Vishay Siliconix Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerVishay Siliconix
Datensätze 3.936
Seite 132/132
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 650V TO263 |
4.878 |
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S | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 190mOhm @ 11A, 10V | 4V @ 250µA | 110nC @ 10V | ±30V | 2.81nF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 20V SC-70-6 |
2.556 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 12A (Ta), 12A (Tc) | 4.5V, 10V | 13.5mOhm @ 7A, 10V | 3V @ 250µA | 18nC @ 10V | ±20V | 800pF @ 10V | - | 3.5W (Ta), 19.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Vishay Siliconix |
MOSFET N-CH 30V SMD |
6.552 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 12A (Tc) | 4.5V, 10V | 17mOhm @ 7.4A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 560pF @ 15V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Vishay Siliconix |
MOSFET N-CH 30V SMD |
6.894 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 12A (Tc) | 4.5V, 10V | 18mOhm @ 9A, 10V | 2.4V @ 250µA | 17nC @ 10V | ±20V | 570pF @ 15V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Vishay Siliconix |
MOSFET N-CH |
3.726 |
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Vishay Siliconix |
MOSFET N-CH 500V TO PKG |
3.544 |
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