductors |
DIODE GEN PURP 600V 75A TO247-2 |
2.466 |
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- | Standard | 600V | 75A | 2.75V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 1.2KV 16A TO247-2 |
3.582 |
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- | Standard | 1200V | 16A | 2.7V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 105ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247-2 | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 800V 8A TO220F |
7.668 |
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- | Standard | 800V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 10µA @ 800V | - | Through Hole | TO-220-2 Full Pack | TO-220F | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 15A TO220F |
3.582 |
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- | Standard | 600V | 15A | 1.38V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 10A DPAK |
2.916 |
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- | Standard | 600V | 10A | 2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP TO220F |
3.222 |
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- | - | - | - | - | - | - | - | - | - | - | - | - |
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WeEn Semiconductors |
DIODE GEN PURP 600V 60A TO247-2 |
3.240 |
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- | Standard | 600V | 60A | 2V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 10µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 30A D2PAK |
7.758 |
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- | Standard | 600V | 30A | 2.75V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 30A TO220AC |
6.624 |
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- | Standard | 600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 30A D2PAK |
6.660 |
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- | Standard | 600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 30A TO-3P |
3.492 |
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- | Standard | 600V | 30A | 1.8V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 10µA @ 600V | - | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 30A TO247-2 |
2.394 |
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- | Standard | 600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 30A TO220F |
7.650 |
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- | Standard | 600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | 175°C (Max) |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 4A D2PAK |
8.208 |
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- | Silicon Carbide Schottky | 650V | 4A | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 170µA @ 650V | 130pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 4A DPAK |
6.912 |
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- | Silicon Carbide Schottky | 650V | 4A | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 170µA @ 650V | 130pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 4A TO220F |
6.282 |
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- | Silicon Carbide Schottky | 650V | 4A | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 170µA @ 650V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | 175°C (Max) |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 6A D2PAK |
4.176 |
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- | Silicon Carbide Schottky | 650V | 6A | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 190pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 6A DPAK |
5.850 |
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- | Silicon Carbide Schottky | 650V | 6A | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 190pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 6A TO220F |
5.490 |
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- | Silicon Carbide Schottky | 650V | 6A | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 190pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | 175°C (Max) |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 8A D2PAK |
601 |
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- | Silicon Carbide Schottky | 650V | 8A | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 230µA @ 650V | 260pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 8A DPAK |
4.878 |
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- | Silicon Carbide Schottky | 650V | 8A | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 230µA @ 650V | 260pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 8A TO220F |
8.550 |
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- | Silicon Carbide Schottky | 650V | 8A | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 230µA @ 650V | 260pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | 175°C (Max) |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 10A D2PAK |
6.354 |
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- | Silicon Carbide Schottky | 650V | 10A | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 650V | 300pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 10A DPAK |
4.248 |
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- | Silicon Carbide Schottky | 650V | 10A | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 650V | 300pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 10A TO220F |
8.514 |
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- | Silicon Carbide Schottky | 650V | 10A | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 9A TO220AB |
2.142 |
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- | Standard | 600V | 9A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | TO-220-3 | TO-220AB | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 9A D2PAK |
7.578 |
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- | Standard | 600V | 9A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 9A DPAK |
8.442 |
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- | Standard | 600V | 9A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 9A I2PAK |
3.618 |
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- | Standard | 600V | 9A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 9A TO220F |
8.388 |
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- | Standard | 600V | 9A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F | 175°C (Max) |