WeEn Semiconductors Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerWeEn Semiconductors
Datensätze 134
Seite 3/5
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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WeEn Semiconductors |
DIODE GEN PURP 600V 8A TO220F |
5.094 |
|
- | Standard | 600V | 8A | 2.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 40µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 5A D2PAK |
7.974 |
|
- | Standard | 600V | 5A | 1.9V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 9A TO220AC |
3.400 |
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- | Standard | 600V | 9A | 1.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 9A D2PAK |
8.478 |
|
- | Standard | 600V | 9A | 1.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 4A DO201AD |
6.714 |
|
- | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 50µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 150°C (Max) |
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|
WeEn Semiconductors |
DIODE GEN PURP 600V 4A DO201AD |
6.282 |
|
- | Standard | 600V | 4A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
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|
WeEn Semiconductors |
DIODE GEN PURP 600V 4A DO201AD |
7.218 |
|
- | Standard | 600V | 4A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 4A DO201AD |
2.448 |
|
- | Standard | 600V | 4A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
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|
WeEn Semiconductors |
DIODE GEN PURP 600V 4A DO201AD |
8.028 |
|
- | Standard | 600V | 4A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 4A DO201AD |
6.372 |
|
- | Standard | 600V | 4A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 20A TO220F |
6.156 |
|
- | Standard | 600V | 20A | 2.5V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 3A SOD132 |
5.958 |
|
- | Standard | 600V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | - | - | Surface Mount | DO-214AA, SMB | SMB | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 10A TO220AC |
7.866 |
|
- | Standard | 600V | 10A | 1.8V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 19ns | - | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 10A TO220F |
8.874 |
|
- | Standard | 600V | 10A | 2.9V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 200µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 15A TO220AC |
8.010 |
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- | Standard | 600V | 15A | 3.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 18ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 20A TO220AC |
3.834 |
|
- | Standard | 600V | 20A | 2.9V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 20A TO220F |
2.934 |
|
- | Standard | 600V | 20A | 2.9V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 30A TO247-3 |
6.498 |
|
- | Standard | 600V | 30A | 2.75V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 10µA @ 600V | - | Through Hole | TO-247-3 | TO-247-3 | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 4A DO201AD |
7.704 |
|
- | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1.5V | - | Through Hole | DO-201AD, Axial | DO-201AD | - |
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WeEn Semiconductors |
DIODE GEN PURP 600V 4A DO201AD |
3.006 |
|
- | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | - |
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WeEn Semiconductors |
DIODE GEN PURP 600V 4A DO201AD |
8.190 |
|
- | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | - |
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WeEn Semiconductors |
DIODE GEN PURP 600V 4A DO201AD |
4.572 |
|
- | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | - |
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WeEn Semiconductors |
DIODE GEN PURP 600V 8A D2PAK |
6.498 |
|
- | Standard | 600V | 8A | 3.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 18ns | 20µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 5A TO220AC |
5.724 |
|
- | Standard | 600V | 5A | 3.3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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WeEn Semiconductors |
DIODE GEN PURP 600V 5A TO220F |
3.474 |
|
- | Standard | 600V | 5A | 3.3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | -65°C ~ 175°C |
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WeEn Semiconductors |
DIODE GEN PURP 600V 10A TO220F |
3.600 |
|
- | Standard | 600V | 10A | 2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | -65°C ~ 175°C |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 8A TO220AC |
4.320 |
|
- | Silicon Carbide Schottky | 650V | 8A | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 230µA @ 650V | 260pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 20A TO220AC |
2.088 |
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- | Silicon Carbide Schottky | 650V | 20A | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 500µA @ 650V | 600pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 30A TO220AC |
7.992 |
|
- | Standard | 600V | 30A | 1.8V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 60A TO247-2 |
7.974 |
|
- | Standard | 600V | 60A | 2.6V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | 175°C (Max) |