Vishay Siliconix Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerVishay Siliconix
Datensätze 3.936
Seite 72/132
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 30V 12A 1212-8 |
3.508 |
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SkyFET®, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 12.5mOhm @ 10A, 10V | 2.5V @ 250µA | 45nC @ 10V | ±20V | 1790pF @ 15V | - | 3.8W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 500V 2.5A TO-262 |
5.994 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 17nC @ 10V | ±30V | 340pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 100V 40A PPAK SO-8 |
7.794 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 4.5V, 10V | 14mOhm @ 15A, 10V | 2.8V @ 250µA | 42nC @ 10V | ±20V | 1275pF @ 50V | - | 5W (Ta), 44.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 600V 7A TO-252 |
3.580 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40nC @ 10V | ±30V | 680pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CHANNEL 8SOIC |
8.910 |
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- | P-Channel | MOSFET (Metal Oxide) | - | - | 4.5V, 10V | 5.5mOhm @ 10A, 10V | 1.6V @ 250µA | 114nC @ 10V | - | 4780pF @ 15V | - | - | -55°C ~ 125°C | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 500V 10.5A TO-220FP |
4.536 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 10.5A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 50nC @ 10V | ±30V | 886pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 60V 10A D2PAK |
6.462 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 4V, 5V | 200mOhm @ 6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 7A TO-251 |
6.102 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40nC @ 10V | ±30V | 680pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 60V 17A D2PAK |
7.380 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 4V, 5V | 100mOhm @ 10A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 40V 20.5A 8-SOIC |
3.924 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 20.5A (Tc) | 4.5V, 10V | 7.5mOhm @ 14A, 10V | 3V @ 250µA | 77nC @ 10V | ±20V | 3540pF @ 20V | - | 2.5W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 12A 8-SOIC |
4.770 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 7mOhm @ 16A, 10V | 3V @ 250µA | 25nC @ 4.5V | ±20V | 3230pF @ 15V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 60V 10A D2PAK |
2.466 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 200mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 400V 3.3A TO-262 |
2.088 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 3.3A (Tc) | 10V | 1.8Ohm @ 2A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 410pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 30V 8A 8-SOIC |
5.940 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8A (Ta) | 4.5V, 10V | 12.5mOhm @ 11A, 10V | 2V @ 250µA | 23nC @ 4.5V | ±12V | - | - | 1.31W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 20V 7.2A 8TSSOP |
8.820 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 7.2A (Ta) | 1.8V, 4.5V | 10mOhm @ 8.8A, 4.5V | 800mV @ 400µA | 105nC @ 5V | ±8V | - | - | 1.05W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
MOSFET N-CH 100V 7.2A TO220FP |
2.124 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 7.2A (Tc) | 4V, 5V | 270mOhm @ 4.3A, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 250V 630MA 4-DIP |
8.838 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 630mA (Ta) | 10V | 1.1Ohm @ 380mA, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 30V 35A 1212-8 |
7.596 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 6.6mOhm @ 18.9A, 10V | 1.5V @ 250µA | 31.5nC @ 4.5V | ±12V | 2610pF @ 15V | - | 3.78W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 20V 13.5A 1212-8 |
7.308 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 13.5A (Ta) | 4.5V, 10V | 5.3mOhm @ 21.1A, 10V | 2.5V @ 250µA | 21nC @ 4.5V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 30A 8-SOIC |
2.448 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.5V @ 250µA | 125nC @ 10V | ±20V | 5370pF @ 15V | - | 3W (Ta), 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 30A 8-SOIC |
8.694 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.5V @ 250µA | 125nC @ 10V | ±20V | 5370pF @ 15V | - | 3W (Ta), 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 12V 35A PPAK 1212-8 |
3.564 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 35A (Tc) | 2.5V, 4.5V | 3.7mOhm @ 26.1A, 4.5V | 1.8V @ 250µA | 70nC @ 10V | ±12V | 2800pF @ 6V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 35A PPAK 1212-8 |
2.196 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 6.6mOhm @ 18.9A, 10V | 1.5V @ 250µA | 31.5nC @ 4.5V | ±12V | 2610pF @ 15V | - | 3.78W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 50A PPAK SO-8 |
5.148 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 6V, 10V | 10mOhm @ 12A, 10V | 4.5V @ 250µA | 70nC @ 10V | ±20V | 2850pF @ 30V | - | 5.2W (Ta), 69.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 100V 35A TO252 |
7.776 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 7V, 10V | 26mOhm @ 12A, 10V | 4.4V @ 250µA | 47nC @ 10V | ±20V | 2000pF @ 12V | - | 8.3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 80V 60A POWERPAKSO-8 |
6.642 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 60A (Tc) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | 2.8V @ 250µA | 90nC @ 10V | ±20V | 2900pF @ 40V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 12V 11A 8-SOIC |
2.988 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 11A (Ta) | 2.5V, 4.5V | 5.5mOhm @ 17A, 4.5V | 600mV @ 250µA (Min) | 30nC @ 4.5V | ±8V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 200V D2PAK TO-263 |
2.862 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET P-CH 200V 2A TO220FP |
2.100 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 2A (Tc) | 10V | 3Ohm @ 1.2A, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 180pF @ 25V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 200V 3.3A D2PAK |
6.084 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 3.3A (Tc) | 10V | 1.5Ohm @ 2A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 3W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |