Vishay Siliconix Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerVishay Siliconix
Datensätze 3.936
Seite 74/132
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 30V 9A PPAK SO-8 |
5.634 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 9.5mOhm @ 15A, 10V | 3V @ 250µA | 15nC @ 4.5V | ±20V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 9A PPAK SO-8 |
7.596 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 9.5mOhm @ 15A, 10V | 3V @ 250µA | 15nC @ 4.5V | ±20V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 40V 33A 8-SOIC |
6.336 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 33A (Tc) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 2.8V @ 250µA | 122nC @ 10V | ±20V | 5670pF @ 20V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CHANNEL 40V 50A TO263 |
7.290 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.5V @ 250µA | 130nC @ 10V | ±20V | 6100pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 100V 6.8A D2PAK |
5.346 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 600mOhm @ 4.1A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 11A D2PAK |
2.052 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 11A (Tc) | 10V | 280mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 570pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 11A D2PAK |
3.418 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 11A (Tc) | 10V | 280mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 570pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 12V 10A 8-SOIC |
5.436 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 10A (Ta) | 1.8V, 4.5V | 8.25mOhm @ 14A, 4.5V | 800mV @ 850µA | 120nC @ 4.5V | ±8V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 200V 3.5A D2PAK |
5.184 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 3.5A (Tc) | 10V | 1.5Ohm @ 1.5A, 10V | 4V @ 250µA | 22nC @ 10V | ±20V | 350pF @ 25V | - | 3W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8 |
2.952 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 3.1mOhm @ 15A, 10V | 2.5V @ 250µA | 125nC @ 10V | ±20V | 5370pF @ 15V | - | 5.2W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 220V 8.4A 1212-8 |
8.172 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 220V | 8.4A (Tc) | 4.5V, 10V | 320mOhm @ 2.3A, 10V | 4V @ 250µA | 21nC @ 10V | ±20V | 645pF @ 15V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 250V 450MA 4-DIP |
5.166 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 450mA (Ta) | 10V | 2Ohm @ 270mA, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET P-CH 50V 1.1A 4-DIP |
5.634 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 1.1A (Tc) | 10V | 500mOhm @ 580mA, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 240pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 60V 7.7A I-PAK |
3.636 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 4V, 5V | 200mOhm @ 4.6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 30V 11A 8-SOIC |
3.222 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | - | 4.5V, 10V | 12mOhm @ 11A, 10V | 800mV @ 250µA (Min) | 20nC @ 5V | ±25V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 80V 28A PPAK SO-8 |
8.550 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 80V | 28A (Tc) | 6V, 10V | 25mOhm @ 10.5A, 10V | 4V @ 250µA | 155nC @ 10V | ±20V | 5160pF @ 40V | - | 5.2W (Ta), 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 80V 28A PPAK SO-8 |
5.040 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 80V | 28A (Tc) | 6V, 10V | 25mOhm @ 10.5A, 10V | 4V @ 250µA | 155nC @ 10V | ±20V | 5160pF @ 40V | - | 5.2W (Ta), 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 800V D2PAK TO-263 |
6.192 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET P-CH 30V 45A DPAK |
4.284 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 45A (Tc) | 4.5V, 10V | 8.7mOhm @ 20A, 10V | 2.5V @ 250µA | 90nC @ 10V | ±20V | 2700pF @ 15V | - | 2.1W (Ta), 41.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 9A PPAK SO-8 |
2.790 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 8.25mOhm @ 15A, 10V | 1.8V @ 250µA | 19nC @ 4.5V | ±12V | 1900pF @ 15V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 200V 19A TO252 |
7.362 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 19A (Tc) | 6V, 10V | 90mOhm @ 5A, 10V | 4V @ 250µA | 51nC @ 10V | ±20V | 1800pF @ 25V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
5.238 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 4V, 5V | 200mOhm @ 4.6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
2.142 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 4V, 5V | 200mOhm @ 4.6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A D2PAK |
7.128 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 700pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
5.904 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 4V, 5V | 540mOhm @ 2.6A, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
3.598 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 4V, 5V | 540mOhm @ 2.6A, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
4.248 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 4V, 5V | 540mOhm @ 2.6A, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A I-PAK |
2.916 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 4V, 5V | 540mOhm @ 2.6A, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 60V 30A TO220FP |
5.130 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 28mOhm @ 18A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 2500pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 40V 100A TO-263 |
4.068 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 2.7mOhm @ 30A, 10V | 3.5V @ 250µA | 145nC @ 10V | ±20V | 7910pF @ 25V | - | 157W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |